EON EN29LV040A

EN29LV040A
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
EN29LV040A
da0.
4 Megabit (512K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
FEATURES
• Fully compatible with EN29LV040
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
• High performance
- Access times as fast as 45 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 μA typical standby current (standard access
time to active mode)
•
-
Flexible Sector Architecture:
Eight 64 Kbyte sectors
Supports full chip erase
Individual sector erase supported
Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle
bits feature
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• triple-metal double-poly triple-well CMOS
Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 100K program/erase endurance
cycle
• Package options
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
- 32-pin PDIP
• Commercial and industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 524,288 bytes. Any byte can be programmed typically in 8µs. The EN29LV040A features 3.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29LV040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
CONNECTION DIAGRAMS
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
TABLE 1. PIN DESCRIPTION
FIGURE 1. LOGIC DIAGRAM
Pin Name
Function
A0-A18
Addresses
DQ0-DQ7
8 Data Inputs/Outputs
WE#
Write Enable
CE#
Chip Enable
OE#
Output Enable
Vcc
Supply Voltage
CE#
Vss
Ground
OE#
EN29LV040A
DQ0 – DQ7
A0 - A18
WE#
TABLE 2. UNIFORM BLOCK SECTOR ARCHITECTURE
Sector
ADDRESS RANGE
SECTOR SIZE
(KBytes)
A18
A17
A16
7
70000h –7FFFFh
64
1
1
1
6
60000h – 6FFFFh
64
1
1
0
5
50000h – 5FFFFh
64
1
0
1
4
40000h – 4FFFFh
64
1
0
0
3
30000h – 3FFFFh
64
0
1
1
2
20000h – 2FFFFh
64
0
1
0
1
10000h – 1FFFFh
64
0
0
1
0
00000h – 0FFFFh
64
0
0
0
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
PRODUCT SELECTOR GUIDE
Product Number
EN29LV040A
Regulated Voltage Range: Vcc=3.0-3.6 V
Full Voltage Range: Vcc=2.7 – 3.6 V
Speed Option
-45R
-55R
-70
Max Access Time, ns (tacc)
45
55
70
Max CE# Access, ns (tce)
45
55
70
Max OE# Access, ns (toe)
25
30
30
BLOCK DIAGRAM
Vcc
Vss
DQ0-DQ7
Block Protect Switches
Erase Voltage Generator
Input/Output Buffers
State
Control
WE#
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
Vcc Detector
Timer
Address Latch
STB
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A18
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
TABLE 3. OPERATING MODES
4M FLASH USER MODE TABLE
Operation
Read
Write
CMOS Standby
Output Disable
Reset
Temporary
Sector Unprotect
CE#
L
L
Vcc ± 0.3V
L
X
OE#
L
H
X
H
X
WE#
H
L
X
H
X
A0-A18
AIN
AIN
X
X
X
DQ0-DQ7
DOUT
DIN
High-Z
High-Z
High-Z
X
X
X
AIN
DIN
Notes:
L=logic low= VIL, H=Logic High= VIH, VID =11 ± 0.5V, X=Don’t Care (either L or H, but not floating!),
DIN=Data In, DOUT=Data Out, AIN=Address In
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
4M FLASH MANUFACTURER/DEVICE ID TABLE
CE#
OE#
WE#
A18
to
A16
A15
to
A10
A9
Manufacturer
ID: Eon
L
L
H
X
X
VID
Device ID
L
Description
Sector
Protection
Verification
2
A8
A7
A6
A5
to
A2
A1
A0
X
L
X
L
L
1
L
H
X
X
VID
H
L
X
DQ7 to DQ0
1Ch
7Fh
X
L
X
L
H
4Fh
01h
L
L
H
SA
X
VID
X
X
L
X
H
L
(Protected)
00h
(Unprotected)
Note:
1. A8 = H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will output a
configuration code 7Fh.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect Mode.
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
USER MODE DEFINITIONS
Standby Mode
The EN29LV040A has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical).
It is placed in CMOS-compatible standby when the CE pin is at VCC ± 0.3. The device also has a TTLcompatible standby mode, which reduces the maximum VCC current to < 1mA. It is placed in TTLcompatible standby when the CE pin is at VIH. When in standby modes, the outputs are in a highimpedance state independent of the OE input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more additional information.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” additional details.
