EPIGAP EPC-880-0.9-1

Photodiode-Chip
EPC-880-0.9-1
Preliminary
23.05.2007
rev. 01/07
Wavelength range
Type
Technology
Electrodes
Infrared, selective
Integrated filter
GaAs
P (anode) up
typ. dimensions (µm)
860
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Ø120
PD-08
Description
Infrared-selective photodiode with narrow
response range
(810 - 950 nm)
Applications
Optical communications,
safety equipment, light
barriers
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
A
0.72
mm²
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
Typ
Max
Unit
Active area
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
IR = 10 µA
VR
5
Dark current
VR = 1 V
ID
1.0
Peak sensitivity
VR = 0 V
λP
890
Spectral range at 50 %
VR = 0 V
λ0.5
820
Responsivity at λP1
VR = 0 V
Sλ
0.15
λP2
VR = 0 V
VR = 0 V
Reverse voltage3
Responsivity at
Spectral bandwidth at 50%
V
2.5
nA
nm
935
nm
0.25
A/W
Sλ
0.55
A/W
∆λ0,5
115
nm
1
Measured on bare covered chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
3
information only
2
Labeling
Type
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-880-0.9-1
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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Photodiode-Chip
EPC-880-0.9-1
Preliminary
23.05.2007
rev. 01/07
Typical spectral response [A/W]
0,6
0,5
0,4
0,3
0,2
0,1
0,0
700
750
800
850
900
Wavelength [nm]
950
1000
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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