NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H549 █ APPLICATIONS Switching and Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW VCBO ——Collector-Base Voltage ………………………………30V 1―Collector，C 2―Base，B 3―Emitter，E VCEO ——Collector-Emitter Voltage……………………………30V VE B O ——Emitter -Base Voltage………………………………5V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ３０ Ｖ IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ３０ Ｖ ＩＣ＝１ｍＡ，ＩＢ＝０ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ ＩＥ＝１ｍＡ，ＩＣ＝０ ICBO Collector Cut-off Current １５ HFE DC Current Gain １１０ ８００ VCE(sat1) Collector- Emitter Saturation Voltage ９０ ２５０ ｍＶ ＩＣ＝１０ｍＡ， ＩＢ＝０．５ｍＡ VCE(sat2) ２００ ６００ ｍＶ ＩＣ＝１００ｍＡ， ＩＢ＝５ｍＡ VBE(sat1) Base-Emitter Saturation Voltage ０．７ １ Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝０．５ｍＡ VBE(sat2) ０．９ １．２ Ｖ ＩＣ＝１００ｍＡ， ＩＢ＝５ｍＡ ５８０ ６６０ ７００ ｍＶ ＶＣＥ＝５Ｖ， ＩＣ＝２ｍＡ ｎＡ VCB=30V, IE=0 ＶＣＥ＝５Ｖ， ＩＣ＝２ｍＡ VBE(on) Base-Emitter On Voltage fT Current Gain-Bandwidth Product ３００ ＭＨｚ ＶＣＥ＝５Ｖ，ＩＣ＝１０ｍＡ Cob Output Capacitance ２．５ ｐＦ ＶＣＢ＝１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ NF Noise Figure １．２ ４ ｄＢ ＶＣＥ＝５Ｖ，ＩＣ＝０．２ｍＡ， ｆ＝１ＫＨｚ，ＲＧ＝２ＫO █ hFE Classification Ａ 110—220 Ｂ 200—450 Ｃ 420—800 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H549