Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF (typ.)* = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4 2 1 CATHODE Benefits IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A trr (typ.) = 28ns 3 di(rec) M /dt (typ.)*= 85A /µs ANODE 2 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count TO-247AC (Modified) Description International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Units 1200 8.0 130 32 73.5 29 - 55 to 150 V A W °C * 125°C 1 HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VBR Parameter Min Typ Max Units Test Conditions Cathode Anode Breakdown 1200 - - V IR = 100µA - 2.6 3.3 V IF = 8.0A Voltage VFM Max. Forward Voltage - 3.4 4.3 IF = 16A - 2.4 3.1 IF = 8.0A, TJ = 125°C Max. Reverse Leakage - 0.31 10 Current - 135 1000 CT Junction Capacitance - 11 20 pF VR = 200V LS Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body IRM µA See Fig. 1 VR = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x VR RatedD R See Fig. 3 Rated Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr Min Typ Max Units - 28 - - 63 95 TJ = 25°C IF = 8.0A - 106 160 TJ = 125°C VR = 200V - 4.5 8.0 TJ = 25°C di f /dt = 200A/µs - 6.2 11 - 140 380 - 335 880 di(rec)M /dt1 Peak Rate of Recovery - 133 - di(rec)M /dt2 Current During tb - 85 - trr1 Reverse Recovery Time See Fig. 5, 10 trr2 IRRM1 IRRM2 Qrr1 Qrr2 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 See Fig. 8 ns Test Conditions A IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 125°C nC TJ = 25°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Min Typ Max Units - - 300 °C k/W Tlead ! Lead Temperature RthJC Thermal Resistance, Junction to Case - - 1.7 RthJA " Thermal Resistance, Junction to Ambient - - 40 RthCS$ Thermal Resistance, Case to Heat Sink - 0.25 - Wt Weight - 6.0 - Mounting Torque g - 0.21 - (oz) 6.0 - 12 Kg-cm 5.0 - 10 lbf•in ! 0.063 in. from Case (1.6mm) for 10 sec "#Typical Socket Mount $ Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 1000 T = 150˚C J 125˚C 100 100˚C 10 1 0.1 25˚C 0.01 0 300 600 900 1200 Reverse Voltage - VR (V) Fig. 2 - Typ. Values Of Reverse Current Vs. Reverse Voltage 10 100 Junction Capacitance - CT (pF) Instantaneous Forward Current - I F (A) Reverse Current - I R (µA) 100 T = 150˚C J T = 125˚C J T = 25˚C J 1 0 2 4 6 8 T = 25˚C J 10 1 10 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (Seconds) 0.1 1 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 HFA08PB120 Bulletin PD-2.365 rev. B 11/00 20 160 V R= 160V T J = 125˚C T J = 25˚C IF = 8 A IF = 4 A 140 16 IF = 8 A IF = 4 A 12 100 Irr ( A) trr ( ns ) 120 80 8 60 4 40 VR = 160V TJ = 125˚C TJ = 25˚C 20 100 0 100 1000 1000 di F /dt (A/µs ) di F /dt (A/µs ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt Fig. 6 - Typical Recovery Current Vs. dif /dt 1200 1000 VR = 160V TJ = 125˚C TJ = 25˚C 1000 di(REC) M/dt (A/µs ) IF = 8 A IF = 4 A 800 Qrr ( nC ) IF = 8 A IF = 4 A 600 400 100 200 VR = 160V TJ = 125˚C TJ = 25˚C 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. dif /dt 4 10 100 1000 di F /dt (A/µs ) Fig. 7 - Typical di(REC) M/dt vs. dif /dt www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 t rr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 di diFf /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Outline Table Conforms to JEDEC Outline TO-247AC Dimensions in millimeters and (inches) Ordering Information Table Device Code HF A 08 1 2 3 1 - Hexfred Family 2 - Process Designator PB 120 4 5 A = Electron Irradiated B = Platinum Diffused 3 - Current Rating 4 - Package Outline (PB = TO-247, 2 pins) 5 - Voltage Rating (120 = 1200V) WORLD HEADQUA EUROPEAN HEADQUA IR CA IR GER IR IR FAR IR SOUTHEAST IR T (08 = 8A) http 6 www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 7