FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 FEBRUARY 1997 PARTMARKING DETAILS: FMMT4400 FMMT4401 ✪ FMMT4400 - 1KZ FMMT4401 - 1L E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4400 PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO 40 40 V IC=1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 60 60 V IC=0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO 6 6 V IE=0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX 0.1 0.1 µA VCE=35V Base Cut-Off Current IBEX 0.1 0.1 µA VCE=35V Static Forward Current TransferRatio hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) 0.75 Transition Frequency fT 200 Output Capacitance Cobo 6.5 6.5 pF VCB=5 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V, IC=0 f=100kHz 20 40 50 20 MAX. FMMT4401 150 MIN. 20 40 80 100 40 0.4 0.75 0.95 1.2 0.75 MAX. VEB(off) =3V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* 0.4 0.75 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* 0.95 1.2 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* 250 PAGE NUMBER VEB(off) =0.4V 300 MHz IC=20mA,VCE=10V f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER UNIT CONDITIONS FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 FEBRUARY 1997 PARTMARKING DETAILS: FMMT4400 FMMT4401 ✪ FMMT4400 - 1KZ FMMT4401 - 1L E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4400 PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO 40 40 V IC=1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 60 60 V IC=0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO 6 6 V IE=0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX 0.1 0.1 µA VCE=35V Base Cut-Off Current IBEX 0.1 0.1 µA VCE=35V Static Forward Current TransferRatio hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) 0.75 Transition Frequency fT 200 Output Capacitance Cobo 6.5 6.5 pF VCB=5 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V, IC=0 f=100kHz 20 40 50 20 MAX. FMMT4401 150 MIN. 20 40 80 100 40 0.4 0.75 0.95 1.2 0.75 MAX. VEB(off) =3V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* 0.4 0.75 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* 0.95 1.2 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* 250 PAGE NUMBER VEB(off) =0.4V 300 MHz IC=20mA,VCE=10V f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER UNIT CONDITIONS