PROCESS Central CP273 Power Transistor TM Semiconductor Corp. NPN- Silicon Power Transistor Chip PROCESS DETAILS Die Size 68 x 68 MILS Die Thickness 8.5 MILS ± 0.6 MILS Base Bonding Pad Area 17.7 x 10.2 MILS Emitter Bonding Pad Area 18.1 x 8.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ag - 14,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 2,440 PRINCIPAL DEVICE TYPES MJE13003 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP273 Typical Electrical Characteristics R1 (28 -March 2005)