PROCESS CP761R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94 MILS Source Bonding Pad Area 3.94 x 7.08 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 123,000 PRINCIPAL DEVICE TYPES CEDM8001 CMNDM8001 R1 (2-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP761R Typical Electrical Characteristics R1 (2-September 2010) w w w. c e n t r a l s e m i . c o m