CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Synchronous Pipelined SRAM Features • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns • Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz • Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns • Optimal for performance (two cycle chip deselect, depth expansion without wait state) • 3.3V –5% and +10% power supply • 3.3V or 2.5V I/O supply • 5V tolerant inputs except I/Os • Clamp diodes to VSS at all inputs and outputs • Common data inputs and data outputs • Byte Write Enable and Global Write control • Multiple chip enables for depth expansion: three chip enables for TA(GVTI)/A(CY) package version and two chip enables for B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package versions • Address pipeline capability • Address, data and control registers • Internally self-timed Write Cycle • Burst control pins (interleaved or linear burst sequence) • Automatic power-down feature available using ZZ mode or CE select. • JTAG boundary scan for B/BG and T/AJ package version • Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The CY7C1366A/GVT71256C36 and CY7C1367A/ GVT71512C18 SRAMs integrate 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), depth-expansion Chip Enables (CE2 and CE3), Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and BWE), and Global Write (GW). However, the CE3 Chip Enable input is only available for the TA(GVTI)/A(CY) package version. Asynchronous inputs include the Output Enable (OE) and Burst Mode Control (MODE). The data outputs (Q), enabled by OE, are also asynchronous. Addresses and chip enables are registered with either Address Status Processor (ADSP) or Address Status Controller (ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed WRITE cycle. WRITE cycles can be one to four bytes wide, as controlled by the write control inputs. Individual byte write allows an individual byte to be written. BWa controls DQa. BWb controls DQb. BWc controls DQc. BWd controls DQd. BWa, BWb, BWc, and BWd can be active only with BWE being LOW. GW being LOW causes all bytes to be written. The x18 version only has 18 data inputs/outputs (DQa and DQb) along with BWa and BWb (no BWc, BWd, DQc, and DQd). For the B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package versions, four pins are used to implement JTAG test capabilities: Test Mode Select (TMS), Test Data-In (TDI), Test Clock (TCK), and Test Data-Out (TDO). The JTAG circuitry is used to serially shift data to and from the device. JTAG inputs use LVTTL/LVCMOS levels to shift data during this testing mode of operation. The TA package version does not offer the JTAG capability. The CY7C1366A/GVT71256C36 and CY7C1367A/ GVT71512C18 operate from a +3.3V power supply. All inputs and outputs are LVTTL compatible. Selection Guide 7C1366A-225/ 71256C36-4.4 7C1367A-225/ 71512C18-4.4 7C1366A-200/ 71256C36-5 7C1367A-200/ 71512C18-5 7C1366A-166/ 71256C36-6 7C1367A-166/ 71512C18-6 7C1366A-150/ 71256C36-6.7 7C1367A-150/ 71512C18-6.7 Unit Maximum Access Time 2.5 3.0 3.5 3.5 ns Maximum Operating Current 570 510 425 380 mA Maximum CMOS Standby Current 10 10 10 10 mA Cypress Semiconductor Corporation Document #: 38-05264 Rev. *A • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised March 17, 2003 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Functional Block Diagram—256K x 36[1, 2] B Y T E a W R IT E BW B W aa BWE BWE D Q CLK CLK B Y T E b W R IT E B W bb BW D Q GW GW B Y T E c W R IT E BW B W cc D Q B Y T E d W R IT E Q Q [2] P o w er D o w n L o g ic In p u t R eg is ter AADSP DSP A D 16 A A d d res s R eg ister CLR ADV ADV O U TPU T R E G IS T E R 256K x 9 x 4 SRAM Array AADSC D SC D Output Buffers OE OE ZZZ Z E N A B LE byte a write D byte b write CE C1 E CE2 CE 2 CE2 CE 3 Q byte c write D byte d write B W dd BW Q B in ary C o u nter & L o g ic A0-A1 A 1-A 0 MODE M ODE DDQa, Q a,D QDQb, b DDQc, Q c,D QDQd d Functional Block Diagram—512K x 18[1] BYTE b WRITE BWb BWb BWE BWE D Q CLK BYTE a WRITE BWa BWa D Q ZZZZ byte a write CE CE 1 CE CE2 2 CE CE2 3 ENABLE [2] D Q D byte b write GW GW Q Power Down Logic OE OE ADSP ADSP Input Register 17 CLR ADV ADV A0-A1 A1-A0 MODE MODE Binary Counter & Logic OUTPUT REGISTER D Q Output Buffers Address Register ADSC ADSC 512K x 9 x 2 SRAM Array A A DQa,D DQa, DQb, Qb Notes: 1. The Functional Block Diagram illustrates simplified device operation. See the Truth Table, pin descriptions, and timing diagrams for detailed information. 2. CE3 is for the TA version only. Document #: 38-05264 Rev. *A Page 2 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Pin Configurations A A CE1 CE2 BWd BWc BWb BWa A VCC VSS CLK GW BWE OE ADSC ADSP ADV A A A A C E1 C E2 BW d BW c BW b BW a C E3 VCC V SS CL K GW BW E OE A DSC A DSP A DV A A CY7C1366A/GVT71256C36 256Kx 36 100-pin TQFP 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100-pinTQFP TQFP 100-Pin TA Package Version DQb DQb DQb V CCQ V SS DQb DQb DQb DQb V SS V CCQ DQb DQb V SS NC V CC ZZ DQa DQa V CCQ V SS DQa DQa DQa DQa V SS V CCQ DQa DQa DQa NC A A A A A A A A M ODE MODE A A A A A1 A0 TMS TDI VSS VCC TDO TCK A A A A A A A 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 38 39 40 41 42 43 44 45 46 47 48 49 50 T Package Version 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 100-pin TQFP DQc DQc DQc VCCQ V SS DQc DQc DQc DQc V SS VCCQ DQc DQc NC V CC NC V SS DQd DQd VCCQ V SS DQd DQd DQd DQd V SS VCCQ DQd DQd DQd NC DQb DQb DQb VCCQ VSS DQb DQb DQb DQb VSS VCCQ DQb DQb VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa DQa DQa VSS VCCQ DQa DQa DQa 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A A A A A1 A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQc DQc DQc VCCQ VSS DQc DQc DQc DQc VSS VCCQ DQc DQc NC VCC NC VSS DQd DQd VCCQ VSS DQd DQd DQd DQd VSS VCCQ DQd DQd DQd NC V SS VC C 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 99 98 97 96 95 Top View A A CE1 CE2 NC NC BWb BWa CE3 VCC VSS CLK GW BWE OE ADSC ADSP ADV A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A NC NC V CCQ V SS NC DPa DQa DQa V SS V CCQ DQa DQa V SS NC V CC ZZ DQa DQa V CCQ V SS DQa DQa NC NC V SS V DDQ NC NC NC NC NC NC VCCQ VSS NC NC DQb DQb VSS VCCQ DQb DQb NC VCC NC VSS DQb DQb VCCQ VSS DQb DQb DQb NC VSS VCCQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100-pin TQFP TA Package Version 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VCCQ VSS NC DPa DQa DQa VSS VCCQ DQa DQa VSS NC VCC ZZ DQa DQa VCCQ VSS DQa DQa NC NC VSS VCCQ NC NC NC 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A A A 48 A 49 47 A A 45 A 46 44 T CK V CC 43 41 VS S T DO 40 Document #: 38-05264 Rev. *A 42 39 36 A1 T DI 35 A 38 34 A 37 33 A A0 32 TMS 31 T Package Version 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 MODE A A A A A1 A0 NC NC VSS VCC NC A A A A A A A A A 81 A DV 82 A DSP 83 A DSC 84 GW OE C LK 88 85 V SS 89 B WE V CC 90 86 A 91 87 B Wa 92 B Wb NC 93 NC 95 94 CE2 96 C E1 97 A 98 A 99 Top View 100-pin TQFP 100-pin TQFP A V CCQ V SS NC NC DQb DQb V SS V CCQ DQb DQb NC V CC NC V SS DQb DQb V CCQ V SS DQb DQb DQb NC V SS V CCQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 M O DE NC NC NC 100 CY7C1367A/GVT71512C18 512K x 18 100- pin TQFP Page 3 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Pin Configurations (continued) CY7C1366A/GVT71256C36 256K x 36 119-ball BGA Top View 256Kx36 1 2 3 4 5 6 7 A VCCQ A A ADSP A A VCCQ B NC CE2 A ADSC A A NC C NC A A VCC A A NC D DQc DQc VSS NC VSS DQb DQb E DQc DQc VSS CE1 VSS DQb DQb F VCCQ DQc VSS OE VSS DQb VCCQ G DQc DQc BWc ADV BWb DQb DQb H DQc DQc VSS GW VSS DQb DQb J VCCQ VCC NC VCC NC VCC VCCQ K DQd DQd VSS CLK VSS DQa DQa L DQd DQd BWd NC BWa DQa DQa M VCCQ DQd VSS BWE VSS DQa VCCQ N DQd DQd VSS A1 VSS DQa DQa P DQd DQd VSS A0 VSS DQa DQa R NC A MODE VCC NC A NC T NC NC A A A NC ZZ U VCCQ TMS TDI TCK TDO NC VCCQ CY7C1367A/GVT71512C18 512Kx18 119-Ball BGA Top View A 1 2 3 4 5 6 7 VCCQ A A ADSP A A VCCQ B NC CE2 A ADSC A CE3 NC C NC A A VCC A A NC D DQb NC VSS NC VSS DQa NC E NC DQb VSS CE1 VSS NC DQa F VCCQ NC VSS OE VSS DQa VCCQ G NC DQb BWb ADV VSS NC DQa H DQb NC VSS GW VSS DQa NC J VCCQ VCC NC VCC NC VCC VCCQ K NC DQb VSS CLK VSS NC DQa L DQb NC VSS NC BWa DQa NC M VCCQ DQb VSS BWE VSS NC VCCQ N DQb NC VSS A1 VSS DQa NC P NC DQb VSS A0 VSS NC DQa R NC A MODE VCC NC A NC T NC A A NC A A ZZ U VCCQ TMS TDI TCK TDO NC VCCQ Document #: 38-05264 Rev. *A Page 4 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K × 36 Pin Descriptions X36 PBGA Pins X36 QFP Pins 4P 37 4N 36 2A, 3A, 5A, 6A, 3B, 35, 34, 33, 32, 5B, 6B, 2C, 3C, 5C, 100, 99, 82, 81, 6C, 2R, 6R, 3T, 4T, 44, 45, 46, 47, 48, 5T 49, 50 92 (T/AJ Version) 43 (TA/A Version) Name Type Description A0 A1 A InputAddresses: These inputs are registered and must meet the set Synchronous up and hold times around the rising edge of CLK. The burst counter generates internal addresses associated with A0 and A1, during burst cycle and wait cycle. 5L 5G 3G 3L 93 94 95 96 BWa BWb BWc BWd InputByte Write: A byte write is LOW for a WRITE cycle and HIGH for Synchronous a READ cycle. BWa controls DQa. BWb controls DQb. BWc controls DQc. BWd controls DQd. Data I/O are high impedance if either of these inputs are LOW, conditioned by BWE being LOW. 4M 87 BWE InputWrite Enable: This active LOW input gates byte write operations Synchronous and must meet the set-up and hold times around the rising edge of CLK. 4H 88 GW InputGlobal Write: This active LOW input allows a full 36-bit Write to Synchronous occur independent of the BWE and BWn lines and must meet the set-up and hold times around the rising edge of CLK. 4K 89 CLK InputClock: This signal registers the addresses, data, chip enables, Synchronous write control, and burst control inputs on its rising edge. All synchronous inputs must meet set up and hold times around the clock’s rising edge. 4E 98 CE1 InputChip Enable: This active LOW input is used to enable the device Synchronous and to gate ADSP. 2B 97 CE2 InputChip Enable: This active HIGH input is used to enable the Synchronous device. (not available for PBGA) 92 (for TA/A Version only) CE3 InputChip Enable: This active LOW input is used to enable the device. Synchronous Not available for B and T package versions. 4F 86 OE 4G 83 ADV InputAddress Advance: This active LOW input is used to control the Synchronous internal burst counter. A HIGH on this pin generates wait cycle (no address advance). 4A 84 ADSP InputAddress Status Processor: This active LOW input, along with Synchronous CE being LOW, causes a new external address to be registered and a READ cycle is initiated using the new address. 4B 85 ADSC InputAddress Status Controller: This active LOW input causes Synchronous device to be deselected or selected along with new external address to be registered. A Read or Write cycle is initiated depending upon write control inputs. 3R 31 MOD E 7T 64 ZZ (a) 6P, 7P, 7N, 6N, 6M, 6L, 7L, 6K, 7K, (b) 7H, 6H, 7G, 6G, 6F, 6E, 7E, 7D, 6D, (c) 2D, 1D, 1E, 2E, 2F, 1G, 2G, 1H, 2H, (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P (a) 51, 52, 53, 56, 57, 58, 59, 62, 63 (b) 68, 69, 72, 73, 74, 75, 78, 79, 80 (c) 1, 2, 3, 6, 7, 8, 9, 12, 13 (d) 18, 19, 22, 23, 24, 25, 28, 29, 30 DQa DQb DQc DQd Document #: 38-05264 Rev. *A Input InputStatic Output Enable: This active LOW asynchronous input enables the data output drivers. Mode: This input selects the burst sequence. A LOW on this pin selects Linear Burst. A NC or HIGH on this pin selects Interleaved Burst. InputSleep: This active HIGH input puts the device in low power Asynchronous consumption standby mode. For normal operation, this input has to be either LOW or NC (No Connect). Input/ Output Data Inputs/Outputs: First Byte is DQa. Second Byte is DQb. Third Byte is DQc. Fourth Byte is DQd. Input data must meet set-up and hold times around the rising edge of CLK. Page 5 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K × 36 Pin Descriptions (continued) X36 PBGA Pins X36 QFP Pins Name Type Description 2U 3U 4U 38 39 43 for BG/B and T/AJ version TMS TDI TCK Input IEEE 1149.1 Test Inputs: LVTTL-level inputs. Not available for TA/A package version. 5U 42 for BG/B and T/AJ version TDO Output Power IEEE 1149.1 Test Output: LVTTL-level output. Not available for TA/A package version. 