CENTRAL CS39-4M

Central
CS39-4B
CS39-4D
CS39-4M
CS39-4N
SILICON CONTROLLED RECTIFIER
4.0 AMP, 200 THRU 800 VOLTS
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS39-4B
series type is a hermetically sealed silicon
controlled rectifier designed for sensing circuit
applications and control systems.
MARKING CODE: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CS39
-4B
CS39
-4D
200
400
CS39 CS39
-4M
-4N
600
800
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=10ms)
IT(RMS)
4.0
V
A
ITSM
35
A
I2t Value for Fusing (t=10ms)
I 2t
4.5
A2 s
Peak Gate Power (tp=10µs)
PGM
PG (AV)
3.0
W
Average Gate Power Dissipation
0.2
W
Peak Gate Current (tp=10µs)
IGM
1.2
Storage Temperature
Tstg
-40 to +150
-40 to +125
A
°C
Junction Temperature
TJ
Thermal Resistance
ΘJA
180
°C/W
Thermal Resistance
ΘJC
10
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
°C
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM, RGK=1KΩ
5.0
µA
IDRM, IRRM
Rated VDRM, VDRM, RGK=1KΩ, TC=125°C
200
µA
IGT
VD=12V, RL =10Ω
38
200
µA
IH
IT=50mA, RGK=1KΩ
0.25
5.0
mA
VGT
VD=12V, RL =10Ω
0.55
0.8
V
VTM
ITM=8.0A, tp=380µs
1.6
1.95
V
dv/dt
VD=2 /3 VDRM, RGK=1KΩ, TC=125°C
10
V/µs
R2 (18-August 2004)
Central
TM
Semiconductor Corp.
CS39-4B
CS39-4D
CS39-4M
CS39-4N
SILICON CONTROLLED RECTIFIER
4.0 AMP, 200 THRU 800 VOLTS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
MARKING CODE:
FULL PART NUMBER
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
MIN
MAX
A (DIA) 0.335 0.370 8.51
9.40
B (DIA) 0.315 0.335 8.00
8.51
C
0.040
1.02
D
0.240 0.260 6.10
6.60
E
0.500
12.70
F (DIA) 0.016 0.021 0.41
0.53
G (DIA)
0.200
5.08
H
0.100
2.54
I
0.028 0.034 0.71
0.86
J
0.029 0.045 0.74
1.14
TO-39 (REV: R1)
R2 (18-August 2004)