Output Disable Mode
When the CE or OE pin is at a logic high level (VIH), the output from the EN29LV040A is disabled.
The output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed in-system through the command
register.
When using programming equipment, the autoselect mode requires VID (11 V) on address pin A9.
Address pins A8, A6, A1, and A0 must be as shown in Autoselect Codes table. In addition, when
verifying sector protection, the sector address must appear on the appropriate highest order address
bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the
remaining address bits that are don’t-care. When all necessary bits have been set as required, the
programming equipment may then read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system; the host system can issue the autoselect command via the
command register, as shown in the Command Definitions table. This method does not require VID. See
“Command Definitions” for details on using the autoselect mode.
Write Mode
Write operations, including programming data and erasing sectors of memory, require the host system
to write a command or command sequence to the device. Write cycles are initiated by placing the byte
or word address on the device’s address inputs while the data to be written is input on DQ[7:0]. The
host system must drive the CE# and WE# pins Low and the OE# pin High for a valid write operation to
take place. All addresses are latched on the falling edge of WE# and CE#, whichever happens later. All
data is latched on the rising edge of WE# or CE#, whichever happens first. The system is not required
to provide further controls or timings. The device automatically provides internally generated program /
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
erase pulses and verifies the programmed /erased cells’ margin. The host system can detect
completion of a program or erase operation by reading the DQ[7] (Data# Polling) and DQ[6] (Toggle)
status bits.
The ‘Command Definitions’ section of this document provides details on the specific device commands
implemented in the EN29LV040A.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors.
Sector protection/unprotection is intended only for programming equipment. This method requires VID
be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This method is
described in a separate document called EN29LV040A Supplement, which can be obtained by contacting
a representative of Eon Silicon Solution, Inc.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide new
data when addresses are changed. While in sleep mode, output is latched and always available to the
system. ICC4 in the DC Characteristics table represents the automatic sleep more current specification.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by false system level signals during Vcc power up and power down transitions, or
from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than
VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE , CE or W E do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL, CE = VIH, or W E = VIH. To initiate a write
cycle, CE and W E must be a logical zero while OE is a logical one. If CE , W E , and OE are all
logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even with
CE = VIL, W E = VIL and OE = VIH, the device will not accept commands on the rising edge of W E .
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
COMMAND DEFINITIONS
The operations of the EN29LV040A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the specified
operation are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data
values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV040A Command Definitions
Command
Sequence
Read
Reset
Cycles
Bus Cycles
st
nd
1
rd
2
Cycle
Add
Data
th
5
6
Cycle
Add
Data
Cycle
Add
Data
Cycle
Add
Data
RA
Xxx
RD
F0
4
555
AA
2AA
55
555
90
4
555
AA
2AA
55
555
4
555
AA
2AA
55
Program
4
555
AA
2AA
Chip Erase
6
555
AA
Sector Erase
6
555
AA
Erase Suspend
Erase Resume
1
1
xxx
xxx
B0
30
Autoselect
Device ID
Sector Protect Verify
th
4
Cycle
Add
Data
1
1
Manufacturer ID
th
3
Cycle
Add
Data
000
7F
100
1C
90
X01
4F
555
90
(SA)
X02
00/
01
55
555
A0
PA
PD
2AA
55
555
80
555
AA
2AA
55
555
10
2AA
55
555
80
555
AA
2AA
55
SA
30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A18-A16 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to retrieve
data. The device is also ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data
using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same exception.
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or while
in the autoselect mode. See next section for details on Reset.
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or modifications due to changes in technical specifications.
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EN29LV040A
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes,
and determine whether or not a sector is protected. The Command Definitions table shows the address and
data requirements. This is an alternative to the method that requires VID on address bit A9 and is intended
for PROM programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 4 any number of
times, without needing another command sequence.
The system must write the reset command to exit the autoselect mode and return to reading array data.
Programming Command
Programming the EN29LV040A is performed by using a four bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer
terminates the program operation automatically. Address is latched on the falling edge of CE or W E ,
whichever is last; data is latched on the rising edge of CE or W E , whichever is first.
