NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM512D16
Advance Information
EM512D16
512Kx16 bit Ultra-Low Power Asynchronous Static RAM
Overview
Features
The EM512D16 is an integrated memory device
containing a low power 8 Mbit Static Random
Access Memory organized as 524,288 words by 16
bits. The base design is the same as NanoAmp’s
standard low voltage version, EM512W16. The
device is fabricated using NanoAmp’s advanced
CMOS process and high-speed/ultra low-power/
low-voltage circuit technology. The device pinout is
compatible with other standard 512K x 16 SRAMs.
The device is designed such that a creative user
can improve system power and performance
parameters through use of it’s unique page mode
operation.
•
FIGURE 1: Pin Configuration
4
5
•
•
ISB < 2 uA @ 55 o C
16 Word Fast Page-Mode Operation
48-Pin BGA or Known Good Die available
•
•
•
TABLE 1: Pin Descriptions
1
2
A
LB
OE
A0
A1
A2
CE2
B
I/O 8
UB
A3
A4
CE1
I/O 0
C
I/O 9
I/O 10
A5
A6
I/O 1
I/O 2
VS S
D
3
•
Dual Voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.7 to 2.2 Volts
Extended Temperature Range:
-40 to +85 oC
Fast Cycle Time:
Random Access < 70 ns
Page Mode < 25 ns
Very Low Operating Current:
ICC < 5 mA typical at 2V, 10 Mhz
Very Low Standby Current:
6
I/O 11
A 17
A7
I/O 3
VCC
E
VCCQ I/O 12
NC
A 16
I/O 4
VS S
F
I/O 14
I/O 13
A 14
A 15
I/O 5
I/O 6
G
I/O 15
NC
A 12
A 13
WE
I/O 7
H
A 18
A8
A9
A 10
A 11
NC
Pin Name
48 Pin BGA (top)
Pin Function
A 0 -A 18
WE
CE1, CE2
OE
UB
LB
I/O0 -I/O 15
V CC
Address Inputs
Write Enable Input
Chip Enable Inputs
Output Enable Input
Upper Byte Enable Input
Lower Byte Enable Input
Data Inputs/Outputs
Power
V CCQ
V SS
NC
Power I/O pins only
Ground
Not Connected
FIGURE 1: Typical Operating Envelope (Serial R/W Mix)
12.5
Typical ICC
(mA)
10.0
7.5
2.0 Volts
5.0
2.5
0.0
0
2.5
5.0
7.5
10.0
12.5
15.0
Operating Frequency (Mhz)
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
1
EM512D16
NanoAmp Solutions, Inc.
Advance Information
FIGURE 3: Functional Block Diagram
Word
Address
Decode
Logic
Address
Inputs
A0 - A 3
Page
Address
Decode
Logic
Address
Inputs
A4 - A18
W
o
r
d
32K Page
x 16 Word
Input/
Output
Mux
and
Buffers
M
u
x
x 16 bit
RAM Array
I/O 0 - I/O7
I/O 8 - I/O15
CE1
CE2
WE
OE
UB
LB
Control
Logic
TABLE 2: Functional Description
CE1
CE2
WE
OE
UB
LB
I/O 0 - I/O 15 1
MODE
POWER
H
X
X
X
X
X
High Z
Standby2
Standby
X
L
X
X
X
X
High Z
Standby2
Standby
X
X
X
X
H
H
High Z
Standby2
Standby
L
H
L
X3
L1
L1
Data In
Write 3
Active
L
H
H
L
L
1
1
Data Out
Read
Active
L
H
H
H
L
1
1
High Z
Active
Active
L
L
1. When UB and LB are in select mode (low), I/O 0 - I/O 15 are affected as shown. When LB only is in the select mode only I/O 0 - IO7
are affected as shown. When UB is in the select mode only I/O 8 - I/O 15 are affected as shown. If both UB and LB are in the deselect mode (high), the chip is in a standby mode.
2. When the device is in standby mode, control inputs (WE, O E, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
TABLE 3: Capacitance*
Item
Symbol
Test Condition
Input Capacitance
CIN
I/O Capacitance
CI/O
Min
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
Note: These parameters are verified in device characterization and are not 100% tested
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
2
EM512D16
NanoAmp Solutions, Inc.
