N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2328S █ AUDIO POWER AMPLFIER APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………30V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………………30V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Typ Unit Test Conditions 30 V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage 30 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=1mA，IC=0 ICBO Collector Cut-off Current 100 nA VCB=30V, IE=0 IEBO Emitter-Base Cut-off Current 100 nA VEB=5V, IC=0 HFE DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage 2 V IC=1.5mA, IB=30mA VBE(ON) Base-Emitter On Voltage 1 V VCE=2V, IC=500mA fT Current Gain-Bandwidth Product 120 MHz VCE=2V, IC=500mA Cob Collector-Base Capacitance 30 pF VCB=10V, IE=0，F=1MHz 100 Max 320 █ hFE Classification O Y 100—200 160—320 VCE=2V, IC=500mA