CY7C1361A CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz Fast OE access times: 3.5 ns and 4.0 ns Optimal for depth expansion (one cycle chip deselect to eliminate bus contention) 3.3V –5% and +10% power supply 3.3V or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Multiple chip enables for depth expansion: A package version and two chip enables for BG and AJ package versions Address pipeline capability Address, data, and control registers Internally self-timed Write cycle Burst control pins (interleaved or linear burst sequence) Automatic power-down feature available using ZZ mode or CE deselect. JTAG boundary scan for BG and AJ package version Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1361A and CY7C1363A SRAMs integrate 262,144 × 36 and 524,288 × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), depth-expansion Chip Enables (CE2 and CE2), burst control inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and BWE), and global Write (GW). However, the CE2 chip enable input is only available for the TA package version. Asynchronous inputs include the Output Enable (OE) and burst mode control (MODE). The data outputs (Q), enabled by OE, are also asynchronous. Addresses and chip enables are registered with either Address Status Processor (ADSP) or Address Status Controller (ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (ADV). Address, data inputs, and Write controls are registered on-chip to initiate self-timed Write cycle. Write cycles can be one to four bytes wide as controlled by the Write control inputs. Individual byte Write allows individual byte to be written. BWa controls DQa. BWb controls DQb. BWc controls DQc. BWd controls DQd. BWa, BWb, BWc, and BWd can be active only with BWE being LOW. GW being LOW causes all bytes to be written. The x18 version only has 18 data inputs/outputs (DQa and DQb) along with BWa and BWb (no BWc, BWd, DQc, and DQd). For the B and T package versions, four pins are used to implement JTAG test capabilities: Test Mode Select (TMS), Test Data-In (TDI), Test Clock (TCK), and Test Data-Out (TDO). The JTAG circuitry is used to serially shift data to and from the device. JTAG inputs use LVTTL/LVCMOS levels to shift data during this testing mode of operation. The TA package version does not offer the JTAG capability. The CY7C1361A and CY7C1363A operate from a +3.3V power supply. All inputs and outputs are LVTTL-compatible. Selection Guide 7C1361A-150 7C1363A-150 7C1361A-133 7C1363A-133 7C1361A-117 7C1363A-117 7C1361A-100 7C1363A-100 Unit Maximum Access Time 6.0 6.5 7.0 8.0 ns Maximum Operating Current 480 360 320 270 mA Maximum CMOS Standby Current 10 10 10 10 mA Cypress Semiconductor Corporation Document #: 38-05259 Rev. *A • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised June 19, 2002 CY7C1361A CY7C1363A Functional Block Diagram–256K × 36[1] BYTE a WRITE BWa BWE D Q CLK BYTE b WRITE BWb D Q GW BYTE c WRITE BWc D Q BYTE d WRITE ENABLE D CE2 Q D Q byte b write byte a write CE Q byte c write D byte d write BWd [2]CE2 OE Power Down Logic Input Register ADSP A 16 Address Register CLR ADV OUTPUT REGISTER 256K x 9 x 4 SRAM Array ADSC D Output Buffers ZZ Q Binary Counter & Logic A1-A0 DQa,DQb DQc,DQd MODE Functional Block Diagram—512K × 18[1] BYTE b WRITE BWb BWE D Q BYTE a WRITE BWa D Q ENABLE D CE2 Q D Q byte b write CE byte a write GW CE2 ZZ Power Down Logic OE ADSP Input Register 17 ADSC CLR ADV A1-A0 Binary Counter & Logic OUTPUT REGISTER D Q Output Buffers Address Register 512K x 9 x 2 SRAM Array A DQa,DQb MODE Notes: 1. The Functional Block Diagram illustrates simplified device operation. See Truth Table, pin descriptions and timing diagrams for detailed information. 2. CE2 is for TA version only. Document #: 38-05259 Rev. *A Page 2 of 26 CY7C1361A CY7C1363A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 DQb DQb DQb VCCQ VSS DQb DQb DQb DQb VSS VCCQ DQb DQb VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa DQa DQa VSS VCCQ DQa DQa DQa DQc DQc DQc VCCQ VSS DQc DQc DQc DQc VSS VCCQ DQc DQc NC VCC NC VSS DQd DQd VCCQ VSS DQd DQd DQd DQd VSS VCCQ DQd DQd DQd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100-pin TQFP AJ Version DQb DQb DQb VCCQ VSS DQb DQb DQb DQb VSS VCCQ DQb DQb VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa DQa DQa VSS VCCQ DQa DQa DQa MODE A A A A A1 A0 NC NC VSS VCC NC A A A A A A A A MODE A A A A A1 A0 TMS TDI VSS VCC TDO TCK A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 100-pin TQFP A Version 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQc DQc DQc VCCQ VSS DQc DQc DQc DQc VSS VCCQ DQc DQc NC VCC NC VSS DQd DQd VCCQ VSS DQd DQd DQd DQd VSS VCCQ DQd DQd DQd 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE CE2 BWd BWc BWb BWa CE2 VCC VSS CLK GW BWE OE ADSC ADSP ADV A A CY7C1361A 256K × 36 100-pin TQFP A A CE CE2 BWd BWc BWb BWa A VCC VSS CLK GW BWE OE ADSC ADSP ADV A A Pin Configurations 100-pin TQFP A Version 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 MODE A A A A A1 A0 NC NC VSS VCC NC A A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VCCQ VSS NC NC DQb DQb VSS VCCQ DQb DQb NC VCC NC VSS DQb DQb VCCQ VSS DQb DQb DQb NC VSS VCCQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Document #: 38-05259 Rev. *A A NC NC VCCQ VSS NC DQa DQa DQa VSS VCCQ DQa DQa VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa NC NC VSS VCCQ NC NC NC NC NC NC VCCQ VSS NC NC DQb DQb VSS VCCQ DQb DQb NC VCC NC VSS DQb DQb VCCQ VSS DQb DQb DQb NC VSS VCCQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100-pin TQFP