ASI ULBM45_07

ULBM45
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM45 is a gold metallized
RF power transistor designed for 12.5
V class-C UHF communication
applications. The device utilizes
emitter ballasting to achieve high
reliability and ruggedness.
PACKAGE STYLE .500 6L FLG
A
C
1
3
2x Ø N
FU LL R
D
2
FEATURES:
B
• Internal Input Matching Network
• PG = 5.0 dB at 45 W/470 MHz
• Omnigold™ Metalization System
• Common Emitter, 12.5 V operation
10.0 A
VCEO
VCES
M
K
H
J
36 V
16 V
L
M IN IM U M
M AXIM U M
inches / mm
inches / mm
A
.150 / 3.43
.160 / 4.06
.045 / 1.14
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
H
36 V
I
D IM
B
VCBO
E
.725/18,42
F
G
MAXIMUM RATINGS
IC
4
.725 / 18.42
I
4.0 V
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
PDISS
175 W @ TC = 25°C
L
.150 / 3.81
TJ
-65 °C to +200 °C
N
TSTG
-65 °C to +150 °C
θJC
1.0 °C/W
VEBO
CHARACTERISTICS
.120 / 3.05
1 = COLLECTOR
.135 / 3.43
2 = BASE
3&4 = EMITTER
ORDER CODE: ASI10685
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.170 / 4.32
.285 / 7.24
M
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
16
V
BVCES
IC = 20 mA
36
V
BVCBO
IC = 5.0 mA
36
BVEBO
IE = 5.0 mA
4.0
ICBO
VCB = 15 V
V
5.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
REV. C
1/2
ERROR! REFERENCE SOURCE ULBM45
NOT FOUND.
CHARACTERISTICS
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
ICES
VCE = 22 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
PG
ηC
VCE = 12.5 V
MINIMUM TYPICAL MAXIMUM
IC = 1.0 A
20
f = 1.0 MHz
POUT = 45 W
f = 470 MHz
UNITS
5.0
mA
200
---
130
pF
60
dB
%
5.0
IMPEDANCE DATA
FREQ MHz
ZIN (Ω
Ω)
ZCL (Ω
Ω)
170
512
1.5 – j3.8
0.75 – j1.3
1.4 – j2.4
0.6 – j0.8
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2