4C, 2J, 4J, 6J, 4R 15, 41,65, 91 VCC Power Supply Core Power Supply: +3.3V –5% and +10% 3D, 5D, 3E, 5E, 3F, 5, 10, 17, 21, 26, 5F, 3H, 5H, 3K, 5K, 40, 55, 60, 67, 71, 3M, 5M, 3N, 5N, 3P, 76, 90 5P VSS 1A, 7A, 1F, 7F, 1J, 4, 11, 20, 27, 54, VCCQ 7J, 1M, 7M, 1U, 7U 61, 70, 77 1B, 7B, 1C, 7C, 4D, 3J, 5J, 4L, 1R, 5R, 7R, 1T, 2T, 6T, 6U 14, 16, 66 NC Ground I/O Power Supply – 38, 39, 42 for TA/A Version Ground: GND. Power supply for the circuitry. No Connect: These signals are not internally connected. User can leave it floating or connect it to VCC or VSS. 512K × 18 Pin Descriptions X18 PBGA Pins X18 QFP Pins 4P 37 4N 36 2A, 3A, 5A, 6A, 3B, 35, 34, 33, 32, 5B, 6B, 2C, 3C, 5C, 100, 99, 82, 81, 6C, 2R, 6R, 2T, 3T, 80, 48, 47, 46, 45, 5T, 6T 44, 49, 50 92 (T/AJ Version) 43 (TA/A Version) Name Type Description A0 A1 A InputAddresses: These inputs are registered and must meet the Synchronous set-up and hold times around the rising edge of CLK. The burst counter generates internal addresses associated with A0 and A1, during burst cycle and wait cycle. 5L 3G 93 94 BWa BWb InputByte Write Enables: A byte write enable is LOW for a WRITE Synchronous cycle and HIGH for a READ cycle. BWa controls DQa. BWb controls DQb. Data I/O are high impedance if either of these inputs are LOW, conditioned by BWE being LOW. 4M 87 BWE InputWrite Enable: This active LOW input gates byte write operaSynchronous tions and must meet the set up and hold times around the rising edge of CLK. 4H 88 GW InputGlobal Write: This active LOW input allows a full 18-bit WRITE Synchronous to occur independent of the BWE and WEn lines and must meet the set up and hold times around the rising edge of CLK. 4K 89 CLK InputClock: This signal registers the addresses, data, chip enables, Synchronous write control and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. 4E 98 CE1 InputChip Enable: This active LOW input is used to enable the Synchronous device and to gate ADSP. 2B 97 CE2 InputChip Enable: This active HIGH input is used to enable the Synchronous device. (not available for PBGA) 92 (for TA/A Version only) CE3 InputChip Enable: This active LOW input is used to enable the Synchronous device. Not available for B/BG and T/AJ package versions. 4F 86 OE Document #: 38-05264 Rev. *A Input Output Enable: This active LOW asynchronous input enables the data output drivers. Page 6 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 512K × 18 Pin Descriptions (continued) X18 PBGA Pins X18 QFP Pins Name 4G 83 ADV InputAddress Advance: This active LOW input is used to control Synchronous the internal burst counter. A HIGH on this pin generates wait cycle (no address advance). Type 4A 84 ADSP InputAddress Status Processor: This active LOW input, along with Synchronous CE being LOW, causes a new external address to be registered and a Read cycle is initiated using the new address. 4B 85 ADSC InputAddress Status Controller: This active LOW input causes Synchronous device to be deselected or selected along with new external address to be registered. A Read or Write cycle is initiated depending upon write control inputs. 3R 31 MODE 7T 64 ZZ (a) 6D, 7E, 6F, 7G, 6H, 7K, 6L, 6N, 7P (b) 1D, 2E, 2G, 1H, 2K, 1L, 2M, 1N, 2P (a) 58, 59, 62, 63, 68, 69, 72, 73, 74 (b) 8, 9, 12, 13, 18, 19, 22, 23, 24 DQa DQb Input/ Output Data Inputs/Outputs: Low Byte is DQa. High Byte is DQb. Input data must meet set up and hold times around the rising edge of CLK. 2U 3U 4U 38 39 43 for B/BG and T/AJ version TMS TDI TCK Input IEEE 1149.1 Test Inputs: LVTTL-level inputs. Not available for TA/A package version. 5U 42 for B/BG and T/AJ version TDO Power Output IEEE 1149.1 Test Output: LVTTL-level output. Not available for TA/A package version. 4C, 2J, 4J, 6J, 4R 15, 41,65, 91 VCC Power Supply Core Power Supply: +3.3V –5% and +10% InputStatic VSS Ground 1A, 7A, 1F, 7F, 1J, 4, 11, 20, 27, 54, 7J, 1M, 7M, 1U, 7U 61, 70, 77 VCCQ I/O Power Supply NC - 1-3, 6, 7, 14, 16, 25, 28-30, 51-53, 56, 57, 66, 75, 78, 79, 80, 95, 96 Mode: This input selects the burst sequence. A LOW on this pin selects Linear Burst. A NC or HIGH on this pin selects Interlinear Burst. InputSleep: This active HIGH input puts the device in low power Asynchronous consumption standby mode. For normal operation, this input has to be either LOW or NC (No Connect). 3D, 5D, 3E, 5E, 3F, 5, 10, 17, 21, 26, 5F, 5G, 3H, 5H, 3K, 40, 55, 60, 67, 71, 5K, 3L, 3M, 5M, 3N, 76, 90 5N, 3P, 5P 1B, 7B, 1C, 7C, 2D, 4D, 7D, 1E, 6E, 2F, 1G, 6G, 2H, 7H, 3J, 5J, 1K, 6K, 2L, 4L, 7L, 6M, 2N, 7N, 1P, 6P, 1R, 5R, 7R, 1T, 4T, 6U Description Ground: GND. Output Buffer Supply: +2.5V or +3.3V. No Connect: These signals are not internally connected. User can leave it floating or connect it to VCC or VSS. 38, 39, 42 for TA Version Document #: 38-05264 Rev. *A Page 7 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Introduction Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 4.5 ns (150-MHz device). The CY7C1366A/CY7C1367A supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium® and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWa,b,c,d for 1366B and BWa,b for 1367B) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Synchronous Chip Selects (CE1, CE2, CE3 for TQFP / CE1 for BGA) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) chip selects are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs is stored into the address advancement logic and the Address Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 4.5 ns (150-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. The CY7C1366B/CY7C1367B are double-cycle deselect parts. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately after the next clock rise. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) chip select is asserted active. The address presented is Document #: 38-05264 Rev. *A loaded into the address register and the address advancement logic while being delivered to the RAM core. The write signals (GW, BWE, and BWx) and ADV inputs are ignored during this first cycle. ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQx inputs is written into the corresponding address location in the RAM core. If GW is HIGH, then the write operation is controlled by BWE and BWx signals. The CY7C1366/CY7C1367A provides byte write capability that is described in the Write Cycle Description table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWa,b,c,d for CY7C1366 and BWa,b for CY7C1367A) input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the CY7C1366/CY7C1367A is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will three-state the output drivers. As a safety precaution, DQ are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) chip select is asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWx) are asserted active to conduct a write to the desired byte(s). ADSC triggered write accesses require a single clock cycle to complete. The address presented to A[17:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQ[x:0] is written into the corresponding address location in the RAM core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the CY7C1366/CY7C1367B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[x:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[x:0] are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1366/GVT71256C36 provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel® Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Page 8 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Truth Table[3, 4, 5, 6, 7, 8, 9] Operation Address Used CE CE2 CE2 ADSP ADSC ADV WRITE OE CLK DQ Deselected Cycle, Power-down None H X X X L X X X L-H High-Z Deselected Cycle, Power-down None L X L L X X X X L-H High-Z Deselected Cycle, Power-down None L H X L X X X X L-H High-Z Deselected Cycle, Power-down None L X L H L X X X L-H High-Z Deselected Cycle, Power-down None L H X H L X X X L-H High-Z READ Cycle, Begin Burst External L L H L X X X L L-H Q READ Cycle, Begin Burst External L L H L X X X H L-H High-Z WRITE Cycle, Begin Burst External L L H H L X L X L-H D READ Cycle, Begin Burst External L L H H L X H L L-H Q READ Cycle, Begin Burst External L L H H L X H H L-H High-Z READ Cycle, Continue Burst Next X X X H H L H L L-H Q READ Cycle, Continue Burst Next X X X H H L H H L-H High-Z READ Cycle, Continue Burst Next H X X X H L H L L-H Q READ Cycle, Continue Burst Next H X X X H L H H L-H High-Z WRITE Cycle, Continue Burst Next X X X H H L L X L-H D WRITE Cycle, Continue Burst Next H X X X H L L X L-H D READ Cycle, Suspend Burst Current X X X H H H H L L-H Q READ Cycle, Suspend Burst Current X X X H H H H H L-H High-Z READ Cycle, Suspend Burst Current H X X X H H H L L-H Q READ Cycle, Suspend Burst Current H X X X H H H H L-H High-Z WRITE Cycle, Suspend Burst Current X X X H H H L X L-H D WRITE Cycle, Suspend Burst Current H X X X H H L X L-H D Partial Truth Table for READ/WRITE[10] Function (1366) GW BWE BWa BWb BWc BWd Read 1 1 X X X X Read 1 0 1 1 1 1 Write Byte 0 – DQa 1 0 1 1 1 1 Write Byte 0 – DQb 1 0 1 1 0 1 Write Byte 1, 0 1 0 1 1 0 0 Write Byte 2 – DQc 1 0 1 0 1 1 Write Byte 2, 0 1 0 1 0 1 0 Write Byte 2, 1 1 0 1 0 0 1 Write Byte 2, 1, 0 1 0 1 0 0 0 Write Byte 3 – DQd 1 0 0 1 1 1 Notes: 3. X = “Don’t Care.” H = logic HIGH. L = logic LOW. For X36 product, WRITE = L means [BWE + BWa*BWb*BWc*BWd]*GW equals LOW. WRITE = H means [BWE + BWa*BWb*BWc*BWd]*GW equals HIGH. For X18 product, WRITE = L means [BWE + BWa*BWb]*GW equals LOW. WRITE = H means [BWE + BWa*BWb]*GW equals HIGH. 4. BWa enables write to DQa. BWb enables write to DQb. BWc enables write to DQc. BWd enables write to DQd. 5. All inputs except OE must meet set up and hold times around the rising edge (LOW to HIGH) of CLK. 6. Suspending burst generates wait cycle. 7. For a write operation following a read operation, OE must be HIGH before the input data required set-up time plus High-Z time for OE and staying HIGH throughout the input data hold time. 8. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 9. ADSP LOW along with chip being selected always initiates a Read cycle at the L-H edge of CLK. A WRITE cycle can be performed by setting WRITE LOW for the CLK L-H edge of the subsequent wait cycle. Refer to Write timing diagram for clarification. 10. For the X18 product, There are only BWa and BWb. Document #: 38-05264 Rev. *A Page 9 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Partial Truth Table for READ/WRITE[10] (continued) GW BWE BWa BWb BWc BWd Write Byte 3, 0 1 0 0 1 1 0 Write Byte 3, 1 1 0 0 1 0 1 Write Byte 3, 1, 0 1 0 0 1 0 0 Write Byte 3, 2 1 0 0 0 1 1 Write Byte 3, 2, 0 1 0 0 0 1 0 Write Byte 3, 2, 1 1 0 0 0 0 1 Write All Byte 1 0 0 0 0 0 Write All Byte 0 X X X X X Function (1366) Function (1367) Read Read GW BWE BWb BWa 1 1 X x 1 0 1 1 Write Byte 0 – DQ [7:0] and DP0 1 0 1 0 Write Byte 0 – DQ [15:8] and DP1 1 0 0 1 Write All Byte 1 0 0 0 Write All Byte 0 X X X Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two Clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guarantee. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode.CEs,ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ inputs returns LOW. ZZ Mode Electrical Characteristics Parameter Description Test Conditions IDDZZ Sleep mode stand-by current tZZS Device operation to ZZ ZZ > VDD – 0.2V tZZREC ZZ recovery time ZZ < 0.2V IEEE 1149.1 Serial Boundary Scan (JTAG) Overview This device incorporates a serial boundary scan access port (TAP). This port is designed to operate in a manner consistent with IEEE Standard 1149.1-1990 (commonly referred to as JTAG), but does not implement all of the functions required for IEEE 1149.1 compliance. Certain functions have been modified or eliminated because their implementation places extra delays in the critical speed path of the device. Nevertheless, the device supports the standard TAP controller architecture (the TAP controller is the state machine that controls the TAPs operation) and can be expected to function in a manner that does not conflict with the operation of devices with IEEE Standard 1149.1-compliant TAPs. The TAP operates using LVTTL/ LVCMOS logic level signaling. Document #: 38-05264 Rev. *A Min. ZZ > VDD – 0.2V 2 tcyc Max Unit 10 mA 2 tcyc ns ns Disabling the JTAG Feature It is possible to use this device without using the JTAG feature. To disable the TAP controller without interfering with normal operation of the device, TCK should be tied LOW (VSS) to prevent clocking the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be pulled up to VCC through a resistor. TDO should be left unconnected. Upon power-up the device will come up in a reset state which will not interfere with the operation of the device. Test Access Port (TAP) TCK – Test Clock (INPUT) Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. Page 10 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 TMS – Test Mode Select (INPUT) Bypass Register The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. It is allowable to leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. The bypass register is a single-bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the device TAP to another device in the scan chain with minimum delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. TDI – Test Data In (INPUT) The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction register see Figure 1. It is allowable to leave this pin unconnected if it is not used in an application. The pin is pulled up internally, resulting in a logic HIGH level. TDI is connected to the Most Significant Bit (MSB) of any register (see Figure 2). TDO – Test Data Out (OUTPUT) The TDO output pin is used to serially clock data-out from the registers. The output that is active depending on the state of the TAP state machine (refer to Figure 1, TAP Controller State Diagram). Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. TDO is connected to the Least Significant Bit (LSB) of any register (see Figure 2). Performing a TAP Reset The TAP circuitry does not have a reset pin (TRST, which is optional in the IEEE 1149.1 specification). A RESET can be performed for the TAP controller by forcing TMS HIGH (VCC) for five rising edges of TCK and pre-loads the instruction register with the IDCODE command. This type of reset does not affect the operation of the system logic. The reset affects test logic only. At power-up, the TAP is reset internally to ensure that TDO is in a High-Z state. Test Access Port (TAP) Registers Overview The various TAP registers are selected (one at a time) via the sequences of ones and zeros input to the TMS pin as the TCK is strobed. Each of the TAPs registers are serial shift registers that capture serial input data on the rising edge of TCK and push serial data out on subsequent falling edge of TCK. When a register is selected, it is connected between the TDI and TDO pins. Instruction Register The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run test/idle or the various data register states. The instructions are three bits long. The register can be loaded when it is placed between the TDI and TDO pins. The parallel outputs of the instruction register are automatically preloaded with the IDCODE instruction upon power-up or whenever the controller is placed in the test-logic reset state. When the TAP controller is in the Capture-IR state, the two least significant bits of the serial instruction register are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Document #: 38-05264 Rev. *A Boundary Scan Register The Boundary Scan register is connected to all the input and bidirectional I/O pins (not counting the TAP pins) on the device. This also includes a number of NC pins that are reserved for future needs. There are a total of 70 bits for x36 device and 51 bits for x18 device. The boundary scan register, under the control of the TAP controller, is loaded with the contents of the device I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE-Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order table describes the order in which the bits are connected. The first column defines the bit’s position in the boundary scan register. The MSB of the register is connected to TDI, and LSB is connected to TDO. The second column is the signal name, the third column is the TQFP pin number, and the fourth column is the BGA bump number. Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the device as described in the Identification Register Definitions table. TAP Controller Instruction Set Overview There are two classes of instructions defined in the IEEE Standard 1149.1-1990; the standard (public) instructions and device specific (private) instructions. Some public instructions are mandatory for IEEE 1149.1 compliance. Optional public instructions must be implemented in prescribed ways. Although the TAP controller in this device follows IEEE 1149.1 conventions, it is not IEEE 1149.1-compliant because some of the mandatory instructions are not fully implemented. The TAP on this device may be used to monitor all input and I/O pads, but can not be used to load address, data, or control signals into the device or to preload the I/O buffers. In other words, the device will not perform IEEE 1149.1 EXTEST, INTEST, or the preload portion of the SAMPLE/PRELOAD command. When the TAP controller is placed in Capture-IR state, the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction sets for this device are listed in the following tables. Page 11 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this device. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the device responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between two instructions. Unlike SAMPLE/PRELOAD instruction, EXTEST places the device outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in the instruction upon power-up and at any time the TAP controller is placed in the test-logic reset state. SAMPLE-Z If the High-Z instruction is loaded in the instruction register, all output pins are forced to a High-Z state and the boundary scan register is connected between TDI and TDO pins when the TAP controller is in a Shift-DR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is an IEEE 1149.1-mandatory instruction. The PRELOAD portion of the command is not implemented in this device, so the device TAP controller is not fully IEEE 1149.1-compliant. state, a snap shot of the data in the device’s input and I/O buffers is loaded into the boundary scan register. Because the device system clock(s) are independent from the TAP clock (TCK), it is possible for the TAP to attempt to capture the input and I/O ring contents while the buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results can not be expected. To guarantee that the boundary scan register will capture the correct value of a signal, the device input signals must be stabilized long enough to meet the TAP controller’s capture set up plus hold time (tCS plus tCH). The device clock input(s) need not be paused for any other TAP operation except capturing the input and I/O ring contents into the boundary scan register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. Because the PRELOAD portion of the command is not implemented in this device, moving the controller to the Update-DR state with the SAMPLE/PRELOAD instruction loaded in the instruction register has the same effect as the Pause-DR command. