1,310nm Un-Cooled MQW-DFB
Direct Modulation Laser
FLD3F11BX
FEATURES
• Directly Modulated Un-Cooled MQW DFB Laser
• 2mW Output Power
• 2.5Gb/s, 40km Transmission Span Operation
• Built-in Thermistor, Monitor PD and Optical Isolator
APPLICATIONS
This MQW laser is intended for application in short and intermediate
reach 2.5 Gb/s fiber transmission systems. Transmission spans of up
to 40km are achievable without the need for regeneration.
DESCRIPTION
The MQW (Multiple Quantum Well) DFB Laser is designed for
2.5Gb/s transmission over link lengths up to 40km. It is manufactured in an
industry standard 8-Pin mini-dil package. The module employs a high efficiency
optical coupling system, coupling the laser output through a built-in optical
isolator into a single mode fiber pigtail. The modules also include a monitor
photodiode and thermistor.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +85
°C
Operating Case Temperature
Top
0 to +75
°C
Optical Output Power
Pf
5.0
mW
Laser Forward Current
IF
150
mA
Laser Reverse Voltage
VR
2
V
Photodiode Forward Current
IDF
2
mA
Photodiode Reverse Voltage
VDR
10
V
Xop, Xst
85 @ Top
%
Tsold
10 @ <260°C
sec
Parameter
Operating and Storage Humidity
Laser Soldering time
Edition 1.1
August 2001
1
1,310nm Un-Cooled MQW-DFB
Direct Modulation Laser
FLD3F11BX
OPTICAL AND ELECTRICAL CHARACTERISTICS
(Tc=0 to +75°C, unless otherwise specified)
Limits
Typ. Max.
Symbol
Conditions
Ith
CW
3
-
45
mA
VFDC
CW, Pf=2.0mW
-
-
1.55
V
Input Impedance
R
CW, Pf=2.0mW
-
25
-
Ω
Optical Output Power at Bias
Pb
CW, IF = 0.9 Ith
-
-
50
µW
n
CW, Pf=2.0 mW (Note 2)
0.04
-
0.16
W/A
Tracking Error at Imon
TE
Pf=2.0mW,
APC (Note 1)
-1.0
-
+1.0
dB
Monitor Current
Im
CW, Pf=2.0mW, VDR=5V
0.07
-
1.5
mA
Photodiode Dark Current
ID
VDR=5V
-
20
100
nA
Photodiode Capacitance
Ct
VDR=5V, f=1 MHz
-
-
50
pF
Peak Wavelength
λp
1,290
1,310
1,330
nm
30
40
-
dB
-
-
1.0
nm
-
-
0.150
nsec
-
-
0.150
nsec
3.5
-
-
GHz
6
-
-
dB
20
-
-
dB
Parameter
Threshold Current
Forward Voltage (pin 3,8)
Slope Efficiency
SideMode Suppression Ratio
SSR
Spectral Width (-20 dB)
∆λ
Rise Time (10%-90%)
Fall Time (10%-90%)
tr
tf
Cutoff Frequency
fc
RF Return Loss
S11
Optical Isolation
Is
2.5 Gb/s NRZ
pseudo-random, Ib=0.9 Ith
Ppeak=2.0 mW
CW, Pf=2 mW, -3 dB
f=DC-3GHz, Pf = 2.0mW
Min.
Unit
Note 1. TE=10xlog{Pf(Tcase)/Pf(Tc=25°C)}dB.
2. η = Pf/(Iop-Ith)
2
Edition 1.0
March 2001
1,310nm Un-Cooled MQW-DFB
Direct Modulation Laser
FLD3F11BX
Forward Current vs Output Power
Output Power, Pf (mW)
3
Tc=0°C
2
25°C
75°C
1
0
0
20
40
60
Forward Current, If (mA)
Transmission Characteristics
10-3
2.48832Gb/s, PRBS 223-1, NRZ
Ib=0.9Ith, Ppk=2.0mW
: 25°C, 0ps/nm
: 25°C, 240ps/nm
: 0°C, 240ps/nm
Bit Error Rate
: 75°C, 240ps/nm
No Floor@BER 10-10
10-6
10-10
-35
-30
-25
Average Received Optical Power (dBm)
Edition 1.0
March 2001
3
1,310nm Un-Cooled MQW-DFB
Direct Modulation Laser
FLD3F11BX
“BX” PACKAGE
UNIT: mm
Connector
(6.9)
1.
8.
∅2.0±0.25
2.
7.
∅4.1±0.25
3.
6.
4.
5.
L
∅0.9±0.1
0
(R
(29)
Detail of Lead (5:1)
8-0.41
11.3±0.3
9.9
7.62=P2.54x3
0.50±0.15
0~10°
40Max
)
.7
1.2±0.15
Note
The pigtail length (L) and connector type
are specified in the detail (individual) specification.
4.42±0.45
7.4±0.3
(5.1)
Unit: mm
9.8±0.2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
• Do not put this product into the mouth.
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Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU MIIKROELCTRONIK GmbH
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0301M200
4
Edition 1.0
March 2001