ES1PA thru ES1PD Vishay Semiconductors New Product formerly General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 15 ns Case Style SMP Features Cathode band • • • • • • • Very low profile - typical height of 1.0mm For surface mount application Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward voltage, low power loss Built in strain relief, ideal for automated placement High temperature soldering: 260°C maximum/10 seconds at terminals • Meets MSL level 1 per J-STD-020C 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Mechanical Data 0.013 (0.35) 0.004 (0.10) Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) Mounting Pad Layout Dimensions in inches and (millimeters) 0.012 (0.30) REF 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27) 0.100 (2.54) 0.032 (0.80) 0.016 (0.40) Maximum Ratings & Thermal Characteristics (T A Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current see Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Symbol Typical thermal resistance (1) Operating junction and Storage temperature range Electrical Characteristics VRM IF(AV) = 25°C unless otherwise noted.) ES1PA EA 50 ES1PB EB 100 ES1PC EC 150 ES1PD ED 200 Unit 1.0 V A IFSM 30 A RθJA RθJL RθJC TJ, TSTG 105 15 20 –55 to +150 °C/W °C (TA = 25°C unless otherwise noted.) Parameter Symbol Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C VF at IF=1A, TJ=25°C Maximum reverse current TJ = 25°C IR at rated VRM(2) TJ =125°C Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr Typical reverse recovery time at TJ=25°C trr at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C Typical reverse recovery time at TJ=25°C Qrr at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C Typical junction capacitance at 4.0V, 1MHz CJ Value 0.865 0.920 5.0 500 15 25 30 8 10 10 Unit V µA ns ns nC pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body (2) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88918 23-Sep-04 www.vishay.com 1 ES1PA thru ES1PD Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Maximum Forward Current Derating Curve 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 90 100 110 120 130 140 20 15 10 05 1 150 10 100 Lead Temperature (°C) Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Leakage Characteristics 10000 10 Instantaneous Reverse Current (µA) 100 Instantaneous Forward Current (A) 25 0 0 80 TJ = 150°C 1 TJ = 25°C 0.1 TJ = 125°C 0.01 0.2 TJ = 150°C 1000 100 TJ = 125°C 10 1 TJ = 25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 10 20 30 40 60 50 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 1000 Transien Thermal Impedance (°C/W) 100 Junction Capacitance (pF) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 10 1 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88918 23-Sep-04