Advance Information
TABLE 4: Absolute Maximum Ratings*
Item
Symbol
Rating
Unit
VIN,OUT
–0.3 to VCC +0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 3.0
V
Storage Temperature
T STG
–40 to 125
o
TA
–-40 to +85
o
Voltage on any pin relative to VSS
Operating Temperature
*
C
C
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 5: Operating Characteristics (Over specified Temperature Range)
Item
Supply Voltage
Supply Voltage I/O Only
Symbol
Test Conditions
Min
Typ
Max
Unit
VCC
1.7
2.2
V
VCCQ
2.3
3.6
V
Minimum Data Retention Voltage
VDR
Input High Voltage
VIH
0.7VCC
VCC +0.5
V
Input Low Voltage
VIL
–0.5
0.3VCC
V
Output High Voltage
VOH
IOH = 0.2mA
Output Low Voltage
VO L
IOL = -0.2mA
0.2
V
Input Leakage Current
I LI
VIN = 0 to VCC
0.5
uA
Output Leakage Current
ILO
OE = V IH or Chip Disabled
0.5
uA
Read/Write Operating Supply Current @ 1 uS Cycle Time
ICC1
2.0
mA
Random Access Operating Supply
Current @ 70 nS Cycle Time
ICC2
15.0
mA
Page Mode Operating Supply Current @ 25 nS Cycle Time
ICC2
VCC=2.2 V, V IN=VIH or VIL
Chip Enabled, IOL = 0
7.0
mA
Read/Write Quiescent Operating
Supply Current (Note 2)
ICC3
VIN = V CC or 0V
Chip Enabled, IOL = 0 f = 0,
t A= 85oC, VCC = 3.6 V
2.0
mA
Operating Standby Current
(Note 2)
I SB1
VIN = V CC or 0V
Chip Disabled
tA = 55oC, VCC = 2.2 V
2
uA
Maximum Standby Current
(Note 2)
I SB2
VIN = V CC or 0V
Chip Disabled
tA = 85oC, VCC = 2.2 V
20
uA
Maximum Data Retention Current
(Note 2)
I DR
5
uA
Chip Disabled (Note 2)
1.2
V
VCC –0.2
VCC=2.2 V, V IN=VIH or VIL
Chip Enabled, IOL = 0
VCC=2.2 V, V IN=VIH or VIL
Chip Enabled, IOL = 0
Vcc = 1.2V, VIN = VCC or 0
Chip Disabled, tA = 85o C
V
1. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). It will also go into a standby mode whenever
if both UB and LB are high. In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS.
2. The Chip is Disabled when CE1 is high or CE2 is low. The Chip is Enabled when CE1 is low and CE2 is high.
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
3
EM512D16
NanoAmp Solutions, Inc.
Advance Information
TABLE 6: Timing Test Conditions
Item
Input Pulse Level
0.1V CC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Operating Temperature
-40 to +85 o C
TABLE 7: Timing
Item
Symbol
VCCQ = 2.3 - 3.6 V
Min.
Max.
VCCQ = 2.7 - 3.6 V
Min.
Units
Max.
Read Cycle Time
tRC
Address Access Time (Random Access)
tAA
85
70
ns
Address Access Time (Word Mode)
tAAW
85
70
ns
Chip Enable to Valid Output
tCO
85
70
ns
Output Enable to Valid Output
tO E
30
25
ns
Byte Select to Valid Output
t LB, tUB
85
70
ns
Chip Enable to Low-Z output
t LZ
10
10
ns
Output Enable to Low-Z Output
tOLZ
5
5
ns
Byte Select to Low-Z Output
tLBZ , tUBZ
10
10
ns
Chip Disable to High-Z Output
tHZ
0
20
0
20
ns
Output Disable to High-Z Output
tOHZ
0
20
0
20
ns
Byte Select Disable to High-Z Output
tLBHZ, tUBHZ
0
20
0
20
ns
Output Hold from Address Change
tOH
10
10
ns
Write Cycle Time
tWC
85
70
ns
Chip Enable to End of Write
tCW
50
50
ns
Address Valid to End of Write
t AW
40
40
ns
Byte Select to End of Write
t LBW, tUBW
50
50
ns
Write Pulse Width
t WP
40
40
ns
Address Setup Time
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
40
40
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
5
5
ns
Stock No. 23144-B 3/01
85
70
20
Advance - Subject to Change Without Notice
ns
20
ns
4
EM512D16
NanoAmp Solutions, Inc.
