IXYS FUE30-12N1

FUE 30-12N1
VRRM = 1200 V
ID(AV)M = 30 A
trr
= 130 ns
Fast Three Phase
Rectifier Bridge
in ISOPLUS i4-PACTM
1
3
4
5
1
5
2
Features
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
VRRM
1200
V
A
A
A
IFAV
ID(AV)M
IFSM
TC = 90°C; sine 180° (per diode)
TC = 90°C
(bridge)
TVJ = 25°C; t = 10 ms; sine 50 Hz
12
30
80
EAS
IAS= 9 A; LAS=180 µH; TC = 25°C; non repetitive
8.7 mJ
Ptot
TC = 25°C
50
Symbol
Conditions
(per diode)
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VF
IF = 10 A; TVJ = 25°C
TVJ = 125°C
2.2
1.6
2.6
V
V
IR
VR = VRRM; TVJ = 25°C
TVJ = 125°C
0.1
0.1
mA
mA
IRM
trr
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V
16
130
A
ns
RthJC
(per diode)
• HiPerFREDTM Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• high frequency rectifiers, output
rectifiers of switched mode power
supplies
• three phase mains rectifiers with
minimized electromagnetic emissions
2.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0548
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
1-3
FUE 30-12N1
Component
Conditions
Maximum Ratings
TVJ
Tstg
VISOL
IISOL ≤ 1 mA; 50/60 Hz
FC
mounting force with clip
Symbol
Conditions
CP
coupling capacity between
shorted pins and mounting tab in the case
dS,dA
dS,dA
pin - pin
pin - backside metal
RthCH
with heatsink compound
-55...+150
-55...+125
°C
°C
2500
V~
20...120
N
Characteristic Values
min.
typ. max.
40
1.7
5.5
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
pF
mm
mm
0.15
K/W
9
g
0548
Symbol
Dimensions in mm (1 mm = 0.0394")
2-3
FUE 30-12N1
TVJ = 100°C
VR = 600 V
µC
2.5
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
30
IF
50
3.0
40
A
35
25
Qr
IRM
IF = 30 A
IF = 15 A
IF = 7.5 A
2.0
TVJ = 100°C
VR = 600 V
A
40
IF = 30 A
IF = 15 A
IF = 7.5 A
30
1.5
20
20
15
1.0
10
10
0.5
5
0
0
1
2
3
V
0.0
100
4
0
A/µs
-diF/dt
VF
Fig. 1 Forward current IF vs. VF
1000
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
180
trr
120
600 A/µs
800 1000
-diF/dt
1.2
µs
VFR
IF = 30 A
IF = 15 A
IF = 7.5 A
140
IRM
0.5
400
TVJ = 100°C
IF = 15 A
tfr
V
160
Kf
1.0
200
Fig. 3 Peak reverse current IRM
versus -diF /dt
TVJ = 100°C
VR = 600 V
ns
1.5
0
tfr
80
0.8
40
0.4
120
QR
VR
0.0
100
0
40
80
120 °C 160
0
0
200
TVJ
400
600
800 1000
A/µs
0
200
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr vs. -diF /dt
10
K/W
400
0.0
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR
and tfr versus diF /dt
Constants for ZthJC calculation:
1
ZthJC
0.1
i
Rthi (K/W)
ti (s)
1
2
3
4
0.78545
0.30245
0.0621
1.15
0.0052
0.0003
0.0004
0.0092
0.01
FUE 30-12N1
0.001
0.0001
0.001
0.01
0.1
s
1
10
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0548
Fig. 7 Transient thermal resistance junction to case
3-3