GM71C(S)4400C/CL LG Semicon Co.,Ltd. 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM Description Features The GM71C(S)4400C/CL is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71C(S)4400C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)4400C/CL offers Fast Page Mode as a high speed access Mode. Multiplexed address inputs permit the GM71C(S)4400C/CL to be packaged in a standard 300mil 20(26) pin plastic SOJ and standard 300mil 20(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. * 1,048,576 Words x 4 Bit Organization * Fast Page Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time Pin Configuration 20 (26) SOJ (Unit: ns) tRAC tCAC tRC tPC GM71C(S)4400C/CL-60 60 15 110 40 GM71C(S)4400C/CL-70 70 20 130 45 GM71C(S)4400C/CL-80 80 20 150 50 * Low Power Active : 605/550/495mW (MAX) Standby : 5.5mW (CMOS level : MAX) 1.1mW (L-version) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 1024 Refresh Cycles/16ms * 1024 Refresh Cycles/128ms (L-version) * Battery Back Up Operation (L-version) 20 (26) TSOP II I/O1 VSS I/O1 1 20 VSS VSS 20 1 I/O2 I/O4 I/O2 2 19 I/O4 I/O4 19 2 I/O2 WE I/O3 WE 3 18 I/O3 I/O3 18 3 WE RAS CAS A9 I/O1 RAS 4 17 CAS CAS 17 4 RAS OE A9 5 16 OE OE 16 5 A9 A0 6 15 A8 A0 6 15 A8 A8 15 6 A0 A1 7 14 A7 A1 7 14 A7 A7 14 7 A1 A2 8 13 A6 A2 8 13 A6 A6 13 8 A2 A3 9 12 A5 A3 9 12 A5 A5 12 9 A3 VCC 10 11 A4 VCC 10 11 A4 A4 11 10 VCC NORMAL TYPE (Top View) REVERSE TYPE (Top View) 1 GM71C(S)4400C/CL LG Semicon Pin Description Pin Function Pin Function A0-A9 Address Inputs WE Read/Write Enable A0-A9 Refresh Address Inputs OE Output Enable Data Input / Data Output VCC Power (+5V) RAS Row Address Strobe VSS Ground CAS Column Address Strobe I/O1-I/O4 Ordering Information Type No. Access Time Package GM71C(S)4400CJ/CLJ-60 GM71C(S)4400CJ/CLJ-70 GM71C(S)4400CJ/CLJ-80 60ns 70ns 80ns 300 Mil, 20 (26) Pin Plastic SOJ GM71C(S)4400CT/CLT-60 GM71C(S)4400CT/CLT-70 GM71C(S)4400CT/CLT-80 60ns 70ns 80ns 300 Mil, 20 (26) Pin Plastic TSOP II (Normal Type) GM71C(S)4400CR/CLR-60 GM71C(S)4400CR/CLR-70 GM71C(S)4400CR/CLR-80 60ns 70ns 80ns 300 Mil, 20 (26) Pin Plastic TSOP II (Reverse Type) Absolute Maximum Ratings* Symbol Parameter Rating Unit 0 ~ 70 C TA Ambient Temperature under Bias TSTG Storage Temperature (Plastic) -55 ~ 125 C VIN/VOUT Voltage on any Pin Relative to VSS -1.0 ~ 7.0 V VCC Voltage on VCC Relative to VSS -1.0 ~ 7.0 V IOUT Short Circuit Output Current 50 mA PD Power Dissipation 1.0 W *Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability. Recommended DC Operating Conditions (TA = 0 ~ 70C) Symbol 2 Parameter Min Typ Max Unit VCC Supply Voltage 4.5 5.0 5.5 V VIH Input High Voltage 2.4 - 6.5 V VIL Input Low Voltage (I/O Pin) -1.0 - 0.8 V VIL Input Low Voltage (Others) -2.0 - 0.8 V GM71C(S)4400C/CL LG Semicon DC Electrical Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C) Symbol Min Max Unit Note Parameter VOH Output Level Output “H” Level Voltage (IOUT = -5mA) 2.4 VCC V VOL Output Level Output “L” Level Voltage (IOUT = 4.2mA) 0 0.4 V ICC1 Operating Current Average Power Supply Operating Current (RAS, CAS, Address Cycling: tRC = tRC min) 60ns - 110 70ns - 100 80ns - 90 - 2 ICC2 ICC3 ICC4 ICC5 ICC6 ICC7 ICC8 Standby Current (TTL) Power Supply Standby Current (RAS, CAS= VIH, DOUT = High-Z) RAS-Only Refresh Current Average Power Supply Current RAS-Only Refresh Mode (RAS Cycling, CAS = VIH, tRC = tRC min) Fast Page Mode Current Average Power Supply Current Fast Page Mode (RAS = VIL, CAS, Address Cycling: tPC = tPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >= VCC - 0.2V , DOUT=High-Z) 60ns - 110 70ns - 100 80ns - 90 60ns - 110 70ns - 100 80ns - 90 - CAS-before-RAS Refresh Current (tRC = tRC min) mA 1, 2 mA mA 2 mA 1, 3 1 mA 5 - 200 uA 4, 5 60ns - 110 70ns - 100 80ns - 90 Battery Back Up Current (Standby with CBR Refresh) (tRC=125us, tRAS<=1us, WE=VIH, CAS=VIL, OE, Address and DIN=VIH or VIL, DOUT=High-Z) - 300 uA 4, 5 Standby Current RAS = VIH CAS = VIL DOUT = Enable - 5 mA 1 mA II(L) Input Leakage Current Any Input (0V<=VIN<=7V) -10 10 uA IO(L) Output Leakage Current (DOUT is Disabled, 0V<=VOUT<=7V) -10 10 uA Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. L-version. 