ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FU LL R D 2 FEATURES: B • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold™ Metalization System • Common Emitter, 12.5 V operation 10.0 A VCEO VCES M K H J 36 V 16 V L M IN IM U M M AXIM U M inches / mm inches / mm A .150 / 3.43 .160 / 4.06 .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H 36 V I D IM B VCBO E .725/18,42 F G MAXIMUM RATINGS IC 4 .725 / 18.42 I 4.0 V J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 PDISS 175 W @ TC = 25°C L .150 / 3.81 TJ -65 °C to +200 °C N TSTG -65 °C to +150 °C θJC 1.0 °C/W VEBO CHARACTERISTICS .120 / 3.05 1 = COLLECTOR .135 / 3.43 2 = BASE 3&4 = EMITTER ORDER CODE: ASI10685 TC = 25 °C NONETEST CONDITIONS SYMBOL .170 / 4.32 .285 / 7.24 M MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 20 mA 36 V BVCBO IC = 5.0 mA 36 BVEBO IE = 5.0 mA 4.0 ICBO VCB = 15 V V 5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA REV. C 1/2 ERROR! REFERENCE SOURCE ULBM45 NOT FOUND. CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL ICES VCE = 22 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG ηC VCE = 12.5 V MINIMUM TYPICAL MAXIMUM IC = 1.0 A 20 f = 1.0 MHz POUT = 45 W f = 470 MHz UNITS 5.0 mA 200 --- 130 pF 60 dB % 5.0 IMPEDANCE DATA FREQ MHz ZIN (Ω Ω) ZCL (Ω Ω) 170 512 1.5 – j3.8 0.75 – j1.3 1.4 – j2.4 0.6 – j0.8 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2