HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme ruggedness under severe operating conditions. .112x45° E FULL R C B E B E FEATURES: • PG = 13 Typ. min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System MAXIMUM RATINGS 36 V VCEO 18 V 4.0 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.6 °C/W K MAXIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K VEBO ORDER CODE: ASI10599 TC = 25 °C NONETEST CONDITIONS SYMBOL F MINIMUM L CHARACTERISTICS G DIM E VCBO D I J B 20 A Ø.125 NOM. C H IC L A MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V IC = 5.0 A 10 f = 1.0 MHz 400 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 20 mA 200 --pF REV. B 1/2 ERROR! REFERENCE SOURCEHF100-12 NOT FOUND. GP IMD3 VCE = 12.5 V VCE = 12.5 V ICQ = 150 mA ICQ = 150 mA f = 30 MHz POUT = 100 W 11 13 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. -30 dB dBc REV. B 2/2