NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX314 ISSUE 2 MARCH 94 FEATURES * 15 Volt VCEO * fT=500 MHz C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Base Current IB 100 mA Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 40 MAX. V IC=10µA, IE=0 Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 200 30 µA nA VCB=20V, IE=0 VCB=20V, IE=0, Tamb=100°C Collector-Emitter Saturation Voltage VCE(SAT) 0.2 0.5 V V IC=10mA, IB=1mA* IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(SAT) 0.7 0.85 1.6 V IC=10mA, IB=1mA* IC=100mA, IB=10mA* Static Forward Current Transfer Ratio hFE 40 40 30 20 120 120 Transition Frequency fT 500 Output Capacitance Cobo Storage Time tstg Turn-on Time Turn-off Time IC=10mA, VCE=1V* IC=10mA, VCE=0.35V* IC=30mA, VCE=1V* IC=100mA, VCE=1V* MHz IC=10mA, VCE=10V f=100MHz 4 pF VCB=5V, f=1MHz 13 ns IC=IB1=IB2=10mA ton 12 ns IC=10mA, IB1=3mA toff 18 ns IC=10mA, IB1=3mA, IB2=1.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-158