N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337 █ SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Collector，C 2―Base，B 3―Emitter，E VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………45V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………800mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Typ Unit Test Conditions 50 V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage 45 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 ICES Collector Cut-off Current nA VCE=45V, VBE=0 HFE DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage 0.7 V IC=500mA, IB=50mA VBE(ON) Base-Emitter On Voltage 1.2 V VCE=1V, IC=300mA fT Current Gain-Bandwidth Product 100 MHz Ccbo Collector-Base Capacitance 12 pF 2 100 Max 100 630 VCE=1V, IC=100mA █ hFE Classification 16 25 40 100—250 160—400 250—630 VCE=5V, IC=10mA VCB=10V, IE=0 F=1MHz N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337