5. VCC-0.2V<=VIH<=6.5V, 0V<=VIL<=0.2V. 3 GM71C(S)4400C/CL LG Semicon Capacitance (VCC = 5V+/-10%, TA = 25C) Symbol Parameter Min Max Unit Note CI1 Input Capacitance (Address) - 5 §Ü 1 CI2 Input Capacitance (Clocks) - 7 §Ü 1 CI/O Data Input, Output Capacitance (Data-In, Out) - 10 §Ü 1, 2 Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable DOUT. AC Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C, Notes 1, 14, 15, 16) Test Conditions Input rise and fall times: 5ns Output load : 2 TTL gate + CL (100§Ü) Input, output timing reference levels: 0.8V, 2.4V (Including scope and jig) Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) Symbol 4 Parameter tRC Random Read or Write Cycle Time tRP GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max 110 - 130 - 150 - ns RAS Precharge Time 40 - 50 - 60 - ns tRAS RAS Pulse Width 60 10,000 70 10,000 80 10,000 ns tCAS CAS Pulse Width 15 10,000 20 10,000 20 10,000 ns tASR Row Address Set-up Time tRAH Row Address Hold Time tASC Column Address Set-up Time tCAH 0 - 0 - 0 - ns 10 - 10 - 10 - ns 0 - 0 - 0 - ns Column Address Hold Time 15 - 15 - 15 - ns tRCD RAS to CAS Delay Time 20 45 20 50 20 60 ns 8 tRAD RAS to Column Address Delay Time 15 30 15 35 15 40 ns 9 tRSH RAS Hold Time 15 - 20 - 20 - ns tCSH CAS Hold Time 60 - 70 - 80 - ns tCRP CAS to RAS Precharge Time 10 - 10 - 10 - ns tODD OE to DIN Delay Time 15 - 20 - 20 - ns tDZO OE Delay Time from DIN 0 - 0 - 0 - ns tDZC CAS Set-up Time from DIN 0 - 0 - 0 - ns tT Transition Time (Rise and Fall) 3 50 3 50 3 50 ns tREF Refresh Period - 16 - 16 - 16 ms Refresh Period (L-version) - 128 - 128 - 128 ms 7 GM71C(S)4400C/CL LG Semicon Read Cycle Symbol Parameter GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max tRAC Access Time from RAS - 60 - 70 - 80 ns 2,3,17 tCAC Access Time from CAS - 15 - 20 - 20 ns 3, 4, 13, 17 tAA Access Time from Address - 30 - 35 - 40 ns 3, 5, 13, 17 tOAC Access Time from OE - 15 - 20 - 20 ns 3,17 tRCS Read Command Setup Time 0 - 0 - 0 - ns tRCH Read Command Hold Time to CAS 0 - 0 - 0 - ns 18 tRRH Read Command Hold Time to RAS 0 - 0 - 0 - ns 18 tRAL Column Address to RAS Lead Time 30 - 35 - 40 - ns tOFF1 Output Buffer Turn-off Time 0 15 0 15 0 15 ns 6 tOFF2 Output Buffer Turn-off Time from OE 0 15 0 15 0 15 ns 6 tCDD CAS to DIN Delay Time 15 - 20 - 20 - ns tOEP OE Pulse width 15 - 20 - 20 - ns Write Cycle Symbol Parameter GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Min Max Min Max Min Max Unit Note 10 tWCS Write Command Setup Time 0 - 0 - 0 - ns tWCH Write Command Hold Time 15 - 15 - 15 - ns tWP Write Command Pulse Width 10 - 10 - 10 - ns tRWL Write Command to RAS Lead Time 15 - 20 - 20 - ns tCWL Write Command to CAS Lead Time 15 - 20 - 20 - ns tDS Data-in Setup Time 0 - 0 - 0 - ns 11 tDH Data-in Hold Time 15 - 15 - 15 - ns 11 5 GM71C(S)4400C/CL LG Semicon Read- Modify-Write Cycle Symbol Parameter tRWC Read-Modify-Write Cycle Time tRWD GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max 150 - 180 - 200 - ns RAS to WE Delay Time 80 - 95 - 105 - ns 10 tCWD CAS to WE Delay Time 35 - 45 - 45 - ns 10 tAWD Column Address to WE Delay Time 50 - 60 - 65 - ns 10 tOEH OE Hold Time from WE 15 - 20 - 20 - ns Refresh Cycle Symbol Parameter GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Min Max Min Max Min Max Unit tCSR CAS Set-up Time (CAS-before-RAS Refresh Cycle) 10 - 10 - 10 - ns tCHR CAS Hold Time (CAS-before-RAS Refresh Cycle) 10 - 10 - 10 - ns tRPC RAS Precharge to CAS Hold Time 10 - 10 - 10 - ns tCPN CAS Precharge Time in Normal Mode 10 - 10 - 10 - ns Note Fast