SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 MARCH 1995 FMMT4125 ✪ PARTMARKING DETAIL ZD E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current IC -200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter SaturationVoltage Static Forward Current Transfer Ratio Transistion Frequency Output Capacitance Input Capacitance Noise Figure Small Signal Current Transfer SYMBOL V(BR)CBO MIN. -30 V(BR)CEO V(BR)EBO MAX. UNIT V CONDITIONS. IC=-10µA -30 V IC=-1mA* -4 V IE=-10µA ICBO IEBO VCE(sat) -50 -50 0.4 nA nA V VCB=-20V VEB=-3V IC=-50mA, IB=-5mA* VBE(sat) 0.95 V IC=-50mA, IB=-5mA* MHz pF pF dB IC=-2mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-10mA, VCE=-20V, f=100MHz VCB=-5V, IE=0, f=140KHz VBE=-0.5V, IE=0, f=140KHz IC=-200µA, VCE=-5V, Rg=-2kΩ f=30Hz to 15KHz at 3dB points IC=-2mA, VCE=-1V, f=1KHz hFE fT Cobo Cibo N hfe 50 25 200 150 4.5 10 5 50 200 SWITCHING CHARACTERISTICS (at Tamb = 25°C). PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL td tr ts tf TYP. 25 18 140 15 UNIT ns ns ns ns CONDITIONS VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA VCC=-3V, IC=-10mA IB1=IB2=-1mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%