AJ Version 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VCCQ VSS NC DPa DQa DQa VSS VCCQ DQa DQa VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa NC NC VSS VDDQ NC NC NC 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC NC MODE A A A A A1 A0 TMS TDI VSS VCC TDO TCK A A A A A A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE CE2 NC NC BWb BWa CE2 VCC VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE CE2 NC NC BWb BWa A VCC VSS CLK GW BWE OE ADSC ADSP ADV A A CY7C1363A 512Kx18 100-Pin TQFP Page 3 of 26 CY7C1361A CY7C1363A Pin Configurations (continued) CY7C1361A 256K × 36 119-ball BGA Top View 1 2 3 4 5 6 7 A VCCQ A A ADSP A A VCCQ B NC CE2 A ADSC A A NC C NC A A VCC A A NC D DQc DQc VSS NC VSS DQb DQb E DQc DQc VSS CE VSS DQb DQb F VCCQ DQc VSS OE VSS DQb VCCQ G DQc DQc BWc ADV BWb DQb DQb H DQc DQc VSS GW VSS DQb DQb J VCCQ VCC NC VCC NC VCC VCCQ K DQd DQd VSS CLK VSS DQa DQa L DQd DQd BWd NC BWa DQa DQa M VCCQ DQd VSS BWE VSS DQa VCCQ N DQd DQd VSS A1 VSS DQa DQa P DQd DQd VSS A0 VSS DQa DQa R NC A MODE VCC NC A NC T NC NC A A A NC ZZ U VCCQ TMS TDI TCK TDO NC VCCQ CY7C1363A 512K × 18 119-ball BGA Top View A 1 2 3 4 5 6 7 VCCQ A A ADSP A A VCCQ B NC CE2 A ADSC A CE2 NC C NC A A VCC A A NC D DQb NC VSS NC VSS DQa NC E NC DQb VSS CE VSS NC DQa F VCCQ NC VSS OE VSS DQa VCCQ G NC DQb BWb ADV VSS NC DQa H DQb NC VSS GW VSS DQa NC J VCCQ VCC NC VCC NC VCC VCCQ K NC DQb VSS CLK VSS NC DQa L DQb NC VSS NC BWa DQa NC M VCCQ DQb VSS BWE VSS NC VCCQ N DQb NC VSS A1 VSS DQa NC P NC DQb VSS A0 VSS NC DQa R NC A MODE VCC NC A NC T NC A A NC A A ZZ U VCCQ TMS TDI TCK TDO NC VCCQ Document #: 38-05259 Rev. *A Page 4 of 26 CY7C1361A CY7C1363A 256K × 36 Pin Descriptions X36 PBGA Pins X36 QFP Pins 4P 37 4N 36 2A, 3A, 5A, 6A, 3B, 5B, 35, 34, 33, 32, 100, 6B, 2C, 3C, 5C, 6C, 99, 82, 81, 44, 45, 2R, 6R, 3T, 4T, 5T 46, 47, 48, 49, 50 92 (AJ Version) 43 (A Version) Pin Name Type Pin Description A0 A1 A InputSynchronous Addresses: These inputs are registered and must meet the set-up and hold times around the rising edge of CLK. The burst counter generates internal addresses associated with A0 and A1, during burst cycle and wait cycle. 5L 5G 3G 3L 93 94 95 96 BWa BWb BWc BWd InputSynchronous Byte Write: A byte Write is LOW for a Write cycle and HIGH for a Read cycle. BWa controls DQa. BWb controls DQb. BWc controls DQc. BWd controls DQd. Data I/O are high impedance if either of these inputs are LOW, conditioned by BWE being LOW. 4M 87 BWE InputSynchronous Write Enable: This active LOW input gates byte Write operations and must meet the set-up and hold times around the rising edge of CLK. 4H 88 GW InputSynchronous Global Write: This active LOW input allows a full 36-bit Write to occur independent of the BWE and BWn lines and must meet the set-up and hold times around the rising edge of CLK. 4K 89 CLK InputSynchronous Clock: This signal registers the addresses, data, chip enables, Write control, and burst control inputs on its rising edge. All synchronous inputs must meet set-up and hold times around the clock’s rising edge. 4E 98 CE InputSynchronous Chip Enable: This active LOW input is used to enable the device and to gate ADSP. 2B 97 CE2 InputSynchronous Chip Enable: This active HIGH input is used to enable the device. – (not available for PBGA) 92 (for A version only) CE2 InputSynchronous Chip Enable: This active LOW input is used to enable the device. Not available for BG and AJ package versions. 4F 86 OE Input Output Enable: This active LOW asynchronous input enables the data output drivers. 4G 83 ADV InputSynchronous Address Advance: This active LOW input is used to control the internal burst counter. A HIGH on this pin generates wait cycle (no address advance). 4A 84 ADSP InputSynchronous Address Status Processor: This active LOW input, along with CE being LOW, causes a new external address to be registered and a Read cycle is initiated using the new address. 4B 85 ADSC InputSynchronous Address Status Controller: This active LOW input causes the device to be deselected or selected along with new external address to be registered. A Read or Write cycle is initiated depending upon Write control inputs. 3R 31 MODE InputStatic Mode: This input selects the burst sequence. A LOW on this pin selects Linear Burst. A NC or HIGH on this pin selects Interleaved Burst. 7T 64 ZZ Document #: 38-05259 Rev. *A InputSleep: This active HIGH input puts the device in Asynchronous low-power consumption standby mode. For normal operation, this input has to be either LOW or NC (No Connect). Page 5 of 26 CY7C1361A CY7C1363A 256K × 36 Pin Descriptions (continued) X36 PBGA Pins X36 QFP Pins (a) 6P, 7P, 7N, 6N, 6M, 6L, 7L, 6K, 7K, (b) 7H, 6H, 7G, 6G, 6F, 6E, 7E, 7D, 6D, (c) 2D, 1D, 1E, 2E, 2F, 1G, 2G, 1H, 2H, (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P (a) 51, 52, 53, 56, 57, 58, 59, 62, 63 (b) 68, 69, 72, 73, 74, 75, 78, 79, 80 (c) 1, 2, 3, 6, 7, 8, 9, 12, 13 (d) 18, 19, 22, 23, 24, 25, 28, 29, 30 2U 3U 4U Pin Name Type Pin Description DQa DQb DQc DQd Input/ Output Data Inputs/Outputs: First Byte is DQa. Second Byte is DQb. Third Byte is DQc. Fourth Byte is DQd. Input data must meet set-up and hold times around the rising edge of CLK. 38 39 43 for BG and AJ version TMS TDI TCK Input IEEE 1149.1 Test Inputs: LVTTL-level inputs. Not available for A package version. 5U 42 for BG and AJ version TDO Output IEEE 1149.1 Test Output: LVTTL-level output. Not available for A package version. 