Programming status may be checked by sampling data on DQ7 ( DATA polling) or on DQ6 (toggle bit).
When the program operation is successfully completed, the device returns to read mode and the user
can read the data programmed to the device at that address. Note that data can not be programmed
from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When programming time limit
is exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read mode.
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. The Command Definitions table shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Chip Erase algorithm are ignored.
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer latched.
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command. The Command Definitions table shows
the address and data requirements for the sector erase command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the
algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics”
section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector
erase operation. The Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm. Addresses are don’t-cares when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to any
sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read
and write timings and command definitions apply. Reading at any address within erase-suspended sectors
produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. See “Write Operation Status” for information on these status
bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more information.
The Autoselect command is not supported during Erase Suspend Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase suspend
mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7: DATA Polling
The EN29LV040A provides DATA Polling on DQ7 to indicate to the host system the status of the
embedded operations. The DATA Polling feature is active during the embedded Programming, Sector
Erase, Chip Erase, Erase Suspend. (See Table 6)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the embedded Programming, an
attempt to read the device will produce the true data last written to DQ7. For the embedded
Programming, DATA polling is valid after the rising edge of the fourth WE or C E pulse in the fourcycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the DQ7
output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7 output
during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth W E or CE
pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last rising edge of
the sector erase W E or C E pulse.
DATA Polling must be performed at any address within a sector that is being programmed or erased
and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the address used
is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when the
output enable ( OE ) is low. This means that the device is driving status information on DQ7 at one
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EN29LV040A
instant of time and valid data at the next instant of time. Depending on when the system samples the
DQ7 output, it may read the status of valid data. Even if the device has completed the embedded
operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid. The valid data
on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing
diagram is shown in Figure 8.
DQ6: Toggle Bit I
The EN29LV040A provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device at
any address (by toggling OE or CE ) will result in DQ6 toggling between “zero” and “one”. Once the
embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be read
on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the rising edge
of the fourth WE pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is valid after the
rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after the last rising
edge of the Sector Erase W E pulse.
In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 μs, then
stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all
selected blocks are protected, DQ6 will toggle for about 100 μs. The chip will then return to the read
mode without changing data in all protected blocks.
Toggling either CE or OE will cause DQ6 to toggle.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown
in Figure 9.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or
erase cycle was not successfully completed. Since it is possible that DQ5 can become a 1 when the
device has successfully completed its operation and has returned to read mode, the user must check
again to see if the DQ6 is toggling after detecting a “1” on DQ5.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition,
the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a
“1.” Under both these conditions, the system must issue the reset command to return the device to
reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the output on DQ3 can be used to determine whether
or not an erase operation has begun. (The sector erase timer does not apply to the chip erase
command.) When sector erase starts, DQ3 switches from “0” to “1.” This device does not support
multiple sector erase command sequences so it is not very meaningful since it immediately shows as a
“1” after the first 30h command. Future devices may support this feature.
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© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
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EN29LV040A
DQ2: Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2
toggles when the system reads at addresses within those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether
the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 5 to
compare outputs for DQ2 and DQ6.
Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm.
See also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical
form.
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically,
a system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the
following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed
the program or erase operation. If it is still toggling, the device did not complete the operation successfully,
and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Flowchart 6).
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© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
Write Operation Status
Operation
Standard
Mode
Erase
Suspend
Mode
DQ7
DQ6
DQ5
DQ3
DQ2
Embedded Program
Algorithm
DQ7#
Toggle
0
N/A
No
toggle
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
1
No
Toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend Program
Table 6. Status Register Bits
DQ
Name
Logic Level
‘1’
‘0’
7
6
DATA
POLLING
TOGGLE
BIT
5
TIME OUT BIT
3
ERASE
TIME OUT BIT
2
TOGGLE
BIT
DQ7
Definition
Erase Complete or
erase Sector in Erase suspend
Erase On-Going
Program Complete or
data of non-erase Sector during Erase
Suspend
Program On-Going
DQ7
‘-1-0-1-0-1-0-1-’
Erase or Program On-going
DQ6
Read during Erase Suspend
‘-1-1-1-1-1-1-1-‘
Erase Complete
‘1’
Program or Erase Error
‘0’
Program or Erase On-going
‘1’
Erase operation start
‘0’
Erase timeout period on-going
Chip Erase, Erase or Erase suspend on
currently addressed
Sector. (When DQ5=1, Erase Error due to
currently addressed Sector. Program during
Erase Suspend on-going at current address
‘-1-0-1-0-1-0-1-’
DQ2
Erase Suspend read on
non Erase Suspend Sector
Notes:
DQ7 DATA
Polling: indicates the P/E C status check during Program or Erase, and on completion before checking bits DQ5
for Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged. Successive
reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Time Out Bit: set to “1” if failure in programming or erase
DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES).
