ROHM DTD743XE_11

200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD743XE / DTD743XM
Dimensions (Unit : mm)
Applications
Inverter, Interface, Driver
DTD743XE
(2)
1.6
0.8
(3)
0.2
0.1Min.
(1)
0.2
0.15
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M43
DTD743XM
0.2
1.2
0.32
0.8
1.2
(3)
(1)(2)
0.2
0.22
0.4 0.4
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
(1) IN
(2) GND
(3) OUT
0.13
0.5
0.8
VMT3
Each lead has same dimensions
Abbreviated symbol : M43
Absolute maximum ratings (Ta=25C)
Packaging specifications
Limits
Symbol
0.55
0.3
Feature
1) VCE(sat) is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Parameter
0.7
1.6
DTD743XE DTD743XM
Unit
Supply voltage
VCC
30
V
Input voltage
VIN
−7 to +20
V
Package
EMT3
VMT3
Packaging type
Taping
Taping
TL
T2L
3000
8000
Code
Basic ordering
unit (pieces)
Collector current
∗1
IC (max)
200
mA
Power dissipation
∗2
PD
150
mW
Junction temperature
Tj
150
C
DTD743XE
Storage temperature
Tstg
−55 to +150
C
DTD743XM
Part No.
−
−
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Equivalent circuit
Min.
Typ.
Max.
Unit
Conditions
VI(off)
−
−
0.3
VI(on)
2.5
−
−
VO(on)
−
70
300
mV
IO/II= 50mA / 2.5mA
II
−
−
1.4
mA
VI= 5V
IO(off)
−
−
500
nA
VCC= 30V, VI=0V
DC current gain
GI
140
−
−
−
Transition frequency ∗
fT
−
260
−
MHz
VCE= 10V, IE= −5mA, f=100MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
−
Resistance ratio
R2/R1
1.7
2.1
2.6
−
−
Input voltage
Output voltage
Input current
Output current
V
VCC= 5V, IO= 100μA
VO= 0.3V, IO= 20mA
R2
GND
VO= 2V, IO= 100mA
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OUT
IN
GND
R1=4.7kΩ / R2=10kΩ
∗ Characteristics of built-in transistor.
c 2011 ROHM Co., Ltd. All rights reserved.
○
OUT
R1
IN
1/2
2011.11 - Rev.B
DTD743XE / DTD743XM
Data Sheet
Electrical characteristics curves
II=0.9mA
160
II=0.7mA
II=0.8mA
II=0.6mA
120
II=0.5mA
II=0.4mA
80
II=0.3mA
40
VO=0.3V
10
Ta=125ºC
75ºC
25ºC
-40ºC
1
II=0.2mA
0
0
1
2
3
4
5
0.1
II=0.1mA
II=0.A
0.1
10
1
1
100
1000
Ta=125ºC
75ºC
25ºC
-40ºC
10
1
0.1
0
0.5
1
1.5
2
INPUT VOLTAGE : VI(off) (V)
Fig 3. Output Currentvs. Input Voltage
(OFF Characteristics)
IO/II=20/1
100
0.1
10
Fig 2. Input Voltage vs. Output Current
(ON Characteristics)
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
VO=5V Ta=125ºC
75ºC
25ºC
-40ºC
1
OUTPUT CURRENT : IO (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 1. Output Current vs. Output Voltage
1000
VO=5V
OUTPUT CURRENT : IO (mA)
200
100
100
II=1.0mA
Ta=25ºC
INPUT VOLTAGE : VI(on) (V)
COLLECTOR CURRENT : IC (mA)
240
10
100
1000
OUTPUT CURRENT : IO (mA)
Fig4. DC Current Gain vs. Output Current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
Ta=125ºC
75ºC
25ºC
-40ºC
0.1
0.01
1
10
100
1000
OUTPUT CURRENT : IO (mA)
Fig 5. Output Voltage vs. Output Current
2/2
2011.11 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A