Page Mode Cycle Symbol 6 Parameter GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max tPC Fast Page Mode Cycle Time 40 - 45 - 50 - ns tCP Fast Page Mode CAS Precharge Time 10 - 10 - 10 - ns tRASP Fast Page Mode RAS Pulse Width - 100,000 - 100,000 - 100,000 ns 12 tACP Access Time from CAS Precharge - 35 - 40 - 45 ns 3,13,17 tRHCP RAS Hold Time from CAS Precharge 35 - 40 - 45 - ns tCPW Fast Page Mode Read-Modify-Write Cycle CAS Precharge to WE Delay Time 55 - 65 - 70 - ns tPRWC Fast Page Mode Read-Modify-Write Cycle Time 80 - 95 - 100 - ns 10 GM71C(S)4400C/CL LG Semicon Test Mode Cycle Symbol Parameter GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max tWS Test Mode WE Setup Time 0 - 0 - 0 - ns tWH Test Mode WE Hold Time 10 - 10 - 10 - ns Counter Test Cycle Symbol tCPT Parameter CAS Precharge Time in Counter Test Cycle GM71C(S)4400 GM71C(S)4400 GM71C(S)4400 C/CL-60 C/CL-70 C/CL-80 Unit Note Min Max Min Max Min Max 40 - 40 - 40 - ns Notes: 1. AC Measurements assume tT = 5ns. 2. Assumes that tRCD<=tRCD(max) and tRAD<=tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC exceeds the value shown. 3. Measured with a load circuit equivalent to 2TTL loads and 100§Ü. 4. Assumes that tRCD>=tRCD(max) and tRAD<=tRAD(max). 5. Assumes that tRCD<=tRCD(max) and tRAD>=tRAD(max). 6. tOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to output voltage levels. 7. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH and VIL. 8. Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. 9. Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is controlled exclusively by tAA. 7 LG Semicon GM71C(S)4400C/CL 10. tWCS, tRWD, tCWD tCPW and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only; if tWCS >=tWCS(min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD>=tRWD(min), tCWD>=tCWD(min), tAWD>=tAWD(min) and tCPW>=tCPW(min), the cycle is a readmodify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 11. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in delayed write or a read modify write cycle. 12. tRASP defines RAS pulse width in fast page mode cycles. 13. Access time is determined by the longer of tAA or tCAC or tACP. 14. An initial pause of 100us is required after power up followed by a minimum of eight initialization cycles (RAS only refresh cycle or CAS before RAS refresh cycle). If the internal refresh counter is used, a minimum of eight CAS before RAS refresh cycles is required. 15. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. 16. Test mode operation specified in this data sheet is 2-bit test function controlled by control address bits - - - CA0. This test mode operation can be performed by WE-and-CAS-before-RAS (WCBR) refresh cycle. Refresh during test mode operation will be performed by normal read cycles or by WCBR refresh cycles. When the state of two test bits accord each other, the condition of the output data is low level. In order to end this test mode operation, perform a RAS only refresh cycle or a CAS-before-RAS refresh cycle. 17. In a test mode read cycle, the value of tRAC, tAA, tCAC, tOAC and tACP is delayed for 2ns to 5ns for the specified value. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 8 GM71C(S)4400C/CL LG Semicon Package Dimension Unit: Inches (mm) 20 (26) SOJ 0.275(6.99) MAX 0.260(6.60) MIN 0.330(8.38) MIN 0.340(8.64) MAX 0.295(7.49) MIN 0.305(7.75) MAX 0.025(0.63) MIN 0.039(1.00) MAX 0.008(0.20) 0.085(2.16) MIN 0.103(2.61) MAX 0.661(16.80) MIN 0.669(17.00) MAX 0.128(3.25) MIN 0.148(3.76) MAX 0.050(1.27) TYP 0.026(0.66) MIN 0.036(0.91) MAX 0.015(0.38) MIN 0.021(0. 53) MAX 20 (26) TSOP II 0.012(0.30) MIN 0.028(0.70) MAX 0.355(9.02) MIN o 0.371(9.42) MAX 0.292(7.42) MIN 0.308(7.82) MAX 0~8 0.009(0.22) MAX 0.667(16.94) MIN 0.690(17.54) MAX 0.041(1.03) MIN 0.048(1.23) MAX 0.012(0.30) MIN 0.020(0.50) MAX 0.050(1.27) TYP 0.001(0.03) MIN 0.009(0.23) MAX 23