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.
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or modifications due to changes in technical specifications.
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EN29LV040A
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program
Command Sequen ce
(shown below)
Data Poll Device
Verify Data?
No
Yes
Increment
Address
Last
No
Address?
Yes
Prog ra mming Done
Flowchart 2. Embedded Program Command Sequence
555H/AAH
2AAH/55H
555H/A0H
PROGRAM ADDRESS / PROGRAM DATA
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EN29LV040A
Flowchart 3. Embedded Erase
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Data =FFh?
No
Yes
Erase Done
Flowchart 4. Embedded Erase Command Sequence
Chip Erase
Sector Erase
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/80H
555H/80H
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/10H
Sector Address/30H
This Data Sheet may be revised by subsequent versions
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EN29LV040A
Flowchart 5. DATA Polling
Algorithm
Start
Read Data
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Data (1)
Notes:
(1) This second read is necessary in case the
first read was done at the exact instant when
the status data was in transition.
Yes
DQ7 = Data?
No
Fail
Pass
Start
Flowchart 6. Toggle Bit Algorithm
Read Data twice
No
DQ6 = Toggle?
Yes
No
DQ5 = 1?
Yes
Read Data twice (2)
Notes:
(1) This second set of reads is necessary in case
the first set of reads was done at the exact
instant when the status data was in transition.
No
DQ6 = Toggle?
Yes
Fail
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or modifications due to changes in technical specifications.
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Pass
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EN29LV040A
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
ILO
Max
Unit
0V≤ VIN ≤ Vcc
±1
µA
Output Leakage Current
0V≤ VOUT ≤ Vcc
±1
µA
ICC1
Supply Current (read - CMOS)
7
12
mA
ICC2
Supply Current (Standby - CMOS)
1
5.0
µA
ICC3
Supply Current (Program or Erase)
CE# = VIL; OE# = VIH;
f = 5MHz
CE# = Vcc ± 0.3V
Byte program, Sector or
Chip Erase in progress
15
30
mA
ICC4
Automatic Sleep Mode
1
5.0
µA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7 x
Vcc
VOL
Output Low Voltage
IOL = 4.0 mA
Vcc +
0.3
0.45
VOH
Output High Voltage CMOS
IOH = -100 μA,
VID
A9 Voltage (Electronic Signature)
IID
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
VLKO
Min
VIH = Vcc ± 0.3 V
VIL = Vss ± 0.3 V
Typ
Vcc 0.4V
10.5
A9 = VID
2.3
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
V
V
V
11.5
V
100
µA
2.5
V
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EN29LV040A
Test Conditions
Device Under Test
CL
Test Specifications
Test Conditions
-45R
-55R
-70
Unit
Output Load Capacitance, CL
30
30
30
pF
Input Rise and Fall times
5
5
5
ns
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
0.0-3.0
0.0-3.0
0.0-3.0
V
1.5
1.5
1.5
V
1.5
1.5
1.5
V
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or modifications due to changes in technical specifications.
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EN29LV040A
Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
JEDEC
Standard
Description
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable To Output Delay
tGLQV
tOE
tEHQZ
Speed Options
Test
Setup
-45R
-55R
-70
Unit
Min
45
55
70
ns
CE = VIL
OE = VIL
Max
45
55
70
ns
OE = VIL
Max
45
55
70
ns
Output Enable to Output Delay
Max
25
30
30
ns
tDF
Chip Enable to Output High Z
Max
10
15
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
10
15
20
ns
tAXQX
tOH
Min
0
0
0
ns
Output Hold Time from
Notes:
For -45R,-55R,70
Addresses, CE or OE ,
whichever occurs first
Vcc = 3.0V ± 5%
Output Load : 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
tBRCB
Addresses
Addresses Stable
tBACC
CE#
tBDF
tBOEB
OE#
tBOEHB
WE#
tBCEB
HIGH Z
Outputs
tBOH
Output Valid
HIGH Z
0V
Figure 5. AC Waveforms for READ Operations
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or modifications due to changes in technical specifications.
