FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted Symbol VRRM Parameter Peak Repetitive Reverse Voltage Value 200 Units V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave @ TC = 100°C 100 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Value 4.0 Units °C/W Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR trr Irr Qrr Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =10A, di/dt = 200A/µs) WAVL Avalanche Energy Min. Typ. Max. Units V TC = 25 °C TC = 100 °C - - 1.2 1.0 TC = 25 °C TC = 100 °C - - 10 100 - - 35 2.5 45 ns A nC 0.5 - - mJ µA * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 FFAF10U20DN Typical Characteristics 1000 100 [µA] o TC = 100 C o TC = 25 C 1 0.1 0.0 o TC = 100 C R 10 10 Reverse Current , I Forward Current , IF [A] 50 1 o TC = 25 C 0.1 0.01 0.001 0.5 1.0 1.5 0 2.0 50 Forward Voltage , VF [V] Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 286 pF Capacitance , Cj [pF] 200 40 400 300 200 100 1 10 IF = 10A o Tc = 25 C 35 30 25 20 100 100 500 di/dt [A/µs] Reverse Voltage , VR [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Figure 3. Typical Junction Capacitance [A] 6 Average Forward Current , I 5 F(AV) IF = 10A o TC = 25 C 4 3 2 1 0 100 500 di/dt [A/µ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2001 Fairchild Semiconductor Corporation 16 14 12 10 DC Reverse Recovery Current , rrI [A] 150 Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 0.1 100 Reverse Voltage , VR [V] 8 6 4 2 0 60 80 100 120 140 160 o Case Temperature , TC [ C] Figure 6. Forward Current Derating Curve Rev. A, December 2001 FFAF10U20DN Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 0.85 ±0.03 2.50 ±0.20 14.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4