Preliminary Datasheet CR12CS-16B Thyristor R07DS0414EJ0100 Rev.1.00 May 18, 2011 Medium Power Use Features • IT (AV) : 12 A • VDRM : 800 V • IGT: 30 mA • Non-Insulated Type • Planar Type Outline RENESAS Package code : PRSS0004AE-B (Package name: LDPAK (S)-(1) ) : PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 2, 4 3 1 2 1 3 1 2 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0414EJ0100 Rev.1.00 May 18, 2011 Symbol Voltage class 16 Unit VRRM VRSM VR(DC) VDRM VD(DC) 800 960 640 800 640 V V V V V Page 1 of 8 CR12CS-16B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT(AV) Ratings 18.8 12 Unit A A ITSM 360 A I2 t 544 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 1.3 1.4 W W V V A °C °C g g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 116°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current LDPAK(S)-(1) , Typical value LDPAK(L) , Typical value Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM Repetitive peak off-state current IDRM VTM — — — — — 2.0 5.0 2.0 5.0 1.6 mA mA mA mA V Tj = 125°C, VRRM applied, Tj = 150°C, VRRM applied, Tj = 125°C, VDRM applied, Tj = 150°C, VDRM applied, On-state voltage — — — — — Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.2 0.1 — — — — — — — 1.5 — — 30 1.2 V V V mA °C/W Gate trigger current Thermal resistance IGT Rth (j-c) Tc = 25°C, ITM = 40 A, Instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A, Tj = 125°C, VD = 1/2 VDRM, Tj = 150°C, VD = 1/2 VDRM, Tj = 25°C, VD = 6 V, IT = 1 A, Junction to caseNote1 Notes: 1. Case temperature is measured on the anode tab R07DS0414EJ0100 Rev.1.00 May 18, 2011 Page 2 of 8 CR12CS-16B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 400 Surge On-State Current (A) 102 101 1.2 1.6 2.0 2.4 2.8 Gate Voltage (V) 101 102 × 100 (%) Gate Trigger Current vs. Junction Temperature PGM = 5 W VFGM = 6 V PG(AV) = 0.5 W IFGM =2A IGT = 30 mA VGD = 0.1 V 10–2 101 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 80 Gate Characteristics 10–1 102 103 104 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 100 –40 160 Conduction Time (Cycles at 60Hz) VGT = 1.5 V 100 240 On-State Voltage (V) 102 101 320 0 100 3.2 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 0.8 0 40 80 120 Junction Temperature (°C) R07DS0414EJ0100 Rev.1.00 May 18, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 25°C 101 100 10-1 10-2 10-4 10-3 10-2 10-1 Time (s) Page 3 of 8 CR12CS-16B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 56 θ 48 360° 120° 90° Resistive, 40 inductive loads Case Temperature (°C) Average Power Dissipation (W) 64 180° 60° 32 24 θ = 30° 16 0 4 8 12 16 20 24 28 60 60° 120° 40 θ = 30° 0 3 90° 180° 6 9 12 15 18 21 24 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) 64 Resistive, inductive loads Natural convection 120 Average Power Dissipation (W) Ambient Temperature (°C) 80 Average On-State Current (A) θ 360° 100 80 120° θ = 30° 180° 60° 60 90° 40 20 0 56 120° 180° 48 90° 40 60° 32 θ = 30° 24 16 θ θ 360° 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Resistive loads 0 4 8 12 16 20 24 28 32 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 θ 120 θ 360° Resistive loads 100 80 60 60° 120° 40 θ = 30° 20 0 4 8 90° 180° 12 16 20 24 28 Average On-State Current (A) R07DS0414EJ0100 Rev.1.00 May 18, 2011 32 Ambient Temperature (°C) 160 Case Temperature (°C) Resistive, inductive loads 100 Average On-State Current (A) 140 0 360° 0 32 160 0 θ 120 20 6 0 140 Resistive loads Natural convection 140 120 θ θ 360° 100 180° 120° 80 θ = 30° 60 60° 90° 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Page 4 of 8 CR12CS-16B Preliminary Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) Maximum Average Power Dissipation (Rectangular Wave) 160 56 140 48 Case Temperature (°C) θ 360° 40 Resistive, inductive loads 180° 270° 32 120° 90° DC 60° 24 θ = 30° 16 8 0 4 8 12 20 16 24 28 80 θ = 30° 90° 180° 60 DC 60° 120° 270° 40 0 4 8 12 16 20 24 28 Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Breakover Voltage vs. Junction Temperature × 100 (%) Average On-State Current (A) Resistive, inductive loads Natural convection 140 θ 360° 120 100 DC 270° 80 θ = 30° 60 180° 60° 90° 40 120° 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Ambient Temperature (°C) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) Resistive, inductive loads Average On-State Current (A) 160 0 360° 100 0 32 103 32 Typical Example 102 101 –40 0 40 80 120 160 Average On-State Current (A) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0414EJ0100 Rev.1.00 May 18, 2011 × 100 (%) 0 θ 120 20 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) Average Power Dissipation (W) 64 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Page 5 of 8 Preliminary Holding Current vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 × 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Holding Current (Tj = t°C) Holding Current (Tj = 25°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR12CS-16B 103 Typical Example 102 101 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 10−1 100 101 102 Gate Current Pulse Width (μs) R07DS0414EJ0100 Rev.1.00 May 18, 2011 Page 6 of 8 CR12CS-16B Preliminary Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm (1.4) 4.44 ± 0.2 (1.5) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 10.0 (1.5) 7.8 6.6 1.3 ± 0.15 8.6 ± 0.3 10.2 ± 0.3 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 0.3 3.0 +– 0.5 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code ⎯ RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V Unit: mm 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 R07DS0414EJ0100 Rev.1.00 May 18, 2011 MASS[Typ.] 1.40g 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) Package Name LDPAK(L) 0.4 ± 0.1 0.2 0.86 +– 0.1 2.54 ± 0.5 11.0 ± 0.5 1.3 ± 0.2 2.49 ± 0.2 0.4 ± 0.1 Page 7 of 8 CR12CS-16B Preliminary Ordering Information Orderable Part Number CR12CS-16B#B00 CR12CS-16B -T11#B00 CR12CS-16B -T21#B00 CR12CS-16B -A1#B00 Packing Tube Embossed Tape Embossed Tape Tube Quantity 50 pcs. 1000 pcs. 1000 pcs. 50 pcs. Remark LDPAK(S)-(1) LDPAK(S)-(1) , Taping direction “T1” LDPAK(S)-(1) , Taping direction “T2” LDPAK(L) Note : Please confirm the specification about the shipping in detail. R07DS0414EJ0100 Rev.1.00 May 18, 2011 Page 8 of 8 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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