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EN29LV040A
Table 9. AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
-45R
-55R
-70
Unit
Min
45
55
70
ns
Address Setup Time
Min
0
0
0
ns
tAH
Address Hold Time
Min
35
45
45
ns
tDVWH
tDS
Data Setup Time
Min
20
25
30
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
ns
MIn
0
0
0
ns
Min
10
10
10
ns
Min
0
0
0
ns
tOEH
Read
Toggle and
DATA Polling
Read Recovery Time before
Output Enable
Hold Time
tGHWL
tGHWL
tELWL
tCS
CE SetupTime
Min
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
25
30
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
20
20
ns
tWHWH1
tWHWH1
Typ
8
8
8
µs
Programming Operation
Max
300
300
300
µs
tWHWH2
tWHWH2
Sector Erase Operation
Typ
0.5
0.5
0.5
s
tVCS
Vcc Setup Time
Min
50
50
50
µs
tVIDR
Rise Time to VID
Min
500
500
500
ns
Write ( OE High to W E Low)
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or modifications due to changes in technical specifications.
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EN29LV040A
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVEL
tAS
tELAX
Speed Options
-45R
-55R
-70
Unit
Min
45
55
70
ns
Address Setup Time
Min
0
0
0
ns
tAH
Address Hold Time
Min
35
45
45
ns
tDVEH
tDS
Data Setup Time
Min
20
25
30
ns
tEHDX
tDH
Data Hold Time
Min
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
ns
Read
Toggle and
Data Polling
Read Recovery Time before
Write ( OE High to CE Low)
Min
0
0
0
ns
Min
10
10
10
ns
Min
0
0
0
ns
tOEH
Output Enable
Hold Time
tGHEL
tGHEL
tWLEL
tWS
W E SetupTime
Min
0
0
0
ns
tEHWH
tWH
W E Hold Time
Min
0
0
0
ns
tELEH
tCP
Write Pulse Width
Min
25
30
35
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
ns
Typ
8
8
8
µs
Max
300
300
300
µs
tWHWH1 tWHWH1
Programming Operation
tWHWH2 tWHWH2
Sector Erase Operation
Typ
0.5
0.5
0.5
s
tVCS
Vcc Setup Time
Min
50
50
50
µs
tVIDR
Rise Time to VID
Min
500
500
500
ns
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
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EN29LV040A
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Typ
Limits
Max
Unit
Sector Erase Time
0.5
10
sec
Chip Erase Time
4
80
sec
Byte Programming Time
8
300
µs
Parameter
Comments
Excludes 00H programming prior
to erasure
Excludes system level overhead
Chip Programming Time
4.2
Erase/Program Endurance
100K
12.6
sec
Minimum 100K cycles
cycles
Table 12. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Data Retention Time
Table 13. TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Table 14. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
12
pF
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
AC CHARACTERISTICS
Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x2AA
Read Status Data (last two cycles)
tAH
SA
VA
VA
0x555 for chip
erase
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
Data
0x55
tDS
VCC
tWHWH 2
0x30
tDH
Status
DOUT
10 for chip
erase
tVCS
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
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EN29LV040A
Figure 7. Program Operation Timings
Program Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x555
Program Command Sequence (last 2 cycles)
tAH
PA
PA
PA
CE#
tGHWL
OE#
tCH
tWP
WE#
tWPH
tWHWH1
tCS
Data
OxA0
tDS
tVCS
PD
Status
DOUT
tDH
VCC
Notes:
1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address.
2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
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EN29LV040A
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
tRC
Addresses
VA
tCH
VA
VA
tACC
tCE
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ[7]
Complement
DQ[6:0]
Status Data
Comple
-ment
Status
Data
Valid Data
True
True
Valid Data
Notes:
1. VA=Valid Address for reading Data# Polling status data
2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle.
