DGS 3-01AS Advanced Technical Information IFAV = 12 A VRRM = 100 V CJunction = 19 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A TO-252 AA on product DGS 3-01AS A 3A010AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV TC = 25°C; DC 12 A Features ● ● IFAV TC = 90°C; DC 8.5 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz); sine 10 A TVJ -55...+175 °C Tstg -55...+150 °C 18 W ● ● ● ● Ptot TC = 25°C ● Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications ● Symbol Conditions Characteristic Values typ. IR ① VF CJ VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C 0.7 IF = 2 A; IF = 2 A; TVJ = 125°C TVJ = 25°C 0.54 0.62 VR = 50 V; TVJ = 125°C 19 0.7 RthJC Weight max. 0.8 ● mA mA ● V V pF 8.5 0.3 ● MHz switched mode power supplies (SMPS) Small size SMPs High frequency converters Resonant converters K/W g IXYS reserve the right to change limits, conditions and dimensions. © 2002 IXYS All rights reserved 238 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to DIN/IEC 747 and per diode unless otherwise specified 1-2 DGS 3-01AS Advanced Technical Information 200 30 TO-252 AA pF 10 A TVJ = 125°C IF tbd 1 TVJ = 125°C 25°C 100 CJ 0,1 1 Anode 2 NC 3 Anode 4 Cathode 0,01 0,0 0,5 1,0 1,5 10 0,1 2,0 2,5 V 3,0 VF Fig. 1typ. forward characteristics 1 10 100 V 1000 VR Fig. 2 typ. junction capacity versus blocking voltage Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 10 K/W 1 ZthJC Single Pulse 0,1 0,01 Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 DGS 3-01AS 0,00001 0,0001 0,001 0,01 0,1 1 s 10 t Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak IXYS reserve the right to change limits, conditions and dimensions. © 2002 IXYS All rights reserved 238 Rectifier Diode conduction by majority + minority carriers forward characteristics VF (IF) turn off characteristics extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) turn on characteristics delayed saturation leads to VFR 2-2