UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS(ON) =12.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-92 SOT-223 The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-251 TO-252 1 TO-126 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N65L-AA3-R 1N65G-AA3-R 1N65L-T92-B 1N65G-T92-B 1N65L-T92-K 1N65G-T92-K 1N65L-T92- R 1N65G-T92- R 1N65L-TA3-T 1N65G-TA3-T 1N65L-TF3-T 1N65G-TF3-T 1N65L-TM3-T 1N65G-TM3-T 1N65L-TN3-R 1N65G-TN3-R 1N65L-TN3-T 1N65G-TN3-T 1N65L-T60-K 1N65G-T60-K Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package SOT-223 TO-92 TO-92 TO-92 TO-220 TO-220F TO-251 TO-252 TO-252 TO-126 1 G G G G G G G G G G Pin Assignment 2 D D D D D D D D D D 3 S S S S S S S S S S Packing Tape Reel Tape Box Bulk Tape Reel Tube Tube Tube Tape Reel Tube Bulk 1 of 6 QW-R502-579.B 1N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) SOT-223 TO-251/ TO-252 TO-220 Power Dissipation TO-220F TO-92(TA=25℃) RATINGS UNIT 650 V ±30 V 1.2 A 1.2 A 4.8 A 50 mJ 4.0 mJ 4.5 V/ns 1 W 28 W 40 W PD 21 W 1 W TO-126 12.5 W Junction Temperature TJ +150 ℃ ℃ Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt THERMAL DATA PARAMETER SOT-223 TO-251/ TO-252 TO-220/ TO-220F Junction to Ambient Junction to Case SYMBOL TO-92 TO-126 SOT-223 TO-251/ TO-252 TO-220 TO-220F TO-126 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJc RATINGS 150 110 62.5 140 132 14 4.53 3.13 5.95 10 UNIT ℃/W ℃/W 2 of 6 QW-R502-579.B 1N65 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS=0V, ID=250μA VDS=650V, VGS=0V VGS=30V, VDS=0V IGSS VGS=-30V, VDS=0V △BVDSS/△TJ ID=250μA Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=1.2A (Note 2,3) Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS=1.2A dIF/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature Gate-Source Leakage Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 V 10 μA 100 nA -100 nA 0.4 V/℃ 2.0 4.0 9.5 12.5 V Ω 120 150 20 25 3.0 4.0 pF pF pF 5 25 7 25 5.0 1.0 2.6 20 60 25 60 6.0 ns ns ns ns nC nC nC 1.4 V 1.2 A 4.8 A 160 0.3 ns μC 3 of 6 QW-R502-579.B 1N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-579.B 1N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circui Unclamped Inductive Switching Waveformst UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-579.B 1N65 Drain Current,ID (µA) Drain Current, ID (A) Drain Current,ID (mA) TYPICAL CHARACTERISTICS Drain Current,ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-579.B