IXYS FII30-06D

FII 30-06D
IGBT phaseleg
IC25
= 30A
VCES
= 600V
VCE(sat) typ.= 1.9V
in ISOPLUS i4-PAC™
3
5
4
E72873
1
2
Features
IGBT
Symbol
Conditions
VCES
TVJ = 25°C to 150°C
Maximum Ratings
VGES
IC25
IC90
TC = 25°C
TC = 90°C
ICM
VCEK
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 47 Ω
TVJ = 125°C; non-repetitive
Ptot
TC = 25°C
Symbol
Conditions
600
V
± 20
V
30
18
A
A
40
VCES
A
10
µs
100
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
VCE(sat)
IC = 20 A; VGE = 15 V
VGE(th)
IC = 0.5 mA; VGE = VCE
ICES
VCE = VCES; VGE = 0 V
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 Ω
Cies
QGon
RthJC
RthJH
TVJ = 25°C
TVJ = 125°C
typ.
max.
1.9
2.2
2.4
4.5
TVJ = 25°C
TVJ = 125°C
V
V
6.5
V
0.6
mA
mA
200
nA
0.6
50
55
200
30
0.75
0.6
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
1.1
nF
VCE = 300 V; VGE = 15 V; IC = 20 A
65
TVJ = 125°C
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
2.5
Applications
•single phaseleg
- buck-boost chopper
•H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
•three phase bridge
- AC drives
- controlled rectifier
nC
1.25
with heatsink compound
•NPT IGBT technology
-low saturation voltage
- positive temperature coefficient for
easy paralleling
-fast switching
•HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
•ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
K/W
K/W
20110119a
1-5
FII 30-06D
Diode
Symbol
Conditions
VRRM
TVJ = 25°C to 150°C
IF25
IF90
TC = 25°C
TC = 90°C
Symbol
Conditions
Maximum Ratings
600
V
30
15
A
A
Characteristic Values
min.
typ.
max.
2.7
VF
IF = 20 A
TVJ = 25°C
TVJ = 125°C
2.3
1.6
IRM
trr
IF = 15 A; diF/dt = -400 A/µs;
VR = 300 V; VGE = 0 V;
TVJ = 125°C
7
50
RthJC
RthJH
(per diode)
with heatsink compound
4.6
V
V
A
ns
2.3
K/W
K/W
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
VISOL
IISOL < 1 mA; 50/60 Hz; t = 1 s
FC
Mounting force with clip
Symbol
Conditions
CP
coupling capacity between shorted
pins and mounting tab in the case
dS, dA
dS, dA
pin - pin
pin - backside metal
-55...+150
-55...+125
°C
°C
2500
V~
20...120
Nm
Characteristic Values
min.
typ.
max.
40
pF
1.7
5.5
mm
mm
Weight
6
g
A2
A
E1
L
L1
D
R
D1
Q
E
D2
DIM.
C 4x e
A1
1 2 3 4 5
W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
b2
b4
b
A
A1
A2
b
b2
b4
C
D
D1
D2
E
E1
e
L
L1
Q
R
W
MILLIMETER
MIN
MAX
4.83
5.21
2.59
3.00
1.17
2.16
1.14
1.40
1.47
1.73
2.54
2.79
0.51
0.74
20.80
21.34
14.99
15.75
1.65
2.03
19.56
20.29
16.76
17.53
3.81 BSC
19.81
21.34
2.11
2.59
5.33
6.20
4.57
2.54
0.10
―
INCHES
MIN
MAX
0.190
0.205
0.102
0.118
0.046
0.085
0.045
0.055
0.058
0.068
0.100
0.110
0.020
0.029
0.819
0.840
0.590
0.620
0.065
0.080
0.770
0.799
0.660
0.690
0.15 BSC
0.780
0.840
0.083
0.102
0.210
0.244
0.100
0.180
0.004
―
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
20110119a
2-5
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
3-5
FII 30-06D
10
1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
IGBT
ZthJH[K/W]
0.01
0.001
100
t (s)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
4-5
FII 30-06D
Diode
40
2000
A
nC
30
IF
40
TVJ= 100°C
VR = 300V
1500
30
IRM
Qr
TVJ=150°C
TVJ= 100°C
VR = 300V
A
TVJ=100°C
TVJ= 25°C
20
1000
10
0
IF= 30A
IF= 15A
IF= 7.5A
500
0
1
2
10
0
100
V
A/µs 1000
-diF/dt
VF
Forward current IF versus VF
0
0
120
trr
1.5
TVJ= 100°C
V IF = 15A
600 A/µs
800 1000
-diF/dt
1.6
VFR
µs
VFR
15
110
Kf
IF= 30A
IF= 15A
IF= 7.5A
100
1.0
IRM
400
20
TVJ= 100°C
VR = 300V
ns
200
Peak reverse current IRM
versus -diF/dt
Reverse recovery charge Qr
versus -diF/dt
2.0
1.2
tfr
10
tfr
0.8
90
Qr
0.5
IF= 30A
IF= 15A
IF= 7.5A
20
5
80
0.4
15-06A
0.0
0
40
80
70
120 °C 160
0
200
400
TVJ
600
800 1000
A/µs
0
0
200
-diF/dt
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt
400
0.0
600 A/µs
800 1000
diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
10
(ZthJH is measured using 50
µm thermal grease)
1
D=
D=
D=
D=
D=
D=
D=
D=
0.00001
0.0001
0.001
0.01
t(s)
0.1
1
10
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.1
FRED
ZthJH [K/W]
0.01
0.001
100
Transient thermal resistance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
5-5