VS-HFA04TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified 2 D2PAK 1 N/C 3 Anode BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION PRODUCT SUMMARY VR 600 V VF at 4 A at 25 °C 1.8 V IF(AV) 4A trr (typical) 17 ns TJ (maximum) 150 °C Qrr at 125 °C 40 nC dI(rec)M/dt at 125 °C 280 A/μs VS-HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 4 Single pulse forward current IFSM 25 Maximum repetitive forward current IFRM 16 Maximum power dissipation PD Operating junction and storage temperature range Document Number: 94036 Revision: 19-Feb-10 TC = 25 °C 25 TC = 100 °C 10 TJ, TStg For technical questions, contact: [email protected] - 55 to + 150 A W °C www.vishay.com 1 VS-HFA04TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 4.0 A Maximum forward voltage VFM IF = 8.0 A See fig. 1 IF = 4.0 A, TJ = 125 °C VR = VR rated MIN. TYP. MAX. 600 - - - 1.5 1.8 - 1.8 2.2 - 1.4 1.7 UNITS V - 0.17 3.0 - 44 300 See fig. 3 - 4.0 8.0 pF Measured lead to lead 5 mm from package body - 8.0 - nH MIN. TYP. MAX. UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 - trr1 TJ = 25 °C - 28 42 ns trr2 TJ = 125 °C - 38 57 IRRM1 TJ = 25 °C - 2.9 5.2 IRRM2 TJ = 125 °C - 3.7 6.7 Qrr1 TJ = 25 °C - 40 60 Qrr2 TJ = 125 °C - 70 105 dI(rec)M/dt1 TJ = 25 °C - 280 - dI(rec)M/dt2 TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - - 300 °C - - 5.0 - - 80 IF = 4.0 A dIF/dt = 200 A/μs VR = 200 V A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device www.vishay.com 2 Case style D2PAK For technical questions, contact: [email protected] - 2.0 - g - 0.07 - oz. HFA04TB60S Document Number: 94036 Revision: 19-Feb-10 VS-HFA04TB60SPbF 1000 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.1 0 1 2 3 4 5 0 6 VFM - Forward Voltage Drop (V) 94036_01 94036_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 200 300 400 500 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 94036_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal response) 0.01 0.00001 94036_04 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94036 Revision: 19-Feb-10 For technical questions, contact: [email protected] www.vishay.com 3 VS-HFA04TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A 200 50 180 IF = 8 A IF = 4 A 45 160 140 Qrr (nC) trr (ns) 40 35 120 80 60 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 20 100 0 100 1000 dIF/dt (A/μs) 94036_05 1000 dIF/dt (A/μs) 94036_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 IF = 8 A IF = 4 A 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/μs) 10 Irr (A) IF = 8 A IF = 4 A 100 30 25 VR = 200 V TJ = 125 °C TJ = 25 °C 8 6 4 VR = 200 V TJ = 125 °C TJ = 25 °C 2 0 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/μs) 94036_06 1000 dIF/dt (A/μs) 94036_08 Fig. 6 - Typical Recovery Current vs. dIF/dt www.vishay.com 4 100 100 Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: [email protected] Document Number: 94036 Revision: 19-Feb-10 VS-HFA04TB60SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94036 Revision: 19-Feb-10 For technical questions, contact: [email protected] www.vishay.com 5 VS-HFA04TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A ORDERING INFORMATION TABLE Device code VS- HF A 04 TB 60 S 1 2 3 4 5 6 7 TRL PbF 8 1 - HPP product suffix 2 - HEXFRED® family 3 - Process designator: A = Electron irradiated 4 - Current rating (04 = 4 A) 5 - Package outline (TB = TO-220, 2 leads) 6 - Voltage rating (60 = 600 V) 7 - S = D2PAK 8 - 9 None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94036 Revision: 19-Feb-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1