VS-HFA30PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • • • • • Base common cathode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 2 DESCRIPTION 1 Cathode 3 Anode TO-247AC modified PRODUCT SUMMARY Package TO-247AC modified (2 pins) IF(AV) 30 A VR 1200 V VF at IF 4.1 V trr (typ.) 47 ns TJ max. 150 °C Diode variation Single die VS-HFA30PB120PbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 30 A continuous current, the VS-HFA30PB120PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30PB120PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range Document Number: 94069 Revision: 23-May-11 TEST CONDITIONS VR PD TJ, TStg TC = 100 °C VALUES UNITS 1200 V 30 120 A 90 TC = 25 °C 350 TC = 100 °C 140 - 55 to + 150 W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 30 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 30 A Maximum forward voltage VFM IF = 60 A See fig. 1 IF = 30 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V LS Measured lead to lead 5 mm from package body Series inductance TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. UNITS 1200 - - - 2.4 4.1 - 3.1 5.7 - 2.3 4.0 - 1.3 40 - 1.1 4000 - 50 75 pF - 8.0 - nH UNITS V μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 47 - trr1 TJ = 25 °C - 110 170 trr2 TJ = 125 °C - 170 260 - 10 15 - 16 24 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 dI(rec)M/dt2 IF = 30 A dIF/dt = 200 A/μs VR = 200 V ns A - 650 980 - 1540 2310 TJ = 25 °C - 270 - TJ = 125 °C - 240 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.36 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified (JEDEC) °C/W g HFA30PB120 For technical questions within your region, please contact one of the following: Document Number: 94069 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120PbF 100 10 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 30 A TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C TJ = 150 °C TJ = 25 °C 1 1 2 3 4 5 6 7 0.1 200 8 VF - Forward Voltage Drop (V) 93090_01 TJ = 125 °C 1 400 600 800 1000 1200 VR - Reverse Voltage (V) 93090_02 Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 100 10 1 1000 VR - Reverse Voltage (V) 93090_03 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 1 0.1 R1 τJ 0.01 Single pulse (thermal response) 0.001 0.000001 93090_04 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 τ1 R2 τ2 R3 τ3 Ci = τi/Ri τC τi (s) Ri (°C/W) 0.234 0.000100 0.069 0.000434 0.056 0.002202 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94069 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 30 A 300 275 250 3000 VR = 390 V TJ = 125 °C TJ = 25 °C IF = 60 A IF = 30 A IF = 15 A 225 2500 2000 Qrr (nC) 200 trr (ns) IF = 60 A IF = 30 A IF = 15 A 175 150 125 1500 1000 100 75 VR = 390 V TJ = 125 °C TJ = 25 °C 500 50 25 0 100 150 200 250 300 350 400 450 dIF/dt (A/µs) 93090_05 0 100 500 93090_07 900 800 30 700 dI(rec)M/dt (A/µs) IRRM (A) 20 15 10 0 100 93090_06 150 200 250 300 350 400 450 IF = 15 A 600 500 400 IF = 30 A 300 IF = 60 A 100 500 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 VR = 390 V TJ = 125 °C TJ = 25 °C 200 VR = 390 V TJ = 125 °C TJ = 25 °C 5 500 Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 35 IF = 60 A IF = 30 A IF = 15 A 400 dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 25 300 200 0 100 93090_08 150 200 250 300 350 400 450 500 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt(Per Leg) For technical questions within your region, please contact one of the following: Document Number: 94069 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120PbF HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 30 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions L = 100 µH High-speed switch D.U.T. Rg = 25 Ω Current monitor IL(PK) Freewheel diode + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms Document Number: 94069 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 30 A ORDERING INFORMATION TABLE Device code VS- HF A 30 PB 1 2 3 4 5 120 PbF 6 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (30 = 30 A) 5 - PB = TO-247AC modified 6 - Voltage rating: (120 = 1200 V) 7 - PbF = Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95253 Part marking information www.vishay.com/doc?95255 SPICE model www.vishay.com/doc?95358 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94069 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1