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations
tRC
VA
Addresses
tCH
VA
VA
VA
tACC
tCE
CE#
tOE
OE#
WE#
DQ6, DQ2
tOEH
tDF
tOH
Valid Status
(first read)
Valid Status
(second read)
Valid Status
Valid Data
(stops toggling)
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or modifications due to changes in technical specifications.
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EN29LV040A
Figure 10. Alternate CE# Controlled Write Operation Timings
PA for Program
SA for Sector Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
Addresses
VA
tWC
tAS
tAH
WE#
tWH
tGHEL
OE#
tCP
tCPH
tWHWH1 / tWHWH2
tWS
CE#
tDS
tDH
Status
Data
0xA0 for
Program
0x55 for Erase
DOUT
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
Dout = array data read at VA
Figure 11. DQ2 vs. DQ6
Enter
Embedded
Erase
WE#
Enter Erase
Suspend
Program
Erase
Suspend
Erase
Enter
Suspend
Read
Erase
Resume
Enter
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Storage Temperature
-65 to +150
°C
Plastic Packages
-65 to +125
°C
-55 to +125
°C
200
mA
A9 and OE# 2
-0.5 to +11.5
V
All other pins 3
-0.5 to Vcc+0.5
V
Vcc
-0.5 to +4.0
V
Ambient Temperature
With Power Applied
Output Short Circuit Current1
Voltage with
Respect to Ground
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC input voltage on A9 and OE# pins is –0.5V. During voltage transitions, A9 and OE# pins may undershoot Vss to –
1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on A9 and
OE# is 11.5V which may overshoot to 12.5V for periods up to 20ns.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of
up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
4.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress
rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the
device to the maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES1
Parameter
Ambient Operating Temperature
Commercial Devices
Industrial Devices
Operating Supply Voltage
Vcc
Value
Unit
0 to 70
-40 to 85
°C
Regulated Voltage
Range: 3.0-3.6
V
Standard Voltage Range:
2.7 to 3.6
1.
Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot
Waveform
Maximum Positive Overshoot
Waveform
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
PHYSICAL DIMENSIONS
PL 032 — 32-Pin Plastic Leaded Chip Carrier
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© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
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EN29LV040A
PHYSICAL DIMENSIONS (continued)
PD 032 — 32-Pin Plastic DIP
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© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
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EN29LV040A
PHYSICAL DIMENSIONS (continued)
32L TSOP-1 8mm x 14mm
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
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or modifications due to changes in technical specifications.
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EN29LV040A
ORDERING INFORMATION
EN29LV040A
70
S
C
P
PACKAGING CONTENT
P = RoHS compliant
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
P = 32 Plastic DIP
J = 32-pin Plastic PLCC
S = 32-pin 8mm x 14mm TSOP-1
SPEED
45R = 45ns Regulated range 3.0V~3.6V
55R = 55ns Regulated range 3.0V~3.6V
70 = 70ns
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
29LV = FLASH, 3V Read Program Erase
040 = 4 Megabit (512K x 8) uniform sector
A = version A
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
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EN29LV040A
Revisions List
Revision No Description
A
B
C
D
E
Date
Initial draft
2005/08/15
1. Add 32 pin PDIP for package options in page 1
2. Add 32 pin PDIP diagram in page 2
2007/01/05
3. Add 32-Pin PDIP in Physical Dimensions in page 32
4. Add 32 pin PDIP package option ‘P’ to ordering information in page 35
1. Add Eon products’ New top marking “cFeon“ information in page 1.
2009/01/09
2. Remove package 8mm x 20mm 32-pin TSOP
1. Add the chip will output a configuration code 7Fh, if a manufacturing ID
is read with A8 = L (000h).
2. Modify Test Conditions illustration on page 19.
2011/05/03
3. Modify Storage Temperature from "-65 to + 125" to "-65 to +150" on
page 28.
4. Remove the Latch up Characteristics Table.
Correct the typo of VIH (max.) = Vcc + 0.3V on page 18.
2011/10/27
This Data Sheet may be revised by subsequent versions
© 2003 Eon Silicon Solution, Inc.,
33
or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2011/10/27
www.eonssi.com