CENTRAL CPD73

Central
PROCESS
TM
Semiconductor Corp.
CPD73
Bridge Rectifier
Monolithic Quad Diode Bridge Chip
PROCESS DETAILS
Die Size
25 x 25 MILS
Die Thickness
6.0 MILS
Bonding Pad Area 1 (+DC)
3.0 x 3.0 MILS
Bonding Pad Area 2 (AC)
3.0 x 7.0 MILS
Bonding Pad Area 3 (-DC)
3.0 x 4.0 MILS
Bonding Pad Area 4 (AC)
3.0 x 7.0 MILS
Top Side Metalization
Al - 12,000Å
Back Side Metalization
Au - 5,000Å
GEOMETRY
GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (1-November 2004)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD73
Typical Electrical Characteristics
R0 (1-November 2004)