HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318(Z) 1st. Edition December 1999 Features • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz) Low 3rd-order intercept point (IP3in=-0.5dBm typ, @1489MHz) Small surface mount package (MPAK-6) Outline MPAK–6 This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of As,which is a component of GaAs, is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Aer. And it should never be thrown out with general industrial or domestic wastes. HA22040 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Supply voltage Vdd 5 V Maximum current Idd 15 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +125 °C Operation temperature Topr –20 to +70 °C Maximum input power Pin max +15 dBm Electrical Characteristics (Ta = 25°C, Vdd = 2.7V) Item Symbol Min Typ Max Unit Test Conditions Quiescent current Idd 3.5 6 8.5 mA No signal Conversion gain CG 8.5 10.5 12.5 dB f=1489MHz, fLo=1619MHz, PLo=-12dBm, IF=130MHz, Pin=-30dBm Noise figure NF — 4.5 6 dB f=1489MHz,fLo=1619MHz, PLo=-12dBm,IF=130MHz Typical Performance (Ta = 25°C, Vdd = 2.7V) Item Symbol Typ Unit Test Conditions VSWR (input) VSWR in 1.5 — f = 1.489 GHz 3rd order intercept point IP3in -0.5 dBm f = 1.489 GHz, fud =1.490 Ghz, Pin=-30dBm,fLo=1.619GHz, PLo=-12dBm 2 HA22040 Pin Arrangement 1 Mark type : GH Yearly code : a to d Monthly code : e to h 6 f 2 g h GH e 3 a b 5 c d 4 Top View Yearly code Year a Monthly code Mark b c 1999 2000 2001 2002 d Month e Mark f g h January February March April May June July August September October November December Pin No. Pin name Function 1 IF out IF output 2 Cs Bypath capacitor 3 RF in RF input 4 Vdd Voltage supply 5 GND Ground 6 Lo in Local input 3 HA22040 Block Diagram 5.6nH Vdd 4 3 5 2 6 1 1pF RF in 2200pF Cs Lo in 1.5pF 3.3nH 2200pF 20pF 330nH 180nH IFout 8pF Vdd 2200pF 4 HA22040 Main Characteristics Output power,3rd Order Intermodulation Distortion vs.Input power 0 Current vs. Input Power 9 Vdd=2.7V Ta=+25°C RF=1489MHz Lo=1619MHz,-12dBm 8 Current Idd (mA) Output Power Pout (dBm) 20 Pout -20 im3 -40 -60 Vdd=2.7V Ta=+25°C RF=1489MHz Lo=1619MHz,-12dBm 7 6 5 4 3 -80 -60 -50 -40 -30 -20 -10 0 -60 10 Conversion Gain,3rd Order intercept Point vs. Local Power 15 10 -20 -10 0 10 Noise Figure,Current vs. Local Power 9 Vdd=2.7V,Ta=+25°C RF=1489MHz,-30dBm Lo=1619MHz -40 -30 Input Power Pin (dBm) CG Noise Figure NF (dB) Current Idd (mA) Conversion Gain CG (dB) 3rd order Intercept Point(input) IP3in (dBm) Input Power Pin (dBm) -50 5 IP3in 0 -5 8 Vdd=2.7V,Ta=+25°C RF=1489MHz Lo=1619MHz 7 Idd 6 5 NF 4 3 -10 -30 -25 -20 -15 -10 -5 0 Local Power PLo (dBm) 5 -30 -25 -20 -15 -10 -5 0 5 Local Power PLo (dBm) 5 Conversion Gain,3rd Order Intercept Point vs. Frequency 15 Vdd=2.7V,Ta=+25°C RF=-30dBm Lo=-12dBm(IF=130MHz) Noise Figure,Current vs. Frequency 9 CG 10 5 IP3in 0 Noise Figure NF (dB) Current Idd (mA) Conversion Gain CG (dB) 3rd Order Intercept Point(input) IP3in (dBm) HA22040 8 7 Idd 6 5 4 3 1475 1480 1485 1490 1495 1500 1505 Frequency RF (MHz) Frequency RF (MHz) VSWR(Lo) vs. Frequency VSWR(RF) vs. Frequency 3 Vdd=2.7V Ta=+25°C Lo=1619MHz,-12dBm Vdd=2.7V Ta=+25°C 2.5 VSWRlo 2.5 VSWRrf NF -5 1475 1480 1485 1490 1495 1500 1505 3 2 2 1.5 1.5 6 Vdd=2.7V Ta=+25°C Lo=-12dBm(IF=130MHz) 1 1475 1480 1485 1490 1495 1500 1505 1 1605 1610 1615 1620 1625 1630 1635 Frequency RF (MHz) Local Frequency Lo (MHz) Conversion Gain, 3rd Order Intercept Point vs. Supply Voltage 15 Ta=+25°C RF=1489MHz,-30dBm Lo=1619MHz,-12dBm 9 CG 10 5 IP3in 0 -5 2.25 2.5 2.75 3 Noise Figure, Current vs. Supply Voltage Noise Figure NF (dB) Current Idd (mA) Conversion Gain CG (dB) 3rd Order Interceptpoint(input) IP3in (dBm) HA22040 3.25 8 Ta=+25°C RF=1489MHz Lo=1619MHz,-12dBm 7 Idd 6 NF 5 4 3 2.25 3.5 3 Ta=+25°C RF=1489MHz,-30dBm Lo=1619MHz,-12dBm 3.25 3.5 Ta=+25°C Lo=1619MHz 2.5 VSWRlo 2.5 VSWRrf 3 VSWR(Lo) vs. Supply Voltage VSWR(RF) vs. Supply Voltage 2 2 1.5 1.5 1 2.25 2.75 Supply Voltage Vdd (V) Supply Voltage Vdd (V) 3 2.5 2.5 2.75 3 3.25 Supply Voltage Vdd (V) 3.5 1 2.25 2.5 2.75 3 3.25 3.5 Supply Voltage Vdd (V) 7 Conversion Gain, 3rd order Intercept Point vs. Ambient Temperature 15 Noise Figure, Current vs. Ambient Temperature 9 Vdd=2.7V RF=1489MHz,-30dBm Lo=1619MHz,-12dBm CG Noise Figure NF (dB) Current Idd (mA) Conversion Gain CG (dB) 3rd Order Intercept point(input) IP3in (dBm) HA22040 10 5 IP3in 0 -5 8 Vdd=2.7V RF=1489MHz Lo=1619MHz,-12dBm 7 Idd 6 NF 5 4 3 -25 0 25 50 -25 75 3 Vdd=2.7V RF=1489MHz Lo=1619MHz,-12dBm 2.5 75 Vdd=2.7V Lo=1619MHz 2.5 VSWRlo VSWRrf 50 VSWR(Lo) vs. Ambient Temperature VSWR(RF) vs. Ambient Temperature 2 1.5 -25 2 1.5 1 0 25 50 Ambient Temperature Ta (°C) 8 25 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) 3 0 75 1 -25 0 25 50 Ambient Temperature Ta (°C) 75 HA22040 Package Dimentions Unit: mm 1.9 ± 0.2 0.95 0.15 + 0.1 – 0.05 0 – 0.1 2.8 + 0.2 – 0.3 + 0.2 0.6 1.6 – 0.1 0.6 0.95 + 0.1 6 – 0.3 – 0.05 + 0.2 1.1 – 0.1 0.3 2.9 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-6 — — 0.014 g 9 HA22040 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items. 10 HA22040 Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. 11