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP controller is in the Shift-DR state, the bypass register is placed between TDI and TDO. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Reserved Do not use these instructions. They are reserved for future use. When the SAMPLE/PRELOAD instruction is loaded in the instruction register and the TAP controller is in the Capture-DR Document #: 38-05264 Rev. *A Page 12 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 1 TEST-LOGIC RESET 0 0 REUN-TEST/ IDLE 1 1 1 SELECT DR-SCAN SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 SHIFT-DR 0 SHIFT-IR 1 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-DR 0 0 PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR 1 0 UPDATE-IR 1 0 Figure 1. TAP Controller State Diagram[11] Note: 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05264 Rev. *A Page 13 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 0 Bypass Register Selection Circuitry 2 TDI 1 0 1 0 1 0 Selection Circuitry TDO Instruction Register 31 30 29 . . 2 Identification Register x . . . . 2 Boundary Scan Register[12] TDI TAP Controller TDI Figure 2. TAP Controller Block Diagram TAP Electrical Characteristics Over the Operating Range Parameter VIH Description Test Conditions Input High (Logic 1) Voltage[13, 14] Voltage[13, 14] Min. Max. Unit 2.0 VCC + 0.3 V –0.3 0.8 V –5.0 5.0 µA VIl Input Low (Logic 0) ILI Input Leakage Current 0V < VIN < VCC ILI TMS and TDI Input Leakage Current 0V < VIN < VCC –30 30 µA ILO Output Leakage Current Output disabled, 0V < VIN < VCCQ –5.0 5.0 µA VOLC LVCMOS Output Low Voltage[13, 15] IOLC = 100 µA 0.2 V VOHC LVCMOS Output High Voltage[13, 15] IOHC = 100 µA VOLT LVTTL Output Low Voltage[13] VOHT Voltage[13] IOLT = 8.0 mA VCC – 0.2 V 0.4 V LVTTL Output High IOHT = 8.0 mA 2.4 V Notes: 12. X = 69 for the x36 configuration; X = 50 for the x18 configuration. 13. All voltage referenced to VSS (GND). 14. Overshoot: VIH(AC) < VCC+1.5V for t<tKHKH/2; undershoot: VIL(AC) < –0.5V for t < tKHKH/2; power-up: VIH < 3.6V and VCC < 3.135V and VCCQ < 1.4V for t < 200 ms. During normal operation, VCCQ must not exceed VCC. Control input signals (such as R/W, ADV/LD) may not have pulse widths less than tKHKL (min.). 15. This parameter is sampled. Document #: 38-05264 Rev. *A Page 14 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 TAP AC Switching Characteristics Over the Operating Range[16, 17] Parameter Description Min. Max Unit Clock tTHTH Clock Cycle Time 20 ns fTF Clock Frequency tTHTL Clock HIGH Time 8 ns tTLTH Clock LOW Time 8 ns tTLQX TCK LOW to TDO Unknown 0 tTLQV TCK LOW to TDO Valid tDVTH TDI Valid to TCK HIGH 5 ns tTHDX TCK HIGH to TDI Invalid 5 ns tMVTH TMS Set-up 5 ns tTDIS TDI Set-up 5 ns tCS Capture Set-up 5 ns tTHMX TMS Hold 5 ns tTDIH TDI Hold 5 ns tCH Capture Hold 5 ns 50 MHz Output Times ns 10 ns Set-up Times Hold Times TAP Timing and Test Conditions ALL INPUT PULSES TDO Z0 = 50Ω 50Ω 50 50Ω Ω 3.0V 20 pF 1.5V VSS Vt = 1.5V 1.5 ns 1.5 ns (b) (a) t tTHTH THTL t TLTH TEST CLOCK (TCK) tMVTH tTHMX tDVTH tTHDX TEST MODE SELECT (TMS) TEST DATA IN (TDI) tTLQV t TLQX TEST DATA OUT (TDO) Notes: 16. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 17. Test conditions are specified using the load in TAP AC Test Conditions. Document #: 38-05264 Rev. *A Page 15 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Identification Register Definitions Instruction Field 256K x 36 512K x 18 Revision Number (31:28) XXXX XXXX Reserved for revision number. Device Depth (27:23) 00110 00111 Defines depth of 256K or 512K words. Defines width of x36 or x18 bits. Device Width (22:18) Reserved (17:12) Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) 00100 00011 XXXXXX XXXXXX 00011100100 00011100100 1 1 Description Reserved for future use. Allows unique identification of DEVICE vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size (x36) Bit Size (x18) 3 3 Instruction Bypass 1 1 ID 32 32 Boundary Scan 70 51 Instruction Codes Code Description EXTEST Instruction 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all device outputs to High-Z state. This instruction is not IEEE 1149.1-compliant. IDCODE 001 Preloads ID register with vendor ID code and places it between TDI and TDO. This instruction does not affect device operations. SAMPLE-Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all device outputs to High-Z state. RESERVED 011 Do not use these instructions; they are reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This instruction does not affect device operations. This instruction does not implement IEEE 1149.1 PRELOAD function and is therefore not 1149.1-compliant. RESERVED 101 Do not use these instructions; they are reserved for future use. RESERVED 110 Do not use these instructions; they are reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This instruction does not affect device operations. Document #: 38-05264 Rev. *A Page 16 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Boundary Scan Order (256K × 36) (continued) Boundary Scan Order (256K × 36) Bit# Signal Name TQFP Bump ID Bit# Signal Name TQFP Bump ID DQc 1 2D 1 A 44 2R 45 2 A 45 3T 46 DQc 2 1E DQc 3 2F 3 A 46 4T 47 4 A 47 5T 48 DQc 6 1G DQc 7 2H 5 A 48 6R 49 6 A 49 3B 50 DQc 8 1D DQc 9 2E 7 A 50 5B 51 8 DQa 51 6P 52 DQc 12 2G DQc 13 1H 9 DQa 52 7N 53 10 DQa 53 6M 54 NC 14 5R DQd 18 2K 11 DQa 56 7L 55 12 DQa 57 6K 56 DQd 19 1L DQd 22 2M 13 DQa 58 7P 57 14 DQa 59 6N 58 DQd 23 1N DQd 24 2P 15 DQa 62 6L 59 16 DQa 63 7K 60 DQd 25 1K DQd 28 2L 17 ZZ 64 7T 61 18 DQb 68 6H 62 DQd 29 2N DQd 30 1P 19 DQb 69 7G 63 20 DQb 72 6F 64 MODE 31 3R A 32 2C 21 DQb 73 7E 65 22 DQb 74 6D 66 A 33 3C A 34 5C 23 DQb 75 7H 67 24 DQb 78 6G 68 A 35 6C A1 36 4N A0 37 4P 25 DQb 79 6E 69 26 DQb 80 7D 70 27 A 81 6A 28 A 82 5A 29 ADV 83 4G 30 ADSP 84 4A 31 ADSC 85 4B 32 OE 86 4F 33 BWE 87 4M 34 GW 88 4H 35 CLK 89 4K 36 A 92 6B 37 BWa 