Advance Information
FIGURE 4: Timing of Read Cycle (1) (CE = OE = VIL , WE = VIH )
tRC, tRCW
Address
tAA, tAAW
tOH
Data Out
Previous Data Valid
Data Valid
FIGURE 5: Timing Waveform of Read Cycle (2) (WE = VIH )
tRC, tRCW
Address
tAA, tAAW
tHZ(1,2)
CE1
tCO
CE2
tLZ(2)
tOHZ(1)
tOE
OE#
tOLZ
tLB, tUB
LB , UB
tLBLZ, tUBLZ
High-Z
Data Out
Stock No. 23144-B 3/01
tLBHZ, tUBHZ
Data Valid
Advance - Subject to Change Without Notice
5
EM512D16
NanoAmp Solutions, Inc.
Advance Information
FIGURE 6: Timing Waveform of Page Mode Read Cycle (WE = VIH)
tRC
Page Address (A4 - A17)
tAAW
tRCW
tAA
Word Address (A0 - A3)
tHZ
CE1
tCO
CE2
tO E
tOHZ
OE
tOLZ
tLB, tUB
LB, UB
tLBLZ, tUBLZ
tLBHZ, tUBHZ
High-Z
Data Out
Stock No. 23144-B 3/01
Advance - Subject to Change Without Notice
6
EM512D16
NanoAmp Solutions, Inc.
Advance Information
FIGURE 7: Timing Waveform of Write Cycle (1) (WE control)
tWC
Address
tWR
tA W
CE1
tCW
CE2
tLBW, tUBW
LB, UB
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
FIGURE 8: Timing Waveform of Write Cycle (2) (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tWR
tCW
tAS
tLBW , tUBW
LB, UB
tW P
WE
tDW
Data Valid
Data In
tLZ
Data Out
Stock No. 23144-B 3/01
tDH
tWHZ
High-Z
Advance - Subject to Change Without Notice
7
EM512D16
NanoAmp Solutions, Inc.
Advance Information
FIGURE 9: BALL GRID ARRAY PACKAGING
0.20±0.04
1.40±0.10
D
A1 BALL PAD
CORNER (3)
1. .30 DIA. TYP
E
2. SEATING PLANE - Z
0.70±0.05
TOP VIEW
0.15
Z
0.05
Z
SIDE VIEW
A1 BALL PAD
CORNER
SD
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER
BALLS.
e
SE
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
TABLE 8: Dimensions (mm)
e = 0.75
D
8.0
Stock No. 23144-B 3/01
SD
SE
J
K
BALL
MATRIX
TYPE
0.375
0.375
2.125
2.375
FULL
E
10.0
Advance - Subject to Change Without Notice
8
EM512D16
NanoAmp Solutions, Inc.
Advance Information
TABLE 9: Revision History
Revision
Date
A
Jan. 1, 2001
B
Mar 2001
Change Description
Initial Advance Release
Deleted TSOP references
© 2001 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this datasheet and the products described therein, without prior
notice. NanoAmp does not convey any license under its patent rights nor the rights of
others. Charts, drawings and schedules contained in this datasheet are provided for
illustration purposes only and they vary depending upon specific applications.
Stock No. 23144-B 3/01
NanoAmp makes no warranty or guarantee regarding suitability of these products for
any particular purpose, nor does NanoAmp assume any liability arising out of the
application or use of any product or circuit described herein. NanoAmp does not
authorize use of its products as critical components in any application in which the
failure of the NanoAmp product may be expected to result in significant injury or
death, including life support systems and critical medical instruments.
Advance - Subject to Change Without Notice
9