Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev. 03/07 Wavelength Type Technology Case Infrared Planar InGaAs/InP TO-18 Description InGaAs-Photodiode mounted in TO-18 standard package covered with epoxy. High spectral sensitivity in the infrared range (NIR, SWIR). Ø 5,40 ± 0,1 epoxy-lens Cathode 45° Ø 4,2 ± 0,2 2,54 ± 0,2 Ø 0,45 Au-plating Applications Anode 1, 0 0,2 2,0 ± 0,2 13,5 ± 1,0 2,8 ± 0,4 Optical communications, safety equipment, light barriers TO-18+epoxy Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.196 mm² Temperature coefficient TC(ID) 0.074 1/K Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 10 mA Forward voltage 2) Symbol Min VF 0.8 V IR = 10 µA VR 5 Sensitivity range at 10 % VR = 0 V λ 800 Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm1) VR = 0 V Sλ 0.9 A/W Dark current VR = 5 V ID 250 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 1300 nm Specific detectivity λ = 1300 nm D* VR = 0 V CJ Breakdown voltage Junction capacitance 1) 2) NEP 0.5 V 1750 1000 1.0 1.1x10 nm pA GΩ -14 4.0x10 12 45 W/ Hz cm ⋅ Hz ⋅ W −1 pF measured on bare chip on TO-18 header for information only EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev. 03/07 Typical Optical Responsivity (A/W ) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2