93 5L 38 BWb 94 5G 39 BWc 95 3G 40 BWd 96 3L 41 CE2 97 2B 42 CE1 98 4E 43 A 99 3A 44 A Document #: 38-05264 Rev. *A 100 2A Boundary Scan Order (512K × 18) Bit# Signal Name TQFP Bump ID 1 A 44 2R 2 A 45 2T 3 A 46 3T 4 A 47 5T 5 A 48 6R 6 A 49 3B 7 A 50 5B 8 DQa 58 7P 9 DQa 59 6N 10 DQa 62 6L 11 DQa 63 7K 12 ZZ 64 7T 13 DQa 68 6H 14 DQa 69 7G 15 DQa 72 6F Page 17 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Boundary Scan Order (512K × 18) (continued) Bit# Signal Name TQFP Bump ID 16 DQa 73 7E 17 DQa 74 6D 18 A 80 6T 19 A 81 6A 20 A 82 5A 21 ADV 83 4G 22 ADSP 84 4A 23 ADSC 85 4B 24 OE 86 4F 25 BWE 87 4M 26 GW 88 4H 27 CLK 89 4K 28 A 92 6B 29 BWa 93 5L 30 BWb 94 3G 31 CE2 97 2B 32 CE1 98 4E 33 A 99 3A 34 A 100 2A 35 DQb 8 1D 36 DQb 9 2E 37 DQb 12 2G 38 DQb 13 1H 39 NC 14 5R 40 DQb 18 2K 41 DQb 19 1L 42 DQb 22 2M 43 DQb 23 1N 44 DQb 24 2P 45 MODE 31 3R 46 A 32 2C 47 A 33 3C 48 A 34 5C 49 A 35 6C 50 A1 36 4N 51 A0 37 4P Document #: 38-05264 Rev. *A Page 18 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Voltage on VCC Supply Relative to VSS ......... –0.5V to +4.6V VIN ................................................................... –0.5V to 5.5V Short Circuit Output Current ........................................ 50 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA Operating Range Storage Temperature (plastic) ...................... –55°C to +150° Junction Temperature ..................................................+150° Power Dissipation .........................................................1.0W Range Ambient Temperature[18] 0°C to +70°C Com’l Ind’I –40°C to +85°C VCC VCCQ 3.3V –5%/+10% 2.5V-5%/3.3V +10% Electrical Characteristics Over the Operating Range Parameter VIH Description Input High (Logic 1) Voltage Test Conditions [13, 19] VIHD VIl Input Low (Logic 0) Voltage[13, 19] ILI Input Leakage Current MODE and ZZ Input Leakage ILO Output Leakage Current VOH VOL Output High Output Low Voltage[13] VCC Supply Voltage[13] VCCQ I/O Supply Voltage [13] Max. Unit All Other Inputs 2.0 5+0.5 V 3.3V I/O 2.0 V 2.5V I/O 1.7 3.3V I/O –0.3 0.8 V 2.5V –0.3 0.7 5 µA 30 µA 5 µA 0V < VIN < VCC IL Voltage[13] Min. Current[20] 0V < VIN < VCC – Output(s) disabled, 0V < VOUT < VCC IOH = –5.0 mA for 3.3V I/O 2.4 IOH = –1.0 mA for 2.5V I/O 2.0 V IOL = 8.0 mA for 3.3V I/O 0.4 IOL = 1.0 mA for 2.5V I/O 0.4 V 3.135 3.465 V 3.3V I/O 3.135 3.465 V 2.5V I/O 2.375 2.9 V Typ. –4.4 225 MHz ICC Power Supply Current: Operating[21, 22, 23] Device selected; all inputs < VIL or> VIH; cycle time > tKC min.; VCC = Max.; outputs open 150 570 510 425 380 mA ISB1 Automatic CE Power-down Current—TTL Inputs[22,23] Device deselected; all inputs < VIL or > VIH; VCC = Max.; CLK cycle time > tKC Min. 80 295 265 200 160 mA ISB2 CMOS Standby[22, 23] Device deselected; VCC = Max.; all inputs < VSS + 0.2 or >VCC – 0.2; all inputs static; CLK frequency = 0 5 10 10 10 10 mA ISB3 TTL Standby[22, 23] Device deselected; all inputs < VIL or > VIH; all inputs static; VCC = MAX; CLK frequency = 0 15 30 30 30 30 mA ISB4 Clock Running[22, 23] Device deselected; VCC = Max.; all inputs < VSS + 0.2 or >VCC – 0.2; CLK cycle time > tKC Min. 40 125 110 90 80 mA Parameter Description Conditions –5 200 MHz –6 166 MHz –6.7 150 MHz Unit Notes: 18. TA is the case temperature. 19. Overshoot: VIH < +6.0V for t < tKC /2. Undershoot:VIL < –2.0V for t < tKC /2. 20. Output loading is specified with CL=5 pF as in AC Test Loads. 21. ICC is given with no output current. ICC increases with greater output loading and faster cycle times. 22. “Device Deselected” means the device is in power-down mode as defined in the truth table. “Device Selected” means the device is active. 23. Typical values are measured at 3.3V, 25°C, and 20 ns cycle time. Document #: 38-05264 Rev. *A Page 19 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Capacitance[15] Parameter Description CI Test Conditions Typ. Max. Unit 5 7 pF 7 8 pF Input Capacitance TA = 25°C, f = 1 MHz, Input/Output Capacitance (DQ) VCC = 3.3V CI/O Thermal Resistance Parameter ΘJA ΘJC Description Test Conditions TQFP Typ. Unit 25 °C/W 9 °C/W Thermal Resistance (Junction to Ambient) Still Air, soldered on a 4.25 x 1.125 inch, 4-layer PCB Thermal Resistance (Junction to Case) AC Test Loads and Waveforms 317Ω VCCQ DQ Z0 =50Ω 351Ω 0V ≤ 1.0 ns ≤ 1.0 ns Vt = 1.5V (a) (c) (b) Switching Characteristics Over the Operating 90% 10% 90% 10% 50Ω 5 pF Range[24] -4.4 225 MHz Parameter ALL INPUT PULSES VCCQ DQ Description Min. Max. -5 200 MHz Min. Max. -6 166 MHz Min. Max. -6.7 150 MHz Min. Max. Unit Clock tKC Clock Cycle Time 4.4 5.0 6.0 6.7 ns tKH Clock HIGH Time 1.7 2.0 2.4 2.6 ns tKL Clock LOW Time 1.7 2.0 2.4 2.6 ns Output Times tKQ Clock to Output Valid VCCQ = 3.3V 2.8 3.0 3.5 3.5 ns VCCQ = 2.5V 2.8 3.5 4.0 4.5 ns tKQX Clock to Output Invalid tKQLZ Clock to Output in Low-Z[15, 25, 26] tKQHZ Clock to Output in High-Z [15, 25, 26] tOEQ OE to Output Valid[27] tOELZ OE to Output in Low-Z[15, 25, 26] tOEHZ High-Z[15, 25, 26] 1.25 1.25 1.25 1.25 ns 0 0 0 0 ns 1.25 VCCQ = 3.3V 1.25 2.8 VCCQ = 2.5V OE to Output in 3.0 1.25 3.0 2.8 0 3.0 2.5 1.25 3.5 3.5 0 4.0 4.0 0 3.0 4.0 ns 3.5 ns 4.5 ns ns 0 3.5 3.5 ns Set-up Times tS Address, Controls, and Data In[28] 1.5 1.5 1.5 2.0 ns Address, Controls, and Data In[28] 0.5 0.5 0.5 0.5 ns Hold Times tH Notes: 24. Test conditions as specified with the output loading as shown in part (a) of AC Test Loads unless otherwise noted. 25. Output loading is specified with CL = 5 pF as in (a) of AC Test Loads. 26. At any given temperature and voltage condition, tKQHZ is less than tKQLZ and tOEHZ is less than tOELZ. 27. OE is a “Don’t Care” when a byte write enable is sampled LOW. 28. This is a synchronous device. All synchronous inputs must meet specified setup and hold time, except for “Don’t Care” as defined in the truth table. Document #: 38-05264 Rev. *A Page 20 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Typical Output Buffer Characteristics Output High Voltage Pull-up Current Output Low Voltage Pull-down Current VOH(V) IOH(mA) Min. IOH(mA) Max. VOL(V) IOL(mA) Min. IOL(mA) Max. –0.5 –38 –105 –0.5 0 0 0 –38 –105 0 0 0 0.8 –38 –105 0.4 10 20 1.25 –26 –83 0.8 20 40 1.5 –20 –70 1.25 31 63 2.3 0 –30 1.6 40 80 2.7 0 –10 2.8 40 80 2.9 0 0 3.2 40 80 3.4 0 0 3.4 40 80 Switching Waveforms Read Timing[29, 30] tKC tKL CLK CLK tKH tS ADSP# ADSP tH ADSC# ADSC tS A ADDRESS BWa#,BW BWb#, x BWc#,BWE BWd# BWE#, GW# A1 A2 tH tS GW CECE# tS ADV ADV# tH OE# OE tKQ DQx DQ tKQLZ tOELZ Q(A1) SINGLE READ tOEQ tKQ Q(A2) Q(A2+1) Q(A2+2) Q(A2+3) Q(A2) Q(A2+1) BURST READ Notes: 29. CE active in this timing diagram means that all chip enables CE, CE2, and CE2 are active. CE2 is only available for TA package version. 