A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 36mΩ @ VGS= 10V 12.2A 61mΩ @ VGS= 4.5V 9.4A • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability 40V Mechanical Data • Case: TO252-3L Description and Applications • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate) • Backlighting • DC-DC Converters • Power management functions D D TO252-3L G D G TOP VIEW Ordering Information PIN OUT -TOP VIEW Equivalent Circuit (Note 1) Product DMN4036LK3-13 Note: S S Marking N4036L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N4036L DMN4036LK3 Document number: DS32122 Rev. 2 - 2 = Manufacturer’s Marking N4036L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS ID IDM IS ISM Value 40 ±20 12.2 9.7 8.5 31.7 10.4 31.7 Unit V V A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 3) Power dissipation Linear derating factor (Note 4) PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 3) (Note 4) (Note 6) (Note 7) RθJA RθJL TJ, TSTG Value 4.12 33 8.49 67.9 2.12 16.9 30.3 14.7 59.0 3.1 -55 to 150 Unit W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note 3, except the device is measured at t ≤ 10 sec. 5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN4036LK3 Document number: DS32122 Rev. 2 - 2 2 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Thermal Characteristics 10 RDS(on) Limited 1 ID Drain Current (A) ID Drain Current (A) RDS(on) DC 1s 100ms 10ms Tamb=25°C 100m 100µs 1 DC 1 1s 100ms 10ms T amb=25°C 100m 1ms 25mm x 25mm 1oz FR4 10 Limited 1ms 50mm x 50mm 2oz FR4 10 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 35 60 Transient Thermal Impedance T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 D=0.1 D=0.2 10 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMN4036LK3 Document number: DS32122 Rev. 2 - 2 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS (ON) ⎯ gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = 250μA, VDS = VGS VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A VDS = 15V, ID = 12A IS = 12A, VGS = 0V ⎯ 3.0 0.036 0.061 ⎯ 1.1 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 8) ⎯ 0.026 0.049 19.6 0.96 112 926 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 453 79.1 40.5 4.9 9.2 1.7 2.7 3.2 11.7 11.6 9.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) Notes: Ω Test Condition IS = 12A, di/dt = 100A/μs VDS = 20V, VGS = 0V f = 1MHz VGS = 4.5V VGS = 10V VDS = 20V ID = 12A VDD = 20V, VGS = 10V ID = 12A, RG ≅ 6.0Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. DMN4036LK3 Document number: DS32122 Rev. 2 - 2 4 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Typical Characteristics 10V T = 150°C 4.5V 10 10V 4V ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 3V 0.1 VGS 0.01 10 3.5V 3V 1 2.5V 0.1 2V VGS 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 4 5 VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics 10 3V T = 25°C 3.5V VGS 4V 1 4.5V 0.1 10V 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN4036LK3 Document number: DS32122 Rev. 2 - 2 VGS = 10V 1.4 ID = 12A RDS(on) 1.2 1.0 0.8 0.6 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Typical Characteristics - continued C Capacitance (pF) VGS = 0V f = 1MHz 500 CISS 400 COSS 300 CRSS 200 100 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 600 8 6 4 VDS = 20V 2 0 ID = 12A 0 2 4 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN4036LK3 Document number: DS32122 Rev. 2 - 2 Switching time test circuit 6 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC 0.090 BSC Max 2.29 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN4036LK3 Document number: DS32122 Rev. 2 - 2 7 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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