FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE(sat) typ = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 1200 V ± 20 V 33 20 A A 40 VCES A 10 µs 150 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 2.9 V V 6.5 V 0.2 mA mA 200 nA 0.2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 68 Ω 205 105 320 175 4.1 1.5 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A 1.2 100 nF nC RthJC RthJH with heat transfer paste 1.2 0.8 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier 0549 IGBTs 1-4 FII 30-12E Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF90 TC = 25°C TC = 90°C 25 15 Symbol Conditions Characteristic Values min. typ. max. VF IF = 20 A; TVJ = 25°C TVJ = 125°C IRM t rr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC RthCH (per diode) with heat transfer paste 2.5 1.9 Conduction A A 3.0 V V 16 130 A ns 3.6 2.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.09 V; R0 = 85 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 32 mΩ Thermal Response Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 20...120 N IGBT (typ.) Cth1 = 0.049 J/K; Rth1 = 0.15 K/W Cth2 = 0.133 J/K; Rth2 = 0.65 K/W Free Wheeling Diode (typ.) Cth1 = 0.021 J/K; Rth1 = 0.63 K/W Cth2 = 0.052 J/K; Rth2 = 1.67 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 40 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved mm mm 9 g 0549 1.7 5.5 pF 2-4 FII 30-12E 80 60 A 50 VGE = 17 V A IC 15 V 60 VGE = 17 V IC 15 V TVJ = 125°C 13 V 40 TVJ = 25°C 13 V 40 30 11 V 11 V 20 20 9V 9V 10 0 0 0 1 2 3 4 0 V 6 5 1 2 3 4 VCE 5 6 V VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 50 80 VCE = 20 V A IC IF 60 40 A 30 TVJ = 25°C 40 TVJ = 125°C TVJ = 125°C TVJ = 25°C 20 20 10 0 0 0 5 10 15 V 0 20 1 2 3 Fig. 3 Typ. transfer characteristics VCE = 600 V IC = 20 A 12 4 Fig. 4 Typ. forward characteristics of free wheeling diode 15 V V VF VGE IRM VGE 40 200 A ns 150 30 trr trr 9 100 20 6 TVJ = 125°C VR = 600 V IF = 15 A 10 3 50 IRM FII30-12E 0 0 20 40 60 80 nC 100 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 0549 0 3-4 FII 30-12E 20 4.0 250 td(on) mJ 16 ns t V CE = 600 V V GE = ±15 V 12 150 R G = 68 Ω TVJ = 125°C 8 3.5 mJ 200 tr E on 100 4 400 td(off) 50 E off 3.0 300 2.5 V CE = 600 V V GE = ±15 V 250 2.0 R G = 68 Ω T VJ = 125°C 200 1.5 0 0 0 10 20 30 A 1.0 100 E off 0 10 20 IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 10 2.5 mJ mJ 8 E off 2.0 6 1.5 V CE = 600 V V GE = ±15 V IC = 20 A T VJ = 125°C 4 2 0 0 50 100 150 200 Ω 250 1250 V CE = 600 V V GE = ±15 V IC = 20 A TVJ = 125°C 1000 t td(off) 750 1.0 500 0.5 250 tf 0.0 0 50 100 0 200 Ω 250 150 RG Fig. 9 Typ. turn on energy vs gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 80 10 A K/W 60 Z thJC diode 1 IGBT 0.1 R G = 68 Ω TVJ = 125°C 40 ns Eoff RG ICM 0 40 A 30 IC Eon 50 tf 0.0 40 t 150 0.5 Eon ns 350 0.01 20 single pulse 0.001 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 FII30-12E 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 0549 0 4-4