Ordering number:ENN6387 PNP/NPN Epitaxial Planar Silicon Transistors MCH6101/MCH6201 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers. unit:mm 2170 Features 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). · High allowable power dissipation. 0.25 [MCH6101/MCH6201] 2.0 0.85 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : MCPH6 0.15 Specifications ( ) : MCH6101 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO VEBO (–)15 V (–)5 V IC (–)1.5 A Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP (–)3 Base Current (–)300 Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (600mm2×0.8mm) A mA 1.0 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)12V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO (–)0.1 µA DC Current Gain hFE VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA Gain-Bandwidth Product fT Cob VCE=(–)2V, IC=(–)300mA VCB=(–)10V, f=1MHz Output Capacitance 200 560 430 (15)8 Marking : MCH6101 : AA, MCH6201 : CA MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70500TS (KOTO) TA-2787 No.6387–1/5 MCH6101/MCH6201 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions min IC=(–)750mA, IB=(–)15mA VBE(sat) IC=(–)750mA, IB=(–)15mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time tstg See specified test circuit. tf See specified test circuit. Fall Time IE=(–)10µA, IC=0 Unit typ max (–110) (–180) mV 120 200 mV (–)0.85 (–)1.2 V (–)15 V (–)15 V (–)5 V See specified test circuit. 30 ns (90) ns 160 ns (12)15 ns Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT (For PNP, the polarity is reversed.) IB2 OUTPUT RB VR RL + + 50Ω 220µF 470µF VBE=–5V VCC=5V 20IB1= –20IB2= IC=750mA A --10mA --1.0 --8mA --6mA --0.8 --4mA --0.6 --0.4 mA 10mA 1.4 8mA 1.2 6mA 1.0 4mA 0.8 0.6 2mA --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Collector-to-Emitter Voltage, VCE – V IB=0 0 --1.0 0 0.2 0.3 IC -- VBE Collector Current, IC – A Ta=7 5 °C --0.6 25°C --25°C --0.8 --0.2 0.7 0.8 0.9 1.0 IT00883 1.2 1.0 0.8 0.6 0.4 0.2 0 0.6 MCH6201 VCE=2V 1.4 --1.0 0.5 IC -- VBE 1.6 --1.2 0.4 Collector-to-Emitter Voltage, VCE – V IT00882 MCH6101 VCE=--2V --0.4 0.1 --25°C --0.2 °C 25°C --0.1 Ta=7 5 0 Collector Current, IC – A 1.6 0.2 IB=0 0 --1.4 15mA 0.4 --2mA --0.2 --1.6 A 20m 30 A --15mA --1.4 --1.2 1.8 40m A --40m --1.6 --20mA MCH6201 A A 0m --3 --50 m Collector Current, IC – A --1.8 IC -- VCE 2.0 Collector Current, IC – A MCH6101 50m IC -- VCE --2.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Base-to-Emitter Voltage, VBE – V --0.9 --1.0 IT00884 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Base-to-Emitter Voltage, VBE – V 0.9 1.0 IT00885 No.6387–2/5 MCH6101/MCH6201 hFE -- IC 1000 7 DC Current Gain, hFE DC Current Gain, hFE 5 Ta=75°C 25°C 3 --25°C 2 100 5 2 3 5 7 --0.1 3 5 7 --1.0 2 3 0.01 f T -- IC 7 3 2 100 7 5 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 7 2 0.1 3 5 7 3 IT00887 f T -- IC MCH6201 VCE=2V 3 2 100 7 5 2 3 5 7 2 0.1 3 5 7 1.0 Collector Current, IC – A IT00888 2 3 IT00889 Cob -- VCB 100 MCH6101 f=1MHz 2 1.0 5 3 0.01 3 Cob -- VCB 7 MCH6201 f=1MHz 7 5 Output Capacitance, Cob – pF 5 Output Capacitance, Cob – pF 5 Collector Current, IC – A 7 5 3 3 1000 MCH6101 VCE=--2V 2 2 IT00886 Gain-Bandwidth Product, f T – MHz Gain-Bandwidth Product, f T – MHz 2 Collector Current, IC – A 100 3 2 10 7 5 3 2 3 2 10 7 5 3 2 1.0 1.0 2 --1.0 3 5 7 2 --10 Collector-to-Base Voltage, VCB – V 3 3 2 --100 7 5°C 5 25°C 7 Ta= 3 5 °C 2 --2 --10 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 5 7 3 IT00892 2 10 3 IT00891 VCE(sat) -- IC MCH6201 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 3 Collector-to-Base Voltage, VCB – V 1000 MCH6101 IC / IB=20 7 2 1.0 IT00890 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV --25°C 2 7 1000 7 --0.01 Ta=75°C 25°C 3 100 7 3 --0.01 MCH6201 VCE=2V 7 5 5 --0.01 hFE -- IC 1000 MCH6101 VCE=--2V 5 3 2 100 7 °C 75 25°C = Ta 5 3 °C --25 2 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 IT00893 No.6387–3/5 MCH6101/MCH6201 VCE(sat) -- IC --1000 5 3 2 --100 25°C °C 75 Ta= 5 3 --25° C 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 3 2 Ta= --25°C 75°C 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 100 5 °C 7 7 Ta= 5 7 --1.0 Collector Current, IC – A 2 ° --25 C 3 2 2 3 5 7 1.0 7 5 3 3 2 Ta=25°C Single pulse Mounted on a ceramic ×0.8mm) For PNP, minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 IT00895 3 2 Ta= --25°C 1.0 7 75°C 5 25°C 3 2 2 3 5 7 2 0.1 3 5 7 2 1.0 3 IT00897 PC -- Ta MCH6101 / MCH6201 1.2 1.0 M ou nte do 0.8 na ce ram ic 0.6 bo ard (6 00 0.4 mm 2 ×0 .8m 0.2 board(600mm2 2 1.0 5 1.4 2 0.1 7 5 7 Collector Current, IC – A Collector Dissipation, PC – W IC=1.5A 2 5 MCH6201 IC / IB=50 IT00896 s 0µ 50 Collector Current, IC – A 3 3 VBE(sat) -- IC 0.1 0.01 3 MCH6101 / MCH6201 1ms 10 0µ 10 s 10 m 0m s s DC op era tio n ICP=3A 2 0.1 Collector Current, IC – A ASO 10 7 5 25°C 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 5 2 10 7 7 3 IT00894 MCH6101 IC / IB=50 --1.0 5 10 0.01 3 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 2 MCH6201 IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 7 VCE(sat) -- IC 1000 MCH6101 IC / IB=50 m) 0 3 5 7 10 Collector-to-Emitter Voltage, VCE – V 2 3 IT00898 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00899 No.6387–4/5 MCH6101/MCH6201 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6387–5/5