4C, 2J, 4J, 6J, 4R 15, 41, 65, 91 VCC 3D, 5D, 3E, 5E, 3F, 5F, 5, 10, 17, 21, 26, 3H, 5H, 3K, 5K, 3M, 40, 55, 60, 67, 71, 5M, 3N, 5N, 3P, 5P 76, 90 Power Supply Core Power Supply: +3.3V – 5% and +10% VSS Ground 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 4, 11, 20, 27, 54, 61, 70, 77 VCCQ I/O Power Supply 1B, 7B, 1C, 7C, 4D, 3J, 5J, 4L, 1R, 5R, 7R, 1T, 2T, 6T, 6U 14, 16, 66 38, 39, 42 for A version NC – Ground: GND. Power Supply for the I/O circuitry No Connect: These signals are not internally connected. User can leave it floating or connect it to VCC or VSS. 512K × 18 Pin Descriptions X18 PBGA Pins X18 QFP Pins 4P 37 4N 36 2A, 3A, 5A, 6A, 3B, 35, 34, 33, 32, 100, 5B, 6B, 2C, 3C, 5C, 99, 82, 81, 80, 48, 6C, 2R, 6R, 2T, 3T, 5T, 47, 46, 45, 44, 49, 6T 50 92 (AJ Version) 43 (A Version) Pin Name Type Pin Description A0 A1 A InputSynchronous Addresses: These inputs are registered and must meet the set-up and hold times around the rising edge of CLK. The burst counter generates internal addresses associated with A0 and A1, during burst cycle and wait cycle. 5L 3G 93 94 BWa BWb InputSynchronous Byte Write Enables: A byte Write enable is LOW for a Write cycle and HIGH for a Read cycle. BWa controls DQa. BWb controls DQb. Data I/O are high impedance if either of these inputs are LOW, conditioned by BWE being LOW. 4M 87 BWE InputSynchronous Write Enable: This active LOW input gates byte Write operations and must meet the set-up and hold times around the rising edge of CLK. 4H 88 GW InputSynchronous Global Write: This active LOW input allows a full 18-bit Write to occur independent of the BWE and WEn lines and must meet the set-up and hold times around the rising edge of CLK. 4K 89 CLK InputSynchronous Clock: This signal registers the addresses, data, chip enables, Write control and burst control inputs on its rising edge. All synchronous inputs must meet set-up and hold times around the clock’s rising edge. 4E 98 CE InputSynchronous Chip Enable: This active LOW input is used to enable the device and to gate ADSP. Document #: 38-05259 Rev. *A Page 6 of 26 CY7C1361A CY7C1363A 512K × 18 Pin Descriptions (continued) X18 PBGA Pins X18 QFP Pins Pin Name 2B 97 – (not available for PBGA) Type Pin Description CE2 InputSynchronous Chip Enable: This active HIGH input is used to enable the device. 92 (for A Version only) CE2 InputSynchronous Chip Enable: This active LOW input is used to enable the device. Not available for BG and AJ package versions. 4F 86 OE Input Output Enable: This active LOW asynchronous input enables the data output drivers. 4G 83 ADV InputSynchronous Address Advance: This active LOW input is used to control the internal burst counter. A HIGH on this pin generates wait cycle (no address advance). 4A 84 ADSP InputSynchronous Address Status Processor: This active LOW input, along with CE being LOW, causes a new external address to be registered and a Read cycle is initiated using the new address. 4B 85 ADSC InputSynchronous Address Status Controller: This active LOW input causes device to be deselected or selected along with new external address to be registered. A Read or Write cycle is initiated depending upon Write control inputs. 3R 31 MODE InputStatic Mode: This input selects the burst sequence. A LOW on this pin selects Linear Burst. An NC or HIGH on this pin selects Interleaved Burst. 7T 64 ZZ (a) 6D, 7E, 6F, 7G, 6H, (a) 58, 59, 62, 63, 7K, 6L, 6N, 7P 68, 69, 72, 73, 74 (b) 1D, 2E, 2G, 1H, (b) 8, 9, 12, 13, 18, 2K, 1L, 2M, 1N, 2P 19, 22, 23, 24 InputSleep: This active HIGH input puts the device in low power Asynchronous consumption standby mode. For normal operation, this input has to be either LOW or NC (No Connect). DQa DQb Input/ Output Data Inputs/Outputs: Low Byte is DQa. High Byte is DQb. Input data must meet set-up and hold times around the rising edge of CLK. 2U 3U 4U 38 39 43 for BG and AJ version TMS TDI TCK Input IEEE 1149.1 Test Inputs: LVTTL-level inputs. Not available for A package version. 5U 42 for BG and AJ version TDO Output IEEE 1149.1 Test Output: LVTTL-level output. Not available for A package version. 4C, 2J, 4J, 6J, 4R 15, 41,65, 91 VCC Supply Core Power Supply: +3.3V –5% and +10% 3D, 5D, 3E, 5E, 3F, 5F, 5G, 3H, 5H, 3K, 5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P 5, 10, 17, 21, 26, 40, 55, 60, 67, 71, 76, 90 VSS Ground Ground: GND. 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 4, 11, 20, 27, 54, 61, 70, 77 VCCQ I/O Power Supply 1B, 7B, 1C, 7C, 2D, 1–3, 6, 7, 14, 16, 4D, 7D, 1E, 6E, 2F, 25, 28–30, 51–53, 1G, 6G, 2H, 7H, 3J, 56, 57, 66, 75, 78, 5J, 1K, 6K, 2L, 4L, 7L, 79, 80, 95, 96 6M, 2N, 7N, 1P, 6P, 38, 39, 42 for A 1R, 5R, 7R, 1T, 4T, 6U Version NC – Document #: 38-05259 Rev. *A Power Supply for the I/O circuitry No Connect: These signals are not internally connected. User can leave it floating or connect it to VCC or VSS. Page 7 of 26 CY7C1361A CY7C1363A Burst Address Table (MODE = NC/VCC) Burst Address Table (MODE = GND) First Address (external) Second Address (internal) Third Address (internal) Fourth Address (internal) First Address (external) Second Address (internal) Third Address (internal) Fourth Address (internal) A...A00 A...A01 A...A10 A...A11 A...A00 A...A01 A...A10 A...A11 A...A01 A...A00 A...A11 A...A10 A...A01 A...A10 A...A11 A...A00 A...A10 A...A11 A...A00 A...A01 A...A10 A...A11 A...A00 A...A01 A...A11 A...A10 A...A01 A...A00 A...A11 A...A00 A...A01 A...A10 Truth Table[3, 4, 5, 6, 7, 8, 9] Operation Address Used CE CE2 CE2 ADSP ADSC ADV Write OE CLK DQ Deselected Cycle, Power-down None H X X X L X X X L-H High-Z Deselected Cycle, Power-down None L X