UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The UTC 15N70 is suitable for high efficiency switching DC/DC converter, motor control and switch mode power supply. FEATURES * RDS(ON)=0.43Ω @VGS=10V,ID=7.5A * Low gate charge ( Typ=70nC ) * Low CRSS ( Typ=27pF ) * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N70L-T3P-T 15N70G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-3P 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-839.a 15N70 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Pulsed (Note 2) Continuous Avalanche Current (Note 2) ID IDM IAR EAS EAR dv/dt RATINGS 700 ±30 15 9.5 60 15 950 30 4.5 300 2.38 -55~+150 -55~+150 UNIT V V A A A A mJ mJ V/ns W W/°C °C °C Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) Power Dissipation (TC=25°C) PD Derate above 25°C Junction Temperature TJ Storage Temperature Range TSTG Maximum Lead Temperature for Soldering Purposes, 1/8” TL 300 °C from Case for 5 Seconds Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. L=7.8mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°C, 4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤25°C. Avalanche Energy THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case Case to Sink SYMBOL θJA θJC θCS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 40 0.42 0.24 UNIT °C/W °C/W °C/W 2 of 6 Ver.a 15N70 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V 700 IGSS UNISONIC TECHNOLOGIES CO., LTD V 0.68 VDS=700V, VGS=0V VDS=560V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A Forward Transconductance gFS VDS=50V, ID=7.5A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=560V, ID=15A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=350V, ID=15A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=15A, VGS=0V Body Diode Reverse Recovery Time tRR IS=15A, VGS=0V, dIF/dt=100A/µs (Note1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2% 2. Essentially independent of operating temperature www.unisonic.com.tw MIN TYP MAX UNIT △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS Forward Reverse TEST CONDITIONS 3.0 V/°C 10 100 +100 -100 µA µA nA nA 5.0 0.43 0.56 15 V Ω S 2790 3600 pF 300 390 pF 27 35 pF 70 17 33 70 180 160 120 90 150 370 330 250 15 60 1.4 460 5.7 nC nC nC ns ns ns ns A A V ns µC 3 of 6 QW-R502-839.a 15N70 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-839.a 15N70 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-839.a 15N70 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-839.a