H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18 - Dimensions in mm 2.54 APPROVALS FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 6 5 3 4 1.54 8.8 8.4 0.5 7.8 7.4 4.3 4.1 0.5 DESCRIPTION The H11B_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. 1 2 0.3 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 105mW l OPTION G OPTION SM SURFACE MOUNT OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 50V 5V 150mW POWER DISSIPATION 5.08 max. 1.2 0.6 10.2 9.5 1.4 0.9 Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C) 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92167-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 10 Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) HFE Collector-emitter Dark Current (ICEO) 30 30 5 100 Current Transfer Ratio ( CTR )(Note 2) H11B1 500 H11B2 200 H11B3 100 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Turn on Time Output Turn off Time V V µA IF = 10mA IR = 10µA VR = 3V V V V nA IC = 1mA (note 2) IC = 100µA IE = 100µA VCE = 5V, IC = 5mA VCE = 10V % % % 1mA IF , 5V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE V 1mA IF , 1mA IC VRMS VPK Ω (note 1) (note 1) VIO = 500V (note 1) µs µs VCC= 10V, IC = 10mA, RL = 100Ω , fig.1 16K Collector-emitter Saturation VoltageVCE(SAT) Note 1 Note 2 1.5 1.0 5300 7500 5x1010 ton toff 125 100 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input 100Ω ton toff IC = 10mA tr Input 7/12/00 Output tf Output 10% 10% 90% 90% DB92167-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 10000 5000 Current transfer ratio CTR (%) Collector power dissipation P C (mW) 200 150 100 50 0 1000 800 500 100 50 VCE = 5V TA = 25°C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature TA = 25°C 20 Collector current I C (mA) 80 Forward current I F (mA) 10 20 50 100 50mA 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) IF = 1mA IC = 1mA 1.0 2 3 4 5 Normalised Current Transfer Ratio vs. Ambient Temperature Normalised current transfer ratio 1.2 1 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 5 Collector Current vs. Collector-emitter Voltage 100 Collector-emitter saturation voltage V 2 Forward current IF (mA) Ambient temperature TA ( °C ) 0.8 0.6 0.4 0.2 0 1.5 IF = 1mA VCE = 5V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 1 100 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB92167-AAS/A2