FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) 255 ns VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2) SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR ISSUE 2 - MARCH 1995 FMMT4402 FMMT4403 ✪ PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 A Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4402 PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO -40 -40 V IC=-1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO -40 -40 V IC=-0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO -5 -5 V IE=-0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX -0.1 -0.1 µA VCE=-35V Base Cut-Off Current IBEX -0.1 -0.1 µA VCE=-35V Static Forward Current TransferRatio hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) -0.75 Transition Frequency fT 150 Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V IC=0, f=100kHz 30 50 50 20 MAX. FMMT4403 150 MIN. 30 60 100 100 20 -0.4 -0.75 -0.95 -1.3 -0.75 MAX. VEB(off) =-0.4V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC=-500mA,VCE=-2V* -0.4 -0.75 V V IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA* -0.95 -1.3 V V IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA 200 PAGE NUMBER VEB(off) =-0.4V 300 MHz IC=-20mA,VCE=-10V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER UNIT CONDITIONS FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) 255 ns VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2) SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR ISSUE 2 - MARCH 1995 FMMT4402 FMMT4403 ✪ PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 A Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4402 PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO -40 -40 V IC=-1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO -40 -40 V IC=-0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO -5 -5 V IE=-0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX -0.1 -0.1 µA VCE=-35V Base Cut-Off Current IBEX -0.1 -0.1 µA VCE=-35V Static Forward Current TransferRatio hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) -0.75 Transition Frequency fT 150 Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V IC=0, f=100kHz 30 50 50 20 MAX. FMMT4403 150 MIN. 30 60 100 100 20 -0.4 -0.75 -0.95 -1.3 -0.75 MAX. VEB(off) =-0.4V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC=-500mA,VCE=-2V* -0.4 -0.75 V V IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA* -0.95 -1.3 V V IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA 200 PAGE NUMBER VEB(off) =-0.4V 300 MHz IC=-20mA,VCE=-10V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER UNIT CONDITIONS