VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System • Emitter Ballast resistors A E E ØC B D H I J G #8-32 UNC-2A MAXIMUM RATINGS F E IC 5.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 60 W TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.9 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10727 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVCBO IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 30 V 10 mA ICBO VCB = 30 V 1.0 mA hFE VCE = 5.0 V 200 --- Cob VCB = 30 V 65 pF IC = 500 mA 5.0 f = 1.0 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 VHB40-28S ERROR! REFERENCE SOURCE NOT FOUND. PG ηC POUT VCE = 28 V PIN = 7.0 W 7.6 f = 175 MHz 60 40 .112x45° dB % W A C B E E ØC B D H I J G #8-32 UNC-2A F E DIM MINIMUM MAXIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 J .750 / 19.05 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2