DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor ED1502 FEATURES PINNING • Low current (max. 25 mA) PIN DESCRIPTION • Low voltage (max. 20 V) 1 emitter • High gain. 2 base 3 collector APPLICATIONS • General purpose switching and amplification. handbook, halfpage1 DESCRIPTION 3 2 3 2 NPN transistor in a plastic TO-92; SOT54 package. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 25 mA ICM peak collector current − 25 mA IBM peak base current − 25 mA Ptot total power dissipation − 500 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Refer to TO-92; SOT54 standard mounting conditions. 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistor ED1502 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Refer to TO-92; SOT54 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = 40 V MIN. − TYP. − MAX. 10 UNIT µA ICBO collector cut-off current IE = 0; VCB = 20 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 10 µA hFE DC current gain IC = 7 mA; VCE = 10 V ED1502B 48 − 75 ED1502C 66 − 100 ED1502D 84 − 127 ED1502E 105 − 210 VBE base-emitter voltage IC = 7 mA; VCE = 10 V; note 1 − − 925 mV Cre feedback capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 361 − 825 MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 27 3 Philips Semiconductors Product specification NPN general purpose transistor ED1502 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 27 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistor ED1502 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 27 5 Philips Semiconductors Product specification NPN general purpose transistor ED1502 NOTES 1999 Apr 27 6 Philips Semiconductors Product specification NPN general purpose transistor ED1502 NOTES 1999 Apr 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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