Photodiode-Chip EPC-880-0.9-1 Preliminary 23.05.2007 rev. 01/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter GaAs P (anode) up typ. dimensions (µm) 860 typ. thickness 300 µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm Ø120 PD-08 Description Infrared-selective photodiode with narrow response range (810 - 950 nm) Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0.72 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 1 V ID 1.0 Peak sensitivity VR = 0 V λP 890 Spectral range at 50 % VR = 0 V λ0.5 820 Responsivity at λP1 VR = 0 V Sλ 0.15 λP2 VR = 0 V VR = 0 V Reverse voltage3 Responsivity at Spectral bandwidth at 50% V 2.5 nA nm 935 nm 0.25 A/W Sλ 0.55 A/W ∆λ0,5 115 nm 1 Measured on bare covered chip on TO-18 header Measured on epoxy covered chip on TO-18 header 3 information only 2 Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-880-0.9-1 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-880-0.9-1 Preliminary 23.05.2007 rev. 01/07 Typical spectral response [A/W] 0,6 0,5 0,4 0,3 0,2 0,1 0,0 700 750 800 850 900 Wavelength [nm] 950 1000 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2