Central CSD-8M CSD-8N TM Semiconductor Corp. 8.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD -8M CSD -8N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=10ms) IT(RMS) 8.0 A ITSM 80 A I2t Value for Fusing (t=10ms) I 2t 32 A 2s Peak Gate Power (tp=10µs) PGM PG (AV) 40 W Average Gate Power Dissipation 1.0 W Peak Forward Gate Current (tp=10µs) IFGM 4.0 A Peak Forward Gate Voltage (tp=10µs) VFGM VRGM 16 V Peak Reverse Gate Voltage (tp=10µs) 5.0 V Critical Rate of Rise of On-State Current di/dt 50 A/µs Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω 3.0 15 mA IH VGT IT=100mA VD=12V, RL=10Ω 7.3 20 mA 0.9 1.5 V VTM ITM=16A, tp=380µs VD=2 /3 VDRM, TC=125°C 1.3 1.8 V dv/dt 200 10 µA 2.0 mA V/µs R0 (20-May 2004) Central TM CSD-8M CSD-8N Semiconductor Corp. 8.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0) R0 (20-May 2004)