L L X X X X L-H High-Z Deselected Cycle, Power-down None L H X L X X X X L-H High-Z Deselected Cycle, Power-down None L X L H L X X X L-H High-Z Deselected Cycle, Power-down None L H X H L X X X L-H High-Z Read Cycle, Begin Burst External L L H L X X X L L-H Q Read Cycle, Begin Burst External L L H L X X X H L-H High-Z Write Cycle, Begin Burst External L L H H L X L X L-H D Read Cycle, Begin Burst External L L H H L X H L L-H Q Read Cycle, Begin Burst External L L H H L X H H L-H High-Z Read Cycle, Continue Burst Next X X X H H L H L L-H Q Read Cycle, Continue Burst Next X X X H H L H H L-H High-Z Read Cycle, Continue Burst Next H X X X H L H L L-H Q Read Cycle, Continue Burst Next H X X X H L H H L-H High-Z Write Cycle, Continue Burst Next X X X H H L L X L-H D Write Cycle, Continue Burst Next H X X X H L L X L-H D Read Cycle, Suspend Burst Current X X X H H H H L L-H Q Read Cycle, Suspend Burst Current X X X H H H H H L-H High-Z Read Cycle, Suspend Burst Current H X X X H H H L L-H Q Read Cycle, Suspend Burst Current H X X X H H H H L-H High-Z Write Cycle, Suspend Burst Current X X X H H H L X L-H D Write Cycle, Suspend Burst Current H X X X H H L X L-H D Notes: 3. X = “Don’t Care.” H = logic HIGH. L = logic LOW. For X36 product, Write = L means [BWE + BWa*BWb*BWc*BWd]*GW equals LOW. Write = H means [BWE + BWa*BWb*BWc*BWd]*GW equals HIGH. For X18 product, Write = L means [BWE + BWa*BWb]*GW equals LOW. Write = H means [BWE + BWa*BWb]*GW equals HIGH. 4. BWa enables Write to DQa. BWb enables Write to DQb. BWc enables Write to DQc. BWd enables Write to DQd. 5. All inputs except OE must meet set-up and hold times around the rising edge (LOW to HIGH) of CLK. 6. Suspending burst generates wait cycle.l 7. For a Write operation following a Read operation, OE must be HIGH before the input data required set-up time plus High-Z time for OE and staying HIGH throughout the input data hold time. 8. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 9. ADSP LOW along with chip being selected always initiates a Read cycle at the L-H edge of CLK. A Write cycle can be performed by setting Write LOW for the CLK L-H edge of the subsequent wait cycle. Refer to Write timing diagram for clarification. Document #: 38-05259 Rev. *A Page 8 of 26 CY7C1361A CY7C1363A Partial Truth Table for Read/Write[10] GW BWE BWa BWb BWc BWd Read Function H H X X X X Read H L H H H H Write one byte H L L H H H Write all bytes H L L L L L Write all bytes L X X X X X Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. ZZ Mode Electrical Characteristics Parameter IDDZZ tZZS tZZREC Description Sleep mode standby current Device operation to ZZ ZZ recovery time IEEE 1149.1 Serial Boundary Scan (JTAG) Overview This device incorporates a serial boundary scan test access port (TAP). This port is designed to operate in a manner consistent with IEEE Standard 1149.1-1990 (commonly referred to as JTAG), but does not implement all of the functions required for IEEE 1149.1 compliance. Certain functions have been modified or eliminated because their implementation places extra delays in the critical speed path of the device. Nevertheless, the device supports the standard TAP controller architecture (the TAP controller is the state machine that controls the TAPs operation) and can be expected to function in a manner that does not conflict with the operation of devices with IEEE Standard 1149.1 compliant TAPs. The TAP operates using LVTTL/ LVCMOS logic level signaling. Test Conditions ZZ > VDD – 0.2V ZZ > VDD – 0.2V ZZ < 0.2V Min. 2tCYC Max. 10 2tCYC Unit mA ns ns TMS–Test Mode Select (INPUT) The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. It is allowable to leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. TDI–Test Data In (INPUT) The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction register (refer to Figure 1, TAP Controller State Diagram). It is allowable to leave this pin unconnected if it is not used in an application. The pin is pulled up internally, resulting in a logic HIGH level. TDI is connected to the Most Significant Bit (MSB) of any register (see Figure 2). Disabling the JTAG Feature TDO–Test Data Out (OUTPUT) It is possible to use this device without using the JTAG feature. To disable the TAP controller without interfering with normal operation of the device, TCK should be tied LOW (VSS) to prevent clocking the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be pulled up to VCC through a resistor. TDO should be left unconnected. Upon power-up the device will come up in a reset state which will not interfere with the operation of the device. The TDO output pin is used to serially clock data-out from the registers. The output that is active depending on the state of the TAP state machine (refer to Figure 1, TAP Controller State Diagram). Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. TDO is connected to the Least Significant Bit (LSB) of any register (see Figure 2). Test Access Port TCK–Test Clock (INPUT) Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. Performing a TAP Reset The TAP circuitry does not have a reset pin (TRST, which is optional in the IEEE 1149.1 specification). A RESET can be performed for the TAP controller by forcing TMS HIGH (VCC) for five rising edges of TCK and pre-loads the instruction register with the IDCODE command. This type of reset does not affect the operation of the system logic. The reset affects test logic only. At power-up, the TAP is reset internally to ensure that TDO is in a High-Z state. Note: 10. For the X18 product, there are only BWa and BWb. Document #: 38-05259 Rev. *A Page 9 of 26 CY7C1361A CY7C1363A TAP Registers TAP Controller Instruction Set Overview Overview The various TAP registers are selected (one at a time) via the sequences of ones and zeros input to the TMS pin as the TCK is strobed. Each of the TAPs registers are serial shift registers that capture serial input data on the rising edge of TCK and push serial data out on subsequent falling edge of TCK. When a register is selected, it is connected between the TDI and TDO pins. There are two classes of instructions defined in the IEEE Standard 1149.1-1990; the standard (public) instructions and device specific (private) instructions. Some public instructions are mandatory for IEEE 1149.1 compliance. Optional public instructions must be implemented in prescribed ways. Instruction Register The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run test/idle or the various data register states. The instructions are three bits long. The register can be loaded when it is placed between the TDI and TDO pins. The parallel outputs of the instruction register are automatically preloaded with the IDCODE instruction upon power-up or whenever the controller is placed in the test-logic reset state. When the TAP controller is in the Capture-IR state, the two least significant bits of the serial instruction register are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register The bypass register is a single-bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the device TAP to another device in the scan chain with minimum delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The Boundary Scan register is connected to all the input and bidirectional I/O pins (not counting the TAP pins) on the device. This also includes a number of NC pins that are reserved for future needs. There are a total of 70 bits for the x36 device and 51 bits for the x18 device. The boundary scan register, under the control of the TAP controller, is loaded with the contents of the device I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE-Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order table describes the order in which the bits are connected. The first column defines the bit’s position in the boundary scan register. The MSB of the register is connected to TDI, and LSB is connected to TDO. The second column is the signal name, the third column is the TQFP pin number, and the fourth column is the BGA bump number. Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the device as described in the Identification Register Definitions table. Document #: 38-05259 Rev. *A Although the TAP controller in this device follows the IEEE 1149.1 conventions, it is not IEEE 1149.1-compliant because some of the mandatory instructions are not fully implemented. The TAP on this device may be used to monitor all input and I/O pads, but can not be used to load address, data, or control signals into the device or to preload the I/O buffers. In other words, the device will not perform IEEE 1149.1 EXTEST, INTEST, or the preload portion of the SAMPLE/PRELOAD command. When the TAP controller is placed in Capture-IR state, the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction sets for this device are listed in the following tables. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this device. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the device responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between two instructions. Unlike SAMPLE/PRELOAD instruction, EXTEST places the device outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in the instruction upon power-up and at any time the TAP controller is placed in the test-logic reset state. SAMPLE-Z If the High-Z instruction is loaded in the instruction register, all output pins are forced to a High-Z state and the boundary scan register is connected between TDI and TDO pins when the TAP controller is in a Shift-DR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is an IEEE 1149.1 mandatory instruction. The PRELOAD portion of the command is not implemented in this device, so the device TAP controller is not fully IEEE 1149.1-compliant. When the SAMPLE/PRELOAD instruction is loaded in the instruction register and the TAP controller is in the Capture-DR state, a snap shot of the data in the device’s input and I/O buffers is loaded into the boundary scan register. Because the device system clock(s) are independent from the TAP clock Page 10 of 26 CY7C1361A CY7C1363A (TCK), it is possible for the TAP to attempt to capture the input and I/O ring contents while the buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results can not be expected. To guarantee that the boundary scan register will capture the correct value of a signal, the device input signals must be stabilized long enough to meet the TAP controller’s capture set-up plus hold time (tCS plus tCH). The device clock input(s) need not be paused for any other TAP operation except capturing the input and I/O ring contents into the boundary scan register. state with the SAMPLE/PRELOAD instruction loaded in the instruction register has the same effect as the Pause-DR command. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. Because the PRELOAD portion of the command is not implemented in this device, moving the controller to the Update-DR Reserved 1 0 TEST-LOGIC RESET 0 REUN-TEST/ IDLE 1 BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP controller is in the Shift-DR state, the bypass register is placed between TDI and TDO. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Do not use these instructions. They are reserved for future use. 1 1 SELECT DR-SCAN SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 SHIFT-DR 0 SHIFT-IR 1 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-DR 0 0 PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR 1 0 UPDATE-IR 1 0 Figure 1. TAP Controller State Diagram[11] Note: 11. The “0”/”1” next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05259 Rev. *A Page 11 of 26 CY7C1361A CY7C1363A 0 Bypass Register Selection Circuitry 2 TDI 1 0 1 0 1 0 Selection Circuitry TDO Instruction Register 31 30 29 . . 2 Identification Register x . . . . 2 Boundary Scan Register [12] TDI TAP Controller TDI Figure 2. TAP Controller Block Diagram TAP Electrical Characteristics (20°C < Tj < 110°C; VCC = 3.3V –0.2V and +0.3V unless otherwise noted) Parameter Description Min. Max. Unit VIH Input High (Logic 1) Voltage[13, 14] Test Conditions 2.0 VCC + 0.3 V VIl Input Low (Logic 0) Voltage[13, 14] –0.3 0.8 V ILI Input Leakage Current 0V < VIN < VCC –5.0 5.0 µA ILI TMS and TDI Input Leakage Current 0V < VIN < VCC –30 30 µA ILO Output Leakage Current Output disabled, 0V < VIN < VCCQ –5.0 5.0 µA VOLC LVCMOS Output Low Voltage[13, 15] IOLC = 100 µA 0.2 V VOHC LVCMOS Output High Voltage[13, 15] IOHC = 100 µA VOLT LVTTL Output Low Voltage[13] IOLT = 8.0 mA VOHT LVTTL Output High Voltage[13] IOHT = 8.0 mA VCC – 0.2 V 0.4 2.4 V V Notes: 12. X = 69 for the x36 configuration; X = 50 for the x18 configuration. 13. All Voltage referenced to VSS (GND). 14. Overshoot: VIH(AC) < VCC + 1.5V for t < tKHKH/2; undershoot: VIL(AC) < – 0.5V for t < tKHKH/2; power-up: VIH < 3.6V and VCC < 3.135V and VCCQ < 1.4V for t < 200 ms. During normal operation, VCCQ must not exceed VCC. Control input signals (such as R/W, ADV/LD) may not have pulse widths less than tKHKL (min.). 15. This parameter is sampled. Document #: 38-05259 Rev. *A Page 12 of 26 CY7C1361A CY7C1363A TAP AC Switching Characteristics Over the Operating Range[16, 17] Parameter Description Min. Max. Unit Clock tTHTH Clock Cycle Time 20 ns fTF Clock Frequency tTHTL Clock HIGH Time 8 ns tTLTH Clock LOW Time 8 ns tTLQX TCK LOW to TDO Unknown 0 tTLQV TCK LOW to TDO Valid tDVTH TDI Valid to TCK HIGH 5 ns tTHDX TCK HIGH to TDI Invalid 5 ns tMVTH TMS Set-up 5 ns tTDIS TDI Set-up to TCK Clock Rise 5 ns tCS Capture Set-up 5 ns tTHMX TMS Hold 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold 5 ns 50 MHz Output Times ns 10 ns Set-up Times Hold Times TAP Timing and Test Conditions ALL INPUT PULSES TDO Z0 = 50 Ω 50 Ω 3.0V 20 pF 1.5V VSS Vt = 1.5V 1.5 ns 1.5 ns (b) (a) t tTHTH THTL t TLTH TEST CLOCK (TCK) tMVTH tTHMX tDVTH tTHDX TEST MODE SELECT (TMS) TEST DATA IN (TDI) tTLQV tTLQX TEST DATA OUT (TDO) Notes: 16. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 17. Test conditions are specified using the load in TAP AC test conditions. Document #: 38-05259 Rev. *A Page 13 of 26 CY7C1361A CY7C1363A Identification Register Definitions Instruction Field 256K x 36 512K x 18 Revision Number (31:28) XXXX XXXX Reserved for revision number. Device Depth (27:23) 00110 00111 Defines depth of 256K or 512K words. 00100 00011 Defines width of x36 or x18 bits. XXXXXX XXXXXX Device Width (22:18) Reserved (17:12) Cypress Jedec ID Code (11:1) 00011100100 ID Register Presence Indicator (0) 1 Description Reserved for future use. 00011100100 Allows unique identification of device vendor. 1 Indicates the presence of an ID register. Scan Register Sizes Register Name Instruction Bit Size (x36) Bit Size (x18) 3 3 Bypass 1 1 ID 32 32 Boundary Scan 70 51 Instruction Codes Code Description EXTEST Instruction 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all device outputs to High-Z state. This instruction is not IEEE 1149.1-compliant. IDCODE 001 Preloads ID register with vendor ID code and places it between TDI and TDO. This instruction does not affect device operations. SAMPLE-Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all device outputs to High-Z state. RESERVED 011 Do not use these instructions; they are reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This instruction does not affect device operations. This instruction does not implement IEEE 1149.1 PRELOAD function and is therefore not 1149.1-compliant. RESERVED 101 Do not use these instructions; they are reserved for future use. RESERVED 110 Do not use these instructions; they are reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This instruction does not affect device operations. Document #: 38-05259 Rev. *A Page 14 of 26 CY7C1361A CY7C1363A Boundary Scan Order (256K × 36) (continued) Boundary Scan Order (256K × 36) Bit# Signal Name TQFP Bump ID Bit# Signal Name TQFP Bump ID A 92 6B 1 A 44 2R 36 2 A 45 3T 37 BWa 93 5L BWb 94 5G 3 A 46 4T 38 4 A 47 5T 39 BWc 95 3G BWd 96 3L 5 A 48 6R 40 6 A 49 3B 41 CE2 97 2B CE 98 4E 7 A 50 5B 42 8 DQa 51 6P 43 A 99 3A A 100 2A 9 DQa 52 7N 44 10 DQa 53 6M 45 DQc 1 2D DQc 2 1E 11 DQa 56 7L 46 12 DQa 57 6K 47 DQc 3 2F DQc 6 1G 13 DQa 58 7P 48 14 DQa 59 6N 49 DQc 7 2H DQc 8 1D 15 DQa 62 6L 50 16 DQa 63 7K 51 DQc 9 2E DQc 12 2G 17 ZZ 64 7T 52 18 DQb 68 6H 53 DQc 13 1H NC 14 5R 19 DQb 69 7G 54 20 DQb 72 6F 55 DQd 18 2K DQd 19 1L 21 DQb 73 7E 56 22 DQb 74 6D 57 DQd 22 2M DQd 23 1N 23 DQb 75 7H 58 24 DQb 78 6G 59 DQd 24 2P DQd 25 1K 25 DQb 79 6E 60 26 DQb 80 7D 61 DQd 28 2L DQd 29 2N 27 A 81 6A 62 28 A 82 5A 63 DQd 30 1P MODE 31 3R 29 ADV 83 4G 64 30 ADSP 84 4A 65 A 32 2C A 33 3C 31 ADSC 85 4B 66 32 OE 86 4F 67 A 34 5C A 