CPH6530 Ordering number : EN8709 PNP / NPN Epitaxial Planar Silicon Transistor CPH6530 Low-Frequency General-Purpose Applications Applications • Muting circuit, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--15)60 V Collector-to-Emitter Voltage VCEO (--12)50 V Emitter-to-Base Voltage VEBO (--)5 V (--1)0.5 A Collector Current IC Collector Current (Pulse) ICP PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg (--2)1 A 0.6 W 150 °C --55 to +150 °C Mounted on a ceramic board (600mm2✕0.8m) 1unit Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) Conditions VCB=(--12)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)10mA Ratings min typ 300 max (--)100 nA (--)100 nA (700)800 VCE=(--2)10V, IC=(--)50mA VCB=(--)10V, f=1MHz (450)500 IC=(--400)100mA, IB=(--20)10mA IC=(--400)100mA, IB=(--20)10mA (--120)50 (--240)100 Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A Unit MHz (6)2.8 (--)0.9 pF (--)1.2 mV V (--15)60 V (--12)50 V (--)5 V Marking : EQ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805EA MS IM TB-00001960 No.8709-1/5 CPH6530 Package Dimensions unit : mm 7018-006 Electrical Connection 0.4 5 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 0.2 0.05 2.8 1.6 2 4 0.15 0.6 1 5 4 0.6 6 6 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 0.95 0.7 0.9 0.2 2.9 SANYO : CPH6 IC -- VCE A [NPN] 450 --5mA --700 --600 --3mA --500 --2mA --400 --300 --1mA --200 --0.5mA --100 7mA A 1 5m --7mA 400 350 8mA 0mA 20m --800 IC -- VCE 500 300 3mA 2mA 250 1mA 200 600µA 150 200µA 100 50 0 0 IB=0mA 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IC -- VBE --1200 IB=0A 100 200 300 400 500 600 700 900 800 Collector-to-Emitter Voltage, VCE -- mV IT05094 [PNP] IC -- VBE 600 1000 IT05106 [NPN] VCE= --2V VCE=2V --1000 --600 --400 --200 --25° C --800 400 300 Ta=7 5°C 25°C --25°C Collector Current, IC -- mA 500 Ta= 75°C 2 5°C Collector Current, IC -- mA 5mA 1 30mA mA --30 mA A 10 5m -- --1 --20 Collector Current, IC -- mA --900 [PNP] mA Collector Current, IC -- mA --1000 200 100 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05095 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05107 No.8709-2/5 CPH6530 hFE -- IC 1000 7 --25°C 3 2 VCE=2V 25°C --25°C 5 25°C [NPN] Ta=75°C 7 Ta=75°C 5 hFE -- IC 1000 3 DC Current Gain, hFE DC Current Gain, hFE [PNP] VCE= --2V 2 100 7 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC [PNP] --10 7 5 3 2 5 7 100 2 3 VCE(sat) -- IC 3 5 7 1000 IT05108 [NPN] IC / IB=10 2 100 7 5 3 25 °C 2 10 7 2 3 5 7 --100 2 3 VCE(sat) -- IC 5 1.0 5 7--1000 IT05097 [PNP] 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 °C 75 = Ta 5°C --2 5 °C 25 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 3 2 25°C --1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05099 3 5 7 100 2 3 5 7 1000 IT05411 [NPN] 2 100 7 5 25 °C 3 2 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05109 VCE(sat) -- IC 1000 [NPN] IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 2 VCE(sat) -- IC 10 1.0 5 7--1000 [PNP] IC / IB=20 7 5 7 10 IC / IB=20 IT05098 VBE(sat) -- IC --10 3 Collector Current, IC -- mA IC / IB=50 7 2 5° C 5 7 --10 --2 3 75 °C 2 --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 Ta =7 5° C °C °C 75 Ta= 5°C --2 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 5° C 25 3 2 --0.1 --1.0 5 7 10 --2 --100 7 5 --10 --1.0 3 IC / IB=20 3 2 --1.0 --1.0 2 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 10 1.0 5 7--1000 IT05096 Ta = 100 --1.0 5 3 2 °C 75 100 7 25 5 °C = Ta C 5° --2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05110 No.8709-3/5 CPH6530 Cob -- VCB 3 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Output Capacitance, Cob -- pF 10 7 5 3 2 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 25°C 1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 Cob -- VCB [PNP] 10 [NPN] f=1MHz Output Capacitance, Cob -- pF 3 2 100 7 5 3 5 7 1000 IT05111 Collector Current, IC -- mA 7 5 3 2 2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 3 s 7 5 s ms 0µ 10 10 0m DC s ati 2 s 3 1m op er on --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 2 --0.01 --0.1 2 0.6 3 5 7 --1.0 2 3 5 7 --10 2 3 5 [NPN] 3 2 on ac er am ic ar 0.3 d (6 00 m 0.2 m2 ✕ 0. 8m )1 un 0 60 80 100 120 Ambient Temperature, Ta -- °C 3 5 7 100 2 3 5 7 1000 7 5 IT05113 ASO 2 [NPN] ICP=1.0A IC=0.5A 10 m 3 C s 10 D 2 0m op s er at 0.1 io n 7 5 2 it 40 2 3 m 0.1 5 7 10 s bo 3 1m 0.4 2 Collector Current, IC -- mA Collector Current, IC -- A nt ed 100 s 0µ 10 s 0µ 50 ou 7 IT05112 5 1.0 0.5 20 2 10 7 100 1.0 3 M 0 7 fT -- IC 1000 Collector-to-Emitter Voltage, VCE -- V IT10001 [PNP/NPN] PC -- Ta 0.7 5 VCE=10V 0µ IC= --1A 3 3 Collector-to-Base Voltage, VCB -- V [PNP] 50 --1.0 ASO ICP= --2A 2 10 2 1.0 1.0 5 7--1000 IT05101 Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz 2 0.1 1.0 3 5 10 --1.0 Collector Current, IC -- A 3 VCE= --2V 7 Collector Dissipation, PC -- W 5 IT05100 fT -- IC 1000 [NPN] IC / IB=20 7 2 1.0 --1.0 VBE(sat) -- IC [PNP] f=1MHz 140 160 IT10000 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT10002 No.8709-4/5 CPH6530 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No.8709-5/5