DZ5X068D Silicon epitaxial planar type Unit: mm For surge absorption circuits Features Excellent rising characteristics of zener current IZ Low zener operating resistance RZ Halogen-free / RoHs compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 02 Basic Part Number Dual DZ3X068D (Common anode) Packaging DZ5X068D0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Total power dissipation *1 PT 200 mW Electrostatic discharge *2 ESD ±10 kV Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 1: Cathode -1 2: Anode-1, 2, 3, 4 3: Cathode -2 Panasonic JEITA Code 4: Cathode -3 5: Cathode -4 Mini5-G3-B SC-74A MO-178 5 Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)(4 diode total) Solder in (0.7 mm × 1.0 mm) *2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times) 1 4 2 3 Common Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit 1.0 V 7.14 V Forward voltage VF IF = 10 mA Zener voltage *1,2 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA 30 W Zener rise operating resistance RZK IZ = 0.5 mA 60 W Reverse current IR VR = 4.0 V 0.1 µA Temparature coefficient of zener voltage *3 SZ IZ = 5 mA 6.46 3.1 mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C) * 2 : VZ guaranteed 20 ms after current flow. *3: Tj = 25°C to 150°C Publication date: July 2012 Ver. BED 1 DZ5X068D DZ5X068D_IZ-VZ DZ5X068D_IF-VF IF VF 102 Ta = 25°C 10−1 10−2 1 10−1 10−2 0 0.5 1.0 1.5 2.0 Forward voltage VF (V) 10−3 0 DZ5X068D_RZ-IZ 1 10 102 5 4 3 2 Total power dissipation PT (mW) Thermal resistance Rth (°C/W) 40 80 120 160 Ambient temperature Ta (°C) 2 200 5 6 30 20 10 1 0 0 2 4 6 8 Zener current IZ (mA) 0 10 0 (2) 102 10 (1) Non-heat sink (2) Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) Solder in : 0.7 mm × 1.0 mm 10−1 10 Time t (s) Ver. BED 2 3 4 5 PZSM tW Rth(j-l) = 120°C/W 1 10−3 1 Reverse voltage VR (V) DZ5X__PZSM-tW (1) 50 4 Ta = 25°C 103 100 3 Ct VR Rth t 150 2 DZ5X068D_Ct-VR DZ5X__Rth-t Mounted on glass epoxy print board. (4 diode total) (45 mm × 45 mm × 1 mm) Solder in : 0.7 mm × 1.0 mm 1 Reverse voltage VR (V) 6 PT Ta 0 0 40 DZ5X__ PT-Ta 200 10−11 7 Zener current IZ (mA) 250 Zener voltage VZ (V) 12 Terminal capacitance Ct (pF) Zener operating resistance RZ (Ω) Ta = 25°C 1 10−1 8 10−9 SZ IZ Temparature coefficient of zener voltage SZ (mV/°C) 10 4 10−7 DZ5X068D_SZ-IZ RZ IZ 0 Ta = 25°C 10−5 Reverse current IR (mA) 1 10−3 Ta = 25°C 10 Zener current IZ (mA) Forward current IF (mA) 10 IR VR 103 Non-repetitive reverse surge power dissipation PZSM (W) 102 DZ5X068D_IR-VR IZ VZ 102 Ta = 25°C 10 1 10−1 2 10 103 Pulse width tW (µs) 104 DZ5X068D Mini5-G3-B (0.65) 0.30 Unit: mm +0.10 −0.05 5 0.13 +0.05 −0.02 1 2 (0.95) (0.95) 0.4 ±0.2 6° 2.8 +0.2 −0.3 1.50 +0.25 −0.05 4 3 1.9 ±0.1 2.90 +0.20 −0.05 1.1 +0.3 −0.1 0 to 0.1 1.1 +0.2 −0.1 8° Land Pattern (Reference) (Unit: mm) Ver. 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Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202