Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 (Previous: REJ03G0348-0400) Rev.5.00 Sep 15, 2010 Thyristor Low Power Use Features Non-Insulated Type Planar Passivation Type Surface Mounted type IT (AV) : 0.5 A VDRM : 400 V IGT : 100 A Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 RENESAS Package code: de: PLZ LZZ0004CB-A (Package name: SOTOT-89)) OT-89 3 L O E G K P 4 4 2, 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Note1 DC off-state voltage Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing VRRM VRSM VR (DC) VDRM VD (DC) Symbol IT (RMS) IT (AV) Ratings 0.79 0.5 Unit A A ITSM 10 A I2t 0.4 A2s Peak gate power dissipation PGM 0.1 Average gate power dissipation PG (AV) 0.01 Peak gate forward voltage VFGM 6 Peak gate reverse voltage VRGM 6 Peak gate forward current IFGM 0.1 Junction temperature Tj – 40 to +125 Storage temperature Tstg – 40 to +125 Mass — 50 Notes: 1. With gate to cathode resistance RGK = 1 k. R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 Voltage class 8 (Mark CD) 400 500 320 400 320 Symbol W W V V A °C °C mg Unit V V V V V Conditions Commercial frequency, sine half wave 180° conduction, Ta = 57°CNote2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 8 CR05AS-8 Preliminary Electrical Characteristics Parameter Symbol Rated value Typ. Max. — 0.1 — 0.1 Unit Test conditions Repetitive peak reverse current Repetitive peak off-state current IRRM IDRM Min. — — On-state voltage VTM — — 1.9 V Ta = 25°C, ITM = 1.5 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 20 — 100Note3 A Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Holding current IH — — 3 mA Rth (j-a) — — 70 °C/W Tj = 25°C, VD = 12 V, RGK = 1 k Junction to ambientNote2 Thermal resistance mA mA Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 k Notes: 2. Soldering with ceramic plate (25 mm 25 mm t0.7 mm). 3. If special values of IGT are required, choose item E from those listed in the table below if possible. Item B E IGT (A) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 4. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 Page 2 of 8 CR05AS-8 Preliminary Performance Curves 102 7 Ta = 25°C 5 3 2 Surge On-State Current (A) 10 101 7 5 3 2 100 7 5 3 2 1 2 3 4 5 Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 5 4 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature VFGM = 6V PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V IGT = 100μA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 0.9 Gate Trigger Voltage (V) 6 Gate Characteristics 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0.8 7 Conduction Time (Cycles at 60Hz) 102 7 5 3 2 8 On-State Voltage (V) × 100 (%) 0 9 0 100 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10–1 Rated Surge On-State Current Distribution 0.7 Typical Example 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25×25×t0.7 5 Aluminum Board 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) Page 3 of 8 CR05AS-8 Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 60° 90° 120° 180° 1.0 0.5 θ 360° Resistive, inductive loads 0 0 Ambient Temperature (°C) Average Power Dissipation (W) 1.5 25×25×t0.7 140 Aluminum Board 120 Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 90° 60° 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ 360° 0 180° 120° 0.2 0.8 0.6 0.4 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 0.5 θ θ 360° Ambient Temperature (°C) 180° 1.0 25×25×t0.7 140 Aluminum Board θ θ 360° 120 Resistive loads Natural convection 100 80 60 40 60° θ = 30° 20 120° 90° 180° Resistive loads 0 Average Power Dissipation (W) 90° θ = 30° 60° 120° 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.8 0.6 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 90° 180° θ = 30° 60° 120° 270° 1.5 DC 1.0 0.5 θ 360° 0 0 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 160 Ambient Temperature (°C) Average Power Dissipation (W) 160 1.5 25×25×t0.7 140 Aluminum Board θ 120 360° Resistive, inductive loads Natural convection 100 80 60 DC 40 θ = 30° 60° 20 0 120° 90° 0 0.2 0.4 270° 180° 0.6 0.8 Average On-State Current (A) Page 4 of 8 Preliminary Typical Example 140 120 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example Tj = 125°C 100 80 60 40 20 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature 100 80 60 #2 40 #1 Typical Example 20 # 1 IGT(25°C = 10μA) # 2 IGT(25°C = 66μA) Tj = 125°C, RGK = 1kΩ 0 0 10 2 3 5 7101 2 3 5 7 102 2 3 5 7 10 3 Holding Current (mA) 120 102 7 5 3 2 101 7 5 3 2 Tj = 25°C IH (25°C) = 1mA IGT(25°C) = 25μA Distribution Typical Example 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 Typical Example IGT(25°C) IH(1kΩ) 13μA 1.6mA #1 59μA 1.8mA #2 400 #1 300 #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 Gate to Cathode Resistance (kΩ) R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 × 100 (%) Rate of Rise of Off-State Voltage (V/μs) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR05AS-8 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 8 CR05AS-8 Preliminary Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 #1 #2 Typical Example IGT(25°C) #1 10μA #2 66μA 102 7 5 4 3 2 Tj = 25°C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (μs) R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 Page 6 of 8 CR05AS-8 Preliminary Package Dimensions Previous Code UPAK / UPAKV RENESAS Code PLZZ0004CA-A 4.5 ± 0.1 1.5 1.5 3.0 Package Name SOT-89 JEITA Package Code SC-62 0.4 RENESAS Code PLZZ0004CB-A 0.44 Max Previous Code ⎯ (0.2) 0.53 Max 0.48 Max (1.5) 2.5 ± 0.1 4.25 Max φ1 Unit: mm 1.5 ± 0.1 0.44 Max 0.8 Min 1.8 Max MASS[Typ.] 0.050g (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK MASS[Typ.] 0.48g Unit: mm G K P L O E 4.6Max 1.5 ± 0.1 4.2Ma Max 0.8Min n 2.5 5 ± 0.1 1.6 ± 0.2 0.58Max 1.5 3.0 R07DS0135EJ0500 Rev.5.00 Sep 15, 2010 +0.03 0.4 –0.05 0.48Max Page 7 of 8 CR05AS-8 Preliminary Order Code Lead form Surface-mounted type Standard packing Taping Quantity 4000 Standard order code Type name – ET +Direction (1 or 2) + 4 Standard order code example CR05AS-8-ET14 Note : Please confirm the specification about the shipping in detail. 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