ETC FZT2907A

FZT2907
FZT2907A
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT2907
FMMT2907A
MIN.
MIN.
MAX.
UNIT
CONDITIONS.
MAX.
Output Capacitance
Cobo
8
8
pF
VCB=-10V, IE=0,
f=100KHz
Input Capacitance
Cibo
30
30
pF
VBE=-2V, IC=0
f=100KHz
Turn On Time
ton
50
50
ns
VCE=-30V
IC=-150mA, IB1=-15mA
(See Turn On Circuit)
Turn Off Time
toff
110
110
ns
VCE=-6V, IC=-150mA
IB1= IB2=-15mA
(See Turn Off Circuit)
TURN ON TIME – TEST CIRCUIT
-30V
ISSUE 4 – JUNE 1996
FEATURES
* 60 Volt VCEO
* Fast switching
✪
PARTMARKING DETAIL –
FZT2907 – FZT2907
FZT2907A – FZT2907A
-16V
Scope:
Rise Time < 5 ns
50Ω
Pulse width
<200ns
TURN OFF TIME – TEST CIRCUIT
15V
1KΩ
1KΩ
0
-30V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
FMMT2907
FMMT2907A
-40
V
-60
V
Emitter-Base Voltage
VEBO
-5
V
IC
-600
mA
Power Dissipation at Tamb=25°C
Ptot
1.5
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
-6V
37Ω
Scope:
Rise Time < 5 ns
SYMBOL
FZT2907
MIN.
FZT2907A
MAX. MIN.
UNIT CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-40
-60
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
-60
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-5
V
IE=-10µA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector Cut-Off
Current
ICBO
-20
-20
-10
-10
µA
nA
VCB=-50V, IE=0
VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current IB
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-1.6
-0.4
-1.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.3
-2.6
-1.3
-2.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
35
50
75
100
30
200
300
75
100
100
100
50
200
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
300
MHz
IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
3 - 299
UNIT
-60
Continuous Collector Current
50Ω
Pulse width
<200ns
E
C
B
PARAMETER
0
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
200Ω
1KΩ
FZT2907
FZT2907A
SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
3 - 298
FZT2907
FZT2907A
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT2907
FMMT2907A
MIN.
MIN.
MAX.
UNIT
CONDITIONS.
MAX.
Output Capacitance
Cobo
8
8
pF
VCB=-10V, IE=0,
f=100KHz
Input Capacitance
Cibo
30
30
pF
VBE=-2V, IC=0
f=100KHz
Turn On Time
ton
50
50
ns
VCE=-30V
IC=-150mA, IB1=-15mA
(See Turn On Circuit)
Turn Off Time
toff
110
110
ns
VCE=-6V, IC=-150mA
IB1= IB2=-15mA
(See Turn Off Circuit)
TURN ON TIME – TEST CIRCUIT
-30V
ISSUE 4 – JUNE 1996
FEATURES
* 60 Volt VCEO
* Fast switching
✪
PARTMARKING DETAIL –
FZT2907 – FZT2907
FZT2907A – FZT2907A
-16V
Scope:
Rise Time < 5 ns
50Ω
Pulse width
<200ns
TURN OFF TIME – TEST CIRCUIT
15V
1KΩ
1KΩ
0
-30V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
FMMT2907
FMMT2907A
-40
V
-60
V
Emitter-Base Voltage
VEBO
-5
V
IC
-600
mA
Power Dissipation at Tamb=25°C
Ptot
1.5
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
-6V
37Ω
Scope:
Rise Time < 5 ns
SYMBOL
FZT2907
MIN.
FZT2907A
MAX. MIN.
UNIT CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-40
-60
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
-60
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-5
V
IE=-10µA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector Cut-Off
Current
ICBO
-20
-20
-10
-10
µA
nA
VCB=-50V, IE=0
VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current IB
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-1.6
-0.4
-1.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.3
-2.6
-1.3
-2.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
35
50
75
100
30
200
300
75
100
100
100
50
200
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
300
MHz
IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
3 - 299
UNIT
-60
Continuous Collector Current
50Ω
Pulse width
<200ns
E
C
B
PARAMETER
0
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
200Ω
1KΩ
FZT2907
FZT2907A
SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
3 - 298