DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs (Vertical Cavity SurfaceEmitting Lasers) designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for the VCSEL. These combined features simplify design for high data rate communication and eye safety. TO-46 tilt window metal can component, prealigned into LC Sleeve The device is designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. Designed for drive currents between 3-15mA average It is designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors. FEATURES: 850nm multi-mode oxide isolated VCSEL Packaged with a back monitor Attenuated window can The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases driver design. VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. This LC TOSA product is pre-aligned and focused fiber optic transmitters designed to interface with 50/125 and 62.5/125µm multi-mode fiber. Part Number Description HFE4192-581 LC TOSA with attenuated optics, monitor photodiode, normal polarity HFE4192-582 LC TOSA with attenuated optics, monitor photodiode, reverse polarity HFE4192-58X 4.25GBPS 850NM VCSEL ABSOLUTE MAXIMUM RATINGS INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT 30mW at 820-860 nm PER IEC/EN 60825-1/A2.2001 AND 21 CFR 1040.10 AND 1040.11 EXCEPT FOR DEVIATIONS PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001 SEMICONDUCTOR LASER Advanced Optical Components 600 Millennium Drive, Allen, TX 75013 LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT PN55449 AVOID EXPOSURE: Invisible LASER radiation is emitted from this aperture. Parameter Rating Storage temperature -40oC to +85oC Operating temperature -40oC to +85oC See note 1 (page 3) Lead solder temperature 260oC, 10 seconds Laser continuous average current 12mA Laser peak forward current with pulse width less than 1µs 18mA Laser reverse voltage 5V Photodiode reverse voltage 5V Photodiode reverse current 2mA NOTICE: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. HFE4192-58X ELECTRICAL-OPTICAL CHARACTERISTICS VCSEL Parameters Test Condition Average Fiber Coupled Power Minimum coupling efficiency including wiggle Threshold Current Threshold Current maximum deviation from 25oC value I F = 7mA I F = 7mA Temperature at minimum threshold current Slope Efficiency Slope Efficiency Temperature variation Peak Wavelength o o T A = 0 C to 70 C T A = 25oC to 85 oC T A = -40oC to 25 oC T A = 25oC T A = -40oC T A = 85oC T A = -40oC to 85 oC Photodiode Parameters Test Condition Relative Intensity Noise Series Resistance Monitor Current Mon. Current Temp. Variation Monitor Current Tracking Dark Current PD Capacitance Typ. Max. Units Notes mW % 2 2 2 1 1.7 1.5 10 mA mA mA mA o C 3 3 3 3 0.09 0.13 mW/mA mW/mA mW/mA ppm/oC 0.4 55 Series Resistance Temperature Coefficient Spectral Bandwidth, RMS Laser Forward Voltage Laser Resonance Frequency Minimum Bias Relative to I th Rise and Fall Ti mes Min. P OC I F = 7mA, T A = -40oC to 85oC I F = 7mA, T A = -40oC to 85 oC I F = 7mA I F = 7mA I F /I TH = 4 T A = -40oC to 85 oC Pavg = 0.400mW, Extinction Ratio = 10 1 GHz BW, I F = 7mA I F = 7mA , T A = 25oC T A = -40oC T A = 85oC I F = 7mA, T A = -40oC to 85 oC λ P Temperature Variation Symbol I TH ∆I TH ∆I TH ∆I TH TO 0.5 -0.5 η η η ∆η/∆T 0.05 λP -30 -6000 830 Po = 0.4mW, T A = 25 C Po = 0.4mW, T A = -40oC Po = 0.4mW, T A = +85oC Po = 0.4mW, -40oC to85oC Po = 0mW, V R = 3V V R = 0V, Freq = 1MHz V R = 3V, Freq = 1MHz 850 860 1.8 0.65 2.0 5 -130 35 5 nm nm V GHz 4 25 4 nm/oC 0.06 90 90 -122 50 60 20 -3000 ∆R s/∆T o 0.07 0.035 ∆λ P/∆T ∆λ VF ROF r tr tf RIN RS RS RS 1.5 ps 10 10 6 dB/Hz Ω Ω Ω ppm/oC 7 Symbol Min. Typ. Max. Units Notes I PD I PD I PD ∆I PD /∆T Deltrk ID C 0.225 0.2 0.2 -0.1 .8 0.4 0.4 0.4 0 1 0.6 0.65 0.65 0.1 1.2 20 100 55 mA 8 8 8 8 8,9 ELECTRO-OPTICAL CHARACTERISTICS (TA=25 oC unless otherwise stated) 75 40 mA %/ oC nA pF HFE4192-58X 4.25GBPS 850NM VCSEL NOTES 1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. 2. For the purpose of these tests, IF is DC current. 3. Threshold current varies as (TA – TO)2. It may either increase or decrease with temperature, depending upon relationship of TA to TO. The magnitude of the change is proportional to the threshold at TO. 4. Slope efficiency is defined as ∆PO/∆IF. 5. To compute the value of Slope Efficiency at a temperature T, use the following equation: η(T) ≈ η(25oC)*[1+(∆η/∆T)*(T-25)] 6. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure <80ps fall time. 7 To compute the value of Series Resistance at a temperature T, use the following equation: 8. These specifications are for the TOSA component alone. Reflections introduced by any subsequent higher level assembly may affect these values. 9. Monitor current tracking is defined as follows: Deltrk = IPD(PO = 0.75mW) / 0.75mW IPD(PO = 0.45mW) / 0.45mW 10. Relaxation Oscillation Frequency (ROF) is determined by the relationship: ROF = 1 2π ⋅ r −1 tc ⋅ τ2 − r t2 Where r= IF/ITH, tc is the photon lifetime (2.5ps), and τ2 is the spontaneous emission lifetime (1ns). Both tc and τ2 are functions of temperature. When operating at high temperature, the r (IF/ITH) value can be significantly reduced and still maintain adequate speed performance. This is recommended in order to preserve reliability. RS(T) ≈ RS(25oC)*[1+∆RS/∆T)*(T-25)] TYPICAL PERFORMANCE CURVES Pmax Emitted Power η Typical operating current / power I th Current Threshold Current vs. Temperature: Threshold current varies parabolically with temperature; thus it can be nearly constant for a limited temperature range. Threshold Current Emitted Power vs. Current: Power varies approximately linearly with current above threshold. I TH -4 2 IMIN [1.1×10 (T-TMIN ) +1] TMIN , I MIN Temperature HFE4192-58X MOUNTING DIMENSIONS MOUNTING DIMENSIONS (for reference only): All dimensions are in inches. PINOUT Number HFE4192-581 HFE4192-582 1 VCSEL Cathode VCSEL Anode 2 VCSEL Anode VCSEL Cathode 3 Monitor Diode Cathode Monitor Diode Cathode 4 Monitor Diode Anode (Case) Monitor Diode Anode (Case) HFE4192-58X 4.25GBPS 850NM VCSEL ADVANCED OPTICAL COMPONENTS AOC CAPABILITIES Finisar’s ADVANCED OPTICAL COMPONENTS division was formed through strategic acquisition of key optical component suppliers. The company has led the industry in high volume Vertical Cavity Surface Emitting Laser (VCSEL) and associated detector technology since 1996. VCSELs have become the primary laser source for optical data communication, and are rapidly expanding into a wide variety of sensor applications. VCSELs’ superior reliability, low drive current, high coupled power, narrow and circularly symmetric beam and versatile packaging options (including arrays) are enabling solutions not possible with other optical technologies. ADVANCED OPTICAL COMPONENTS is also a key supplier of Fabrey-Perot (FP) and Distributed Feedback (DFB) Lasers, and Optical Isolators (OI) for use in single mode fiber data and telecommunications networks ADVANCED OPTICAL COMPONENTS’ advanced capabilities include: 1, 2, 4, 8, and 10Gbps serial VCSEL solutions 1, 2, 4, 8, and 10Gbps serial SW DETECTOR solutions VCSEL and detector arrays 1, 2, 4, 8, and 10Gbps FP and DFB solutions at 1310 and 1550nm 1, 2, 4, 8, and 10Gbps serial LW DETECTOR solutions Optical Isolators from 1260 to 1600nm range Laser packaging in TO46, TO56, and Optical subassemblies with SC, LC, and MU interfaces for communication networks VCSELs operating at 670nm, 780nm, 980nm, and 1310nm in development LOCATION Allen, TX - Business unit headquarters, VCSEL wafer growth, wafer fabrication and TO package assembly. Fremont, CA – Wafer growth and fabrication of 1310 to 1550nm FP and DFB lasers. Sensor packages include surface mount, various plastics, chip on board, chipscale packages, etc. Custom packaging options Shanghai, PRC – Optical passives assembly, including optical isolators and splitters. SALES AND SERVICE Finisar’s ADVANCED OPTICAL COMPONENTS division serves its customers through a worldwide network of sales offices and distributors. For application assistance, current specifications, pricing or name of the nearest Authorized Distributor, contact a nearby sales office or call the number listed below. Phone:1-866-MY-VCSEL USA (toll free) 1-214-509-2700 USA (Direct dial) 44 (0) 174 336 5533 Europe 886-935-409898 China & Taiwan 81-90-4437-1130 Japan 82-11-220-6153 Asia Pacific & Korea Fax: 1-214-509-3709 USA Email: [email protected] WEB: www.finisar.com/aoc.php ©2007 Finisar Corporation. All rights reserved. Finisar is a registered trademark of Finisar Corporation. Features and specifications are subject to change without notice. 6/07 Rev. B