tm FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. Ultrafast Recovery, Trr = 32 ns (@ IF = 30 A) Max. Forward Voltage, VF = 1.15 V (@ TC = 25°C) Reverse Voltage: VRRM = 200 V Avalanche Energy Rated RoHS Compliant Applications • • • • Power Switching Circuits Output Rectifiers Freewheeling Diodes Switching Mode Power Supply TO-3PN 1 Absolute Maximum Ratings Symbol 2 1. Anode 2.Cathode 3. Anode 3 (per diode) TC=25°C unless otherwise noted VRRM Parameter Peak Repetitive Reverse Voltage Value 200 Unit V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 30 A 300 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Value 1.4 Unit °C/W @ TC = 100°C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Electrical Characteristics Symbol VF * IR * (per diode) TC=25 °C unless otherwise noted Parameter Maximum Instantaneous Forward Voltage IF = 30 A IF = 30 A Maximum Instantaneous Reverse Current @ rated VR Min. Typ. Max. TC = 25 °C TC = 100 °C - - 1.15 1.0 TC = 25 °C TC = 100 °C - - 10 100 Unit V µA trr Irr Qrr Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF = 30 A, di/dt = 200 A/µs) - 32 2.4 38.4 - ns A nC trr Maximum Reverse Recovery Time (IF =1 A, di/dt = 100 A/µs) - - 40 ns WAVL Avalanche Energy (L = 40 mH) 2 - - mJ *Pulse Test: Pulse Width=300 µs, Duty Cycle=2% ©2004 Fairchild Semiconductor Corporation Rev. A, August 2004 FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode September 2004 10 100 o Reverse Current , I R [µA] Forward Current , IF [A] TC = 100 C o TC = 100 C 10 o TC = 25 C 1 0.1 0.0 1 o TC = 25 C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 0 50 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 473.9 pF 400 Capacitance , Cj [pF] 200 40 500 200 1 10 IF = 30A o Tc = 25 C 35 30 25 100 100 500 di/dt [A/µs] Reverse Voltage , VR [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Figure 3. Typical Junction Capacitance IF = 30A o 5 TC = 25 C 4 3 2 1 0 100 500 di/dt [A/µs] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2004 Fairchild Semiconductor Corporation 35 30 25 DC Average Forward Current , IF(AV) [A] 6 Reverse Recovery Current , Irr [A] 150 Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 0.1 100 Reverse Voltage , VR [V] Forward Voltage , VF [V] 20 15 10 5 0 60 80 100 120 140 160 o Case Temperature , TC [ C] Figure 6. Forward Current Derating Curve Rev. A, August 2004 FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Typical Characteristics FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, August 2004 ©2004 Fairchild Semiconductor Corporation