HCS241MS Radiation Hardened Inverting Octal Three-State Buffer/Line Driver September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) AE 1 AI1 2 19 BE BO4 3 18 AO1 AI2 4 17 BI4 BO3 5 16 AO2 AI3 6 15 BI3 BO2 7 14 AO3 AI4 8 13 BI2 • Significant Power Reduction Compared to LSTTL ICs BO1 9 12 AO4 • DC Operating Voltage Range: 4.5V to 5.5V GND 10 • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse • Latch Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Input Logic Levels - VIL = 30% VCC Max - VIH = 70% VCC Min 20 VCC 11 BI1 20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH C TOP VIEW • Input Compatibility Levels Ii ≤ 5µA at VOL, VOH AE 1 20 VCC AI1 2 19 BE The Intersil HCS241MS is a Radiation Hardened inverting octal three-state buffer/line driver with two output enables, one active low, and one active high. BO4 3 18 AO1 AI2 4 17 BI4 BO3 5 16 AO2 The HCS241MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. AI3 6 15 BI3 BO2 7 14 AO3 AI4 8 13 BI2 BO1 9 12 AO4 GND 10 11 BI1 Description The HCS241MS is supplied in a 20 lead ceramic flatpack (K suffix) or a SBDIP package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCS241DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP HCS241KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack HCS241D/Sample +25oC Sample 20 Lead SBDIP HCS241K/Sample +25oC Sample 20 Lead Ceramic Flatpack HCS241HMSR +25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 302 Spec Number File Number 518838 3122.1 HCS241MS Functional Diagram AO1 18 N P AO2 16 N P AO3 14 N AO4 12 P N P BO1 9 BO2 7 BO3 5 BO4 3 P P P P N N N N 19 BE 1 AE 2 AI1 4 AI2 6 AI3 8 AI4 11 BI1 13 BI2 15 BI3 17 BI4 TRUTH TABLE INPUTS OUTPUT INPUTS OUTPUT AE AIn AOn BE BIn BOn L L L L X Z L H H H L L H X Z H H H H = High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance Spec Number 303 518838 Specifications HCS241MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 1 +25oC 7.2 - 2, 3 +125oC, -55oC 6.0 - 1 +25oC -7.2 - 2, 3 +125oC, -55oC -6.0 - VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50µA 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50µA 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50µA 1, 2, 3 +25oC, +125oC, -55oC VCC0.1 - V VCC = 5.5V, VIH = 3.85V, VIL = 1.35V, IOH = -50µA 1, 2, 3 +25oC, +125oC, -55oC VCC0.1 - V 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 1 +25oC - ±1.0 2, 3 +125oC, -55oC - ±50 7, 8A, 8B +25oC, +125oC, -55oC - - SYMBOL ICC IOL IOH VOL VOH IIN IOZ FN CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 (Note 2) VCC = VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0 (Note 2) VCC = 5.5V VIN = VCC or GND VCC = 5.5V, Force Voltage = 0V or VCC VCC = 4.5V, VIH = 3.15V, VIL = 1.35V (Note 3) LIMITS mA mA µA - NOTES: 1. All voltages referenced to device GND. 2. Force/Measure function may be interchanged. 3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 304 518838 Specifications HCS241MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Propagation Delay Propagation Delay Propagation Delay Propagation Delay Propagation Delay SYMBOL TPLH1 TPHL1 TPZL1 TPZL2 TPLZ1 TPLZ2 TPZH1 TPZH2 TPHZ1 TPHZ2 (NOTES 1, 2) CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 21 ns 10, 11 +125oC, -55oC 2 25 9 +25oC 2 21 10, 11 +125oC, -55oC 2 25 9 +25oC 2 25 10, 11 +125oC, -55oC 2 30 9 +25oC 2 25 10, 11 +125oC, -55oC 2 30 9 +25oC 2 20 10, 11 +125oC, -55oC 2 24 9 +25oC 2 25 10, 11 +125oC, -55oC 2 30 VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0 VCC = 4.5V, VIH = 4.5V, VIL = 0 VCC = 4.5V, VIH = 4.5V, VIL = 0 VCC = 4.5V, VIH = 4.5V, VIL = 0 LIMITS ns ns ns ns ns NOTES: 1. All voltage referenced to GND. 2. Measurements made with CL = 50pF, RL = 500Ω, Input TR = TF = 3ns TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance Output Capacitance CIN COUT CONDITIONS NOTE TEMPERATURE MIN MAX UNITS 1 +25oC - 36 pF 1 +125oC, -55oC - 59 pF 1 +25oC - 10 pF 1 +125oC, -55oC - 10 pF 1 +25oC - 20 pF 1 +125oC, -55oC - 20 pF VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics. Spec Number 305 518838 Specifications HCS241MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current Output Current (Sink) (NOTES 1, 2) CONDITIONS SYMBOL ICC IOL 200K RAD LIMITS TEMPERATURE MIN MAX UNITS VIN = 5.5V, VIN = VCC or GND +25oC - 0.75 mA VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 +25oC 6 - mA -6 - mA - 0.1 V - 0.1 V VCC0.1 - V VCC0.1 - V Output Current (Source) IOH VCC = VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0 +25oC Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50µA +25oC VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50µA Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50µA +25oC VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50µA Three-State Output Leakage Current IOZ VCC = 5.5V, Force Voltage = 0V or VCC +25oC - ±50 µA Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA VCC = 4.5V, VIL = 3.15V, VIH = 1.35V, (Note 2) +25oC - - - TPLH1 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 25 ns TPHL1 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 25 ns TPZL1 TPZL2 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 30 ns TPLZ1 TPLZ2 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 30 ns TPZH1 TPZH2 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 24 ns TPHZ1 TPHZ2 VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 30 ns Noise Immunity Functional Propagation Delay FN NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 +12µA IOL/IOH 5 -15% of 0 Hour IOZ 5 ±200nA PARAMETER Spec Number 306 518838 Specifications HCS241MS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H, IOZL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H, IOZL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H, IOZL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H, IOZL/H Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 20 - - - 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20 - - 3, 5, 7, 9, 12, 14, 16, 18 19, 20 2, 4, 6, 8, 11, 13, 15, 17 - STATIC BURN-IN I TEST CONDITIONS (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 1, 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 10 DYNAMIC BURN-IN TEST CONNECTIONS (Note 1) - 1, 10 NOTES: 1. Each pin except VCC and GND will have a series resistor of 10KΩ ± 5%. 2. Each pin except VCC and GND will have a series resistor of 680Ω ± 5% TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 3, 5, 7, 9, 12, 14, 16, 18 10 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20 NOTE: Each pin except VCC and GND will have a series resistor of 47KΩ ± 5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures. Spec Number 307 518838 HCS241MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 308 518838 HCS241MS Propagation Delay Timing Diagram and Load Circuit DUT VIH VS INPUT TEST POINT CL RL CL = 50pF VSS RL = 500Ω TPLH TPHL VOH VS OUTPUT AC VOLTAGE LEVELS VOL ACTS UNITS VCC PARAMETER 4.50 V VIH 4.50 V VIL 0.0 V VS 2.25 V GND 0.00 V Three-State High Timing Diagram and Load Circuit DUT TEST POINT VIH VS INPUT CL RL CL = 50pF VSS RL = 500Ω TPZH TPHZ VOH VT OUTPUT VW THREE-STATE HIGH VOLTAGE LEVELS VOZ ACTS UNITS VCC PARAMETER 4.50 V VIH 4.50 V VS 2.25 V VT 2.25 V VW 3.60 V GND 0.00 V Three-State Low Timing Diagram and Load Circuit VCC VIH VS RL INPUT DUT VSS CL TPZL TEST POINT CL = 50pF RL = 500Ω TPLZ VOZ VT OUTPUT THREE-STATE LOW VOLTAGE LEVELS VW 8 UNITS VCC 1 4.50 V VIH 4.50 V VOL VS 2.25 V VT 2.25 V VW 0.90 V GND 0.00 V Spec Number 309 518838 HCS241MS Die Characteristics DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness:13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout (19) BE (20) VCC (1) AE (2) AI1 (3)BO4 HCS241MS (18) AO1 AI2 (4) (17) BI4 BO3 (5) (16) AO2 AI3 (6) (15) BI3 BO2 (7) BI2 (13) AO4 (12) BI1 (11) GND (10) BO1 (9) AI4 (8) (14) AO3 Spec Number 310 518838