30. For the X18 product, there are only BWa and BWb for byte write control. Document #: 38-05264 Rev. *A Page 21 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Switching Waveforms (continued) Write Timing[29, 30] CLK CLK tS ADSP# ADSP tH ADSC# ADSC tS A1 ADDRESS A A2 A3 tH BWa#, BWb#, x BWc#, BW BWd#, BWE# BWE GW# GW CE# CE tS ADV# ADV tH OE# OE tKQX DQ DQx Q tOEHZ D(A1) SINGLE WRITE Document #: 38-05264 Rev. *A D(A2) D(A2+1) D(A2+1) D(A2+2) BURST WRITE D(A2+3) D(A3) D(A3+1) D(A3+2) BURST WRITE Page 22 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Switching Waveforms (continued) Read/Write Timing[29, 30] CLK CLK tS ADSP ADSP# tH ADSC ADSC# tS A ADDRESS A1 x BWa#, BW BWb#, BWc#, BWE BWd#, BWE#, GW# GW A2 A3 A4 A5 tH CE# CE ADV ADV# OE OE# DQx DQ Q(A1) Single Reads Document #: 38-05264 Rev. *A Q(A2) D(A3) Single Write Q(A4) Q(A4+1) Burst Read Q(A4+2) D(A5) D(A5+1) Burst Write Page 23 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Switching Waveforms (continued) ZZ Mode Timing [31, 32] CLK CE1 CE2 LOW HIGH CE3 ZZ IDD tZZS IDD(active) IDDZZ tZZREC I/Os Three-state 31. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 32. I/Os are in three-state when exiting ZZ sleep mode. Document #: 38-05264 Rev. *A Page 24 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Ordering Information Speed (MHz) 225 200 166 150 225 200 166 150 Package Name Package Type CY7C1366A-225AJC/ GVT71256C36T-4.4 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-225AC/ GVT71256C36TA-4.4 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-225BGC/ GVT71256C36B-4.4 BG119 CY7C1366A-200AJC/ GVT71256C36T-5 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-200AC/ GVT71256C36TA-5 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack Ordering Code Commercial Commercial 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1366A-200BGC/ GVT71256C36B-5 BG119 CY7C1366A-166AJC/ GVT71256C36T-6 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-166AC/ GVT71256C36TA-6 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1366A-166BGC/ GVT71256C36B-6 BG119 CY7C1366A-150AJC/ GVT71256C36T-6.7 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-150AC/ GVT71256C36TA-6.7 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-150BGC/ GVT71256C36B-6.7 BG119 CY7C1367A-225AJC/ GVT71512C18T-4.4 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-225AC/ GVT71512C18TA-4.4 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-225BGC/ GVT71512C18B-4.4 BG119 CY7C1367A-200AJC/ GVT71512C18T-5 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-200AC/ GVT71512C18TA-5 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-Lead BGA (14 x 22 x 2.4 mm) 119-Lead BGA (14 x 22 x 2.4 mm) 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1367A-200BGC/ GVT715152C18B-5 BG119 CY7C1367A-166AJC/ GVT715152C18T-6 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-166AC/ GVT71512C18TA-6 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1367A-166BGC/ GVT71512C18B-6 BG119 CY7C1367A-150AJC/ GVT71512C18T-6.7 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-150AC/ GVT71512C18TA-6.7 A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-150BGC/ GVT71512C18B-6.7 BG119 Document #: 38-05264 Rev. *A Operating Range 119-Lead BGA (14 x 22 x 2.4 mm) 119-Lead BGA (14 x 22 x 2.4 mm) Page 25 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Ordering Information (continued) Speed (MHz) 200 166 150 200 166 150 Ordering Code Package Name Package Type Operating Range CY7C1366A-200AJCI/ GVT71256C36T-5I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack Industrial temp CY7C1366A-200ACI/ GVT71256C36TA-5I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-200BGCI/ GVT71256C36B-5I BG119 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1366A-166AJCI/ GVT71256C36T-6I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-166ACI/ GVT71256C36TA-6I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-166BGCI/ GVT71256C36B-6I BG119 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1366A-150AJCI/ GVT71256C36T-6.7I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-150ACI/ GVT71256C36TA-6.7I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1366A-150BGCI/ GVT71256C36B-6.7I BG119 CY7C1367A-200AJCI/ GVT71512C18T-5I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-200ACI/ GVT71512C18TA-5I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1367A-200BGCI/ GVT715152C18B-5I BG119 119-Lead BGA (14 x 22 x 2.4 mm) CY7C1367A-166AJCI/ GVT715152C18T-6I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-166ACI/ GVT71512C18TA-6I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-166BGCI/ GVT71512C18B-6I BG119 CY7C1367A-150AJC/ GVT71512C18T-6.7I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-150ACI/ GVT71512C18TA-6.7I A101 100-Lead 14 x 20 x 1.4 mm Thin Quad Flat Pack CY7C1367A-150BGCI/ GVT71512C18B-6.7I BG119 Document #: 38-05264 Rev. *A 119-Lead BGA (14 x 22 x 2.4 mm) 119-Lead BGA (14 x 22 x 2.4 mm) Page 26 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 51-85050-*A Document #: 38-05264 Rev. *A Page 27 of 29 CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Package Diagrams (continued) 119-Lead PBGA (14 x 22 x 2.4 mm) BG119 51-85115-*B Pentium is a registered trademark, and i486 is a trademark, of Intel Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05264 Rev. *A Page 28 of 29 © Cypress Semiconductor Corporation, 2003. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 Document History Page Document Title: CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Synchronous Pipelined SRAM Document Number: 38-05264 REV. ECN No. Issue Date Orig. of Change ** 114117 04/26/02 KKV New Data Sheet ** 125245 03/19/03 IXR Changed tKQ, tKQX, tKQLZ, tKHZ, tOEQ, tOELZ, tOEHZ. Document #: 38-05264 Rev. *A Description of Change Page 29 of 29