35 6C 33 BWE 87 4M 68 34 GW 88 4H 69 A1 36 4N 4K 70 A0 37 4P 35 CLK Document #: 38-05259 Rev. *A 89 Page 15 of 26 CY7C1361A CY7C1363A Boundary Scan Order (512K × 18) (continued) Boundary Scan Order (512K × 18) Bit# Signal Name TQFP Bump ID Bit# Signal Name TQFP Bump ID CLK 89 4K 1 A 44 2R 27 2 A 45 2T 28 A 92 6B BWa 93 5L 3 A 46 3T 29 4 A 47 5T 30 BWb 94 3G CE2 97 2B 5 A 48 6R 31 6 A 49 3B 32 CE 98 4E A 99 3A 7 A 50 5B 33 8 DQa 58 7P 34 A 100 2A DQb 8 1D 9 DQa 59 6N 35 10 DQa 62 6L 36 DQb 9 2E DQb 12 2G 11 DQa 63 7K 37 12 ZZ 64 7T 38 DQb 13 1H NC 14 5R 13 DQa 68 6H 39 14 DQa 69 7G 40 DQb 18 2K DQb 19 1L 15 DQa 72 6F 41 16 DQa 73 7E 42 DQb 22 2M DQb 23 1N 17 DQa 74 6D 43 18 A 80 6T 44 DQb 24 2P MODE 31 3R 19 A 81 6A 45 20 A 82 5A 46 A 32 2C A 33 3C 21 ADV 83 4G 47 22 ADSP 84 4A 48 A 34 5C A 35 6C 23 ADSC 85 4B 49 24 OE 86 4F 50 A1 36 4N 51 A0 37 4P 25 BWE 87 4M 26 GW 88 4H Document #: 38-05259 Rev. *A Page 16 of 26 CY7C1361A CY7C1363A Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Voltage on VCC Supply Relative to VSS[19] ....... –0.5V to +4.6V VIN .......................................................... –0.5V to VCC + 0.5V Storage Temperature (plastic) ...................... –55°C to +150° Junction Temperature ..................................................+150° Power Dissipation .........................................................1.0W Short Circuit Output Current ........................................ 50 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA Operating Range Range Ambient Temperature[18] VCC[19] VCCQ Commercial 0°C to +70°C 3.3V–5/ 2.5V–5/ +10% 3.3V+10% Industrial –40°C to +85°C Electrical Characteristics Over the Operating Range Parameter VIHD Description Input High (Logic 1) Voltage[13, 20] VIH VIL Input Low (Logic 0) Voltage[13, 20] Min. Max. Unit All other inputs Test Conditions 2.0 VCC5 + 0.5 V 3.3V I/O 2.0 V 2.5V I/O 1.7 V 3.3V I/O –0.3 0.8 V 2.5V I/O –0.3 0.7 V 5 µA – 30 µA – 5 µA ILI Input Leakage Current ILI MODE and ZZ Input Leakage Current[21] 0V < VIN < VCC 0V < VIN < VCC ILO Output Leakage Current Output(s) disabled, 0V < VOUT < VCC VOH Output High Voltage[13] IOH = –5.0 mA for 3.3V I/O 2.4 IOH = –1.0 mA for 2.5V I/O 2.0 VOL Output Low Voltage[13] VCC[19] Supply Voltage[13] IOL = 8.0 mA for 3.3V I/O IOL = 1.0 mA for 2.5V I/O VCCQ [13] I/O Supply Voltage V V 0.4 V 0.4 V 3.135 3.63 V 3.3V I/O 3.135 3.63 V 2.5V I/O 2.375 2.9 V Max. 150 133 117 100 Parameter Description Conditions Typ. MHz MHz MHz MHz ICC VCC Operating Supply[22, 23, 24] Device selected; all inputs < VILor > VIH; cycle 150 480 440 410 380 time > tKC min.; VCC = Max.; outputs open 150 250 235 220 210 Automatic CE Device deselected; ISB1 Power-down all inputs < VIL or > VIH; VCC = Max.; Current—TTL Inputs[23, 24] CLK cycle time > tKC Min. ISB2 Automatic CE Device deselected; VCC = Max.; 5 10 10 10 10 Power-down all inputs < VSS + 0.2 or > VCC – 0.2; Current—CMOS Inputs[23, 24] all inputs static; CLK frequency = 0 Automatic CE Max. VDD Device Deselected, or V IN < 90 160 145 130 115 ISB3 Power-down Current— 0.3V or VIN > VDDQ — 0.3V f = f MAX = 1/t CYC CMOS Inputs 15 30 30 30 30 Automatic CS Device deselected; all inputs < VIL ISB4 Power-down or > VIH; all inputs static; Current—TTL Inputs[23, 24] VCC = Max. CLK frequency = 0 Unit mA mA mA mA mA Capacitance[15] Parameter CI CI/O Description Test Conditions Input Capacitance TA = 25°C, f = 1 MHz, Input/Output Capacitance (DQ) VCC = 3.3V Typ. 5 7 Max. 7 8 Unit pF pF Notes: 18. TA is the case temperature. 19. The ground level at the start of “power on” on the VCC pins should be no greater than 200mV. 20. Overshoot: VIH < + 6.0V for t < tKC /2; undershoot: VIL < – 2.0V for t < tKC /2. 21. Output loading is specified with CL=5 pF as in AC Test Loads. 22. ICC is given with no output current. ICC increases with greater output loading and faster cycle times. 23. “Device Deselected” means the device is in power-down mode as defined in the truth table. “Device Selected” means the device is active. 24. Typical values are measured at 3.3V, 25°C, and 20-ns cycle time. Document #: 38-05259 Rev. *A Page 17 of 26 CY7C1361A CY7C1363A Thermal Resistance[15] Parameter Description Test Conditions ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) TQFP Typ. Unit 25 °C/W 9 °C/W Still Air, soldered on a 4.25 × 1.125 inch, 4-layer PCB AC Test Loads and Waveforms R = 317Ω VCCQ OUTPUT ALL INPUT PULSES OUTPUT Z0 = 50Ω Vcc 5 pF R = 351Ω VTH = 1.5V INCLUDING JIG AND SCOPE (a) 90% 10% 90% 10% RL = 50Ω GND ≤ 1 V/ns ≤ 1 V/ns (c) (b) Switching Characteristics Over the Operating Range[25] 150 MHz Parameter Description Min. Max. 133 MHz Min. Max. 117 MHz Min. Max. 100 MHz Min. Max. Unit Clock tKC Clock Cycle Time 6.7 7.5 8.5 10 ns tKH Clock HIGH Time 2.5 2.5 3.0 3.5 ns tKL Clock LOW Time 2.5 2.5 3.0 3.5 ns Output Times tKQ Clock to Output Valid VCCQ = 3.3V 6.0 6.5 7.0 8.0 ns VCCQ = 2.5V 6.5 7.0 7.5 9.0 ns tKQX Clock to Output Invalid 2 2 2 2 ns tKQLZ Clock to Output in Low-Z[15, 21, 26] 0 0 0 0 ns tKQHZ Clock to Output in High-Z[15, 21, 26] 2 tOEQ OE to Output Valid[27] tOELZ OE to Output in Low-Z[15, 21, 26] tOEHZ High-Z[15, 21, 26] VCCQ = 3.3V 2 3.5 VCCQ = 2.5V OE to Output in 3.5 2 3.5 4.5 0 3.5 3.5 2 3.5 4.5 0 3.5 4.5 0 3.5 3.5 ns 4.0 ns 5.0 ns 0 3.5 ns 3.5 ns Set-up Times tS Address, Controls, and Data In[28] 1.5 1.5 1.8 2.0 ns Address, Controls, and Data In[28] 0.5 0.5 0.5 0.5 ns Hold Times tH Notes: 25. Test conditions as specified with the output loading as shown in part (a) of AC Test Loads unless otherwise noted. 