Ordering number : ENN6590 CPH5506 PNP/NPN Epitaxial Planar Silicon Transistors CPH5506 DC / DC Converter Applications Applications Package Dimensions Relay drivers, Lamp drivers, Motor drivers. unit : mm 2186 Features 0.2 0.15 3 0.6 4 1 0.05 2 0.95 0.4 0.9 0.7 0.2 • 2.9 5 1.6 • [CPH5506] Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. The CPH5506 consists of two chips encapsulated in a package which are equivalent to the CPH3115 and the CPH3215, respectively. Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) 0.6 • 2.8 • 0.4 1 : Collector(NPN TR) 2 : Collector(PNP TR) 3 : Base(PNP TR) 4 : Common Emitter 5 : Base(NPN TR) SANYO : CPH5 Specifications ( ):PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)5 V (--)1.5 A Collector Current Base Current IC ICP IB Collector Dissipation PC Total Dissipation PT Junction Temperature Tj Storage Temperature Tstg Collector Current (Pulse) (--)5 V A (--)300 mA Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W Mounted on a ceramic board (600mm2✕0.8mm) 1.2 W 150 °C --55 to +150 °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71400 TS IM TA-2880 No.6590-1/5 CPH5506 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain Bandwidth Product VCE=(--)2V, IC=(--)100mA Collector-to-Emitter Breakdown Voltage VBE(sat) V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Collector-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time µA µA 560 MHz pF (--250)150 (--375)225 (--)0.85 IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ mV (--)1.2 V (--30)40 V (--)30 V IE=(--)10µA, IC=0 See specified Test Circuit tf (--)0.1 (--)0.1 (9)8 IC=(--)750mA, IB=(--)15mA IC=(--)750mA, IB=(--)15mA ton tstg Unit max (450)500 VCB=(--)10V, f=1MHz VCE(sat) Base-to-Emitter Saturation Voltage typ 200 VCE=(--)10V, IC=(--)300mA Cob Collector-to-Emitter Saturation Voltage min VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 fT Output Capacitance Rathings Conditions (--)5 V 35 ns See specified Test Circuit (115)205 ns See specified Test Circuit 30 ns Marking : EF Switching Time Test Circuit Electrical Connection IB1 B1 IB2 RB 50Ω RL 16Ω + + 100µF VBE= --5V 470µF IC -- VCE [PNP] --50mA --40mA --30mA --1.6 --1.4 --20mA --1.2 --8mA --10mA --6mA --4mA --0.8 --0.6 --2mA --0.4 [NPN] A 1.8 --0.2 20mA 30m 40mA 1.6 1.4 1.2 10mA 8mA 6mA 1.0 4mA 0.8 2mA 0.6 0.4 0.2 IB=0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --1.6 IB=0 0 0 --0.9 --1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V IT01673 [PNP] IC -- VBE 1.6 VCE= --2V 1.0 IT01674 [NPN] VCE=2V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 1.2 1.0 0.8 0.6 C 25°C --25°C Collector Current, IC -- A 1.4 Ta=7 5°C 25°C --25°C Collector Current, IC -- A IC -- VCE 2.0 Ta=75 ° Collector Current, IC -- A --1.8 --1.0 C2 For PNP, the polarity is reversed. VCC=12V --2.0 C1 20IB1= --20IB2=IC=750mA A VR B2 50m INPUT EC OUTPUT Collector Current, IC -- A PW=20µs D.C.≤1% 0.4 0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT01675 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT01676 No.6590-2/5 CPH5506 hFE -- IC 1000 [PNP] 7 Ta=75°C 3 2 25°C --25°C 100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 25°C --25°C 2 100 7 5 10 0.01 3 2 3 5 7 3 7 5 3 2 100 7 5 5 7 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A [NPN] VCE=10V 1000 7 5 3 2 100 7 5 2 0.01 7 --1.0 2 IT01679 Cob -- VCB 100 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A [PNP] [NPN] 7 7 5 5 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF f=1MHz 3 2 10 7 5 3 3 2 10 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 2 0.1 5 Collector-to-Base Voltage, VCB -- V IT01681 VCE(sat) -- IC [PNP] --1.0 2 --0.1 7 5 Ta 2 2 3 °C --25 5 7 --0.1 25 °C 2 3 5 Collector Current, IC -- A 7 --1.0 2 5 7 1.0 2 3 5 7 10 3 IT01683 2 VCE(sat) -- IC 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 3 3 3 5 IT01682 [NPN] IC / IB=20 7 5 °C =75 2 Collector-to-Base Voltage, VCB -- V IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 1.0 IT01680 Cob -- VCB 100 f=1MHz --0.01 --0.01 3 3 3 2 --0.1 2 1.0 IT01678 2 Gain Bandwidth Product, f T -- MHz 1000 3 f T -- IC [PNP] VCE= --10V 2 2 0.1 Collector Current, IC -- A IT01677 f T -- IC 3 Gain Bandwidth Product, f T -- MHz Ta=75°C 2 Collector Current, IC -- A 2 --0.01 5 3 2 10 --0.01 [NPN] VCE=2V 7 DC Current Gain, hFE DC Current Gain, hFE 5 hFE -- IC 1000 VCE= --2V 5 3 2 0.1 7 5 3 C 75° Ta= °C --25 2 0.01 0.01 2 3 5 7 0.1 °C 25 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT01684 No.6590-3/5 CPH5506 VCE(sat) -- IC 5 3 2 --0.1 75°C 5 5°C 2 ° Ta= --25 C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 Ta= --25°C 7 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) For PNP, minus sign is omitted 3 5 7 2 0.1 3 5 7 2 1.0 3 IT01686 VBE(sat) -- IC [NPN] IC / IB=50 5 3 2 1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 2 0.1 3 5 7 PC -- Ta 2 1.0 3 IT01688 [PNP / NPN] 3 5 7 1.0 2 3 5 7 10 2 1.0 0.9 To t 0.8 al 1u nit 0.6 Di ss ip ati on 0.4 0.2 0 3 5 7 100 IT02363 Collector-to-Emitter Voltage, VCE -- V PC(TR2) -- PC(TR1) [PNP / NPN] 1.0 2 °C Collector Current, IC -- A Collector Dissipation, PC -- W ms s 3 1 op 00m er s ati on 0µ 10 DC 2 25 1.2 s 50 IC=1.5A 1.0 7 5 0.1 2 0.1 0.01 3 0µ Collector Current, IC -- A 2 10 s 0.01 5°C 2 Ta= -- 10µs 3 3 2 C 1.4 1m 0.1 7 5 75° 3 [PNP / NPN] ICP=5A 2 5 IT01687 ASO 10 7 5 7 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 --0.1 --0.01 0.1 7 5 75°C 2 Collector Current, IC -- A [PNP] 7 5 3 0.01 0.01 3 IC / IB=50 --1.0 5 IT01685 VBE(sat) -- IC --10 2 [NPN] IC / IB=50 7 7 --0.01 --0.01 Collector Dissipation, PC(TR2) -- W 1.0 --1.0 7 VCE(sat) -- IC [PNP] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Mounted on a ceramic board(600mm2✕0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02364 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Mounted on a ceramic board(600mm2✕0.8mm) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02365 No.6590-4/5 CPH5506 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6590-5/5