26. At any given temperature and voltage condition, tKQHZ is less than tKQLZ and tOEHZ is less than tOELZ. 27. OE is a “Don’t Care” when a byte Write enable is sampled LOW. 28. This is a synchronous device. All synchronous inputs must meet specified set-up and hold time, except for “Don’t Care” as defined in the truth table. Document #: 38-05259 Rev. *A Page 18 of 26 CY7C1361A CY7C1363A Switching Waveforms Read Timing[29, 30] tKC tKL CLK tS tKH ADSP tH ADSC tS A1 ADDRESS tH BWa, BWb, [29] BWc, BWd, [29] BWE, GW CE A2 [30] [30] tS ADV tH OE tKQ DQ tKQLZ tOELZ Q(A1) SINGLE READ tKQ tOEQ Q(A2) Q(A2+1) Q(A2+2) Q(A2+3) Q(A2) Q(A2+1) Q(A2 BURST READ Notes: 29. CE active in this timing diagram means that all chip enables CE, CE2, and CE2 are active. CE2 is only available for A package version. 30. For the X18 product, there are only BWa and BWb for byte Write control. Document #: 38-05259 Rev. *A Page 19 of 26 CY7C1361A CY7C1363A Switching Waveforms (continued) Write Timing[29, 30] CLK tS ADSP tH ADSC tS A1 ADDRESS A2 A3 tH BWa, BWb, [29] BWc, BWd, [29] BWE GW [30] CE [30] tS ADV tH OE tKQX DQ Q tOEHZ D(A1) SINGLE WRITE Document #: 38-05259 Rev. *A D(A2) D(A2+2) D(A2+2) D(A2+2) BURST WRITE D(A2+3) D(A3) D(A3+1) D(A3+2) BURST WRITE Page 20 of 26 CY7C1361A CY7C1363A Switching Waveforms (continued) Read/Write Timing[29, 30] CLK tS ADSP tH ADSC tS ADDRESS A1 BWa, BWb, [29] BWc, BWd, [29] BWE, GW A2 A3 A4 A5 tH [30] CE [30] ADV OE DQ Q(A1) Q(A2) Single Reads Document #: 38-05259 Rev. *A D(A3) Single Write Q(A4) Q(A4+1) Q(A4+2) Burst Read Q(A4+3) D(A5) D(A5+1) Burst Write Page 21 of 26 CY7C1361A CY7C1363A Switching Waveforms (continued) ZZ Mode Timing [31, 32] CLK ADSP HIGH ADSC CE1 LOW CE2 HIGH CE3 ZZ tZZS IDD IDD(active) tZZREC IDDZZ I/Os Three-state Notes: 31. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 32. I/Os are in three-state when exiting ZZ sleep mode. Ordering Information Speed (MHz) 150 Ordering Code CY7C1361A-150AJC CY7C1361A-150AC 133 117 Package Type Operating Range A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack Commercial A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-150BGC BG119 CY7C1361A-133AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-133AC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-ball BGA (14 x 22 x 2.4 mm) CY7C1361A-133BGC BG119 CY7C1361A-117AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-117AC 100 Package Name 119-ball BGA (14 x 22 x 2.4 mm) CY7C1361A-117BGC BG119 CY7C1361A-100AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-100AC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-100BGC Document #: 38-05259 Rev. *A BG119 119-ball BGA (14 x 22 x 2.4 mm) 119-ball BGA (14 x 22 x 2.4 mm) Page 22 of 26 CY7C1361A CY7C1363A Ordering Information (continued) Speed (MHz) 150 133 Package Name Package Type Operating Range CY7C1363A-150AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack Commercial CY7C1363A-150AC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack Ordering Code CY7C1363A-150BGC BG119 CY7C1363A-133AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-133AC 117 100 CY7C1363A-133BGC BG119 CY7C1363A-117AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-117AC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack BG119 CY7C1363A-100AJC A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-100BGC 117 133 100 119-ball BGA (14 x 22 x 2.4 mm) A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-133AI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-133BGI BG119 CY7C1361A-117AJI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack BG119 CY7C1361A-100AJI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1361A-100AI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-ball BGA (14 x 22 x 2.4 mm) CY7C1361A-100BGI BG119 CY7C1363A-133AJI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-ball BGA (14 x 22 x 2.4 mm) A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-133BGI BG119 CY7C1363A-117AJI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-117AI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack BG119 CY7C1363A-100AJI A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack A101 100-lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1363A-100BGI Document #: 38-05259 Rev. *A BG119 Industrial temp 119-ball BGA (14 x 22 x 2.4 mm) CY7C1363A-117BGI CY7C1363A-100AI Industrial temp 119-ball BGA (14 x 22 x 2.4 mm) CY7C1361A-117BGI CY7C1363A-133AI 117 BG119 119-ball BGA (14 x 22 x 2.4 mm) CY7C1361A-133AJI CY7C1361A-117AI 100 119-ball BGA (14 x 22 x 2.4 mm) CY7C1363A-117BGC CY7C1363A-100AC 133 119-ball BGA (14 x 22 x 2.4 mm) 119-ball BGA (14 x 22 x 2.4 mm) 119-ball BGA (14 x 22 x 2.4 mm) Page 23 of 26 CY7C1361A CY7C1363A Package Diagrams 100-lead Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 51-85050-A Document #: 38-05259 Rev. *A Page 24 of 26 CY7C1361A CY7C1363A Package Diagrams (continued) 119-ball BGA (14 x 22 x 2.4) BG119 51-85115-*A All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05259 Rev. *A Page 25 of 26 © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1361A CY7C1363A Document Title:CY7C1361A/CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Document Number: 38-05259 REV ECN No. Issue Date Orig. of Change ** 113847 05/17/02 GLC New Data Sheet *A 116225 06/20/02 BRI Removed GVT part numbers from title and body of datasheet Corrected CY part numbers in body of datasheet Corrected the read and write timing diagrams Added note 19 (pg. 19) regarding VCC on “Power On” Document #: 38-05259 Rev. *A Description of Change Page 26 of 26