HM62832UH Series 256 k High Speed SRAM (32-kword × 8-bit) Features • High speed: Fast access time 15/20 ns (max) • Low Power Standby: 15 µW (typ) (L-version) Operation: 675/600 mW (typ) • Single 5 V supply • Completely static memory No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly TTL compatible: All inputs and outputs Ordering Information Type No. Access Time Package HM62832UHP-15 HM62832UHP-20 15 ns 20 ns 300-mil 28-pin plastic DIP (DP-28NA) HM62832UHLP-15 HM62832UHLP-20 15 ns 20 ns HM62832UHJP-15 HM62832UHJP-20 15 ns 20 n HM62832UHLJP-15 HM62832UHLJP-20 15 ns 20 ns 300-mil 28-pin plastic SOJ (CP-28DN) HM62832UH Series Pin Arrangement A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 (Top view) Pin Description Pin name Function A0 – A14 Address I/O0 – I/O7 Input/output CS Chip select WE Write enable OE Output enable VCC Power supply VSS Ground 2 VCC WE A13 A8 A9 A11 OE A10 CS I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 HM62832UH Series Block Diagram A8 VCC A13 V SS A14 A12 X-Address A7 Memory Array Row 512 × 512 Decoder Buffers A6 A5 A4 A3 I/O0 • • • Column I/O I/O Buffer I/O7 Column Decoder WE Column Address Buffer OE A10 A0 A1 A2 A9 A11 CS Function Table CS OE WE Mode VCC Current I/O Pin H X X Standby I SB , I SB1 High-Z L L H Read I CC Dout Read cycle 1, 2, 3 L H L Write I CC Din Write cycle 1 L L L Write I CC Din Write cycle 2 Ref. Cycle Note: X : H or L 3 HM62832UH Series Absolute Maximum Ratings Parameter Supply voltage Symbol *1 Value VCC Voltage on any pin relative to V SS *1 Unit *2 V *2 –0.5 to +7.0 VT –0.5 to V CC + 0.5 V Power dissipation PT 1.0 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +125 °C Storage temperature under bias Tbias –10 to +85 °C Notes: 1. With respect to V SS 2. VCC and VT min = –2.5 V for pulse width ≤ 10 ns Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Symbol Min Typ Max Unit Supply voltage VCC 4.5 5.0 5.5 V VSS 0 0 0 V VIH 2.2 — VCC + 0.5 V — 0.8 V Input high (logic 1) voltage Input low (logic 0) voltage Note: 4 VIL –0.5 1. VIL min = –2.0 V for pulse width ≤ 10 ns *1 HM62832UH Series DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V) Parameter Symbol Min Typ*1 Max Unit Test Conditions Input leakage current |ILI| — — 2.0 µA VCC = 5.5 V Vin = VSS to V CC Output leakage current |ILO | — — 2.0 µA CS = VIH VI/O = VSS to V CC Operating VCC current I CC1 (-15)*3 — 135 170 mA min cycle*2 I CC2 (-15) — 100 120 mA 2x min cycle I CC1 (-20) — 120 150 mA min cycle I CC2 (-20) — 90 110 mA 2x min cycle I SB (-15) — 40 60 mA CS = VIH, min cycle I SB (-20) — 30 50 0.02 2.0 mA CS ≥ V CC – 0.2 V 0 V ≤ Vin ≤ 0.2 V or VCC – 0.2 V ≤ Vin — 0.003 0.1 Standby V CC current Standby V CC current (1) I SB1 (L-version) — Output low voltage VOL — — 0.4 V I OL = 8 mA Output high voltage VOH 2.4 — — V I OH = –4.0 mA Notes: 1. Typical values are at VCC = 5.0 V, Ta = 25°C and not guaranteed. 2. CS = VIL, Iout = 0 mA 3. Access time version Capacitance (Ta = 25°C, f = 1.0 MHz)*1 Parameter Symbol Min Typ Max Unit Test Conditions Input capacitance Cin — — 6 pF Vin = 0 V Output capacitance Cout — — 10 pF VI/O = 0 V Note: 1. This parameter is sampled and not 100% tested. 5 HM62832UH Series AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, unless otherwise noted.) Test Conditions • • • • Input pulse levels: VSS to 3.0 V Input rise and fall time: 4 ns Input and Output timing reference levels: 1.5 V Output load: See figures +5 V +5 V 480Ω 480Ω Dout 255 Ω Dout 30 pF*1 5 pF*1 255Ω Output load (A) Note: 1. Including scope and jig Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ and tOW) Read Cycle HM62832UH-15 HM62832UH-20 Parameter Symbol Min Max Min Max Unit Read cycle time t RC 15 — 20 — ns Address access time t AA — 15 — 20 ns Chip select access time t ACS — 15 — 20 ns 3 — 3 — ns *1 Chip selection to output in low-Z t CLZ Output enable to output valid t OE Output enable to output in low-Z Chip deselection to output in high-Z — 8 — 10 ns *1 0 — 0 — ns *1 CHZ 0 7 0 10 ns *1 0 7 0 10 ns 3 — 3 — ns t OLZ t Chip disable to output in high-Z t OHZ Output hold from address change t OH Note: 6 1. Transition is measured ±200 mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. HM62832UH Series Read Timing Waveform (1)*1 (WE = VIH) t RC Address t AA OE t OE t OH t OLZ CS t OHZ t ACS t CHZ t CLZ Dout Valid Data Note: 1. Transition is measured ±200 mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. Read Timing Waveform (2) *1 (WE = VIH, CS = VIL , OE = VIL ) t RC Address t AA t OH t OH Dout Valid Data Note: 1. Transition is measured ±200 mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. 7 HM62832UH Series Read Timing Waveform (3) *1, *2 (WE = VIH, OE = VIL ) t RC CS t ACS t CHZ t CLZ Dout Valid Data Notes: 1. Transition is measured ±200 mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. 2.Address valid prior to or coincident with CS transition low. Write Cycle HM62832UH-15 HM62832UH-20 Parameter Symbol Min Max Min Max Unit Write cycle time t WC 15 — 20 — ns Chip selection to end of write t CW 10 — 12 — ns Address valid to end of write t AW 13 — 15 — ns Address setup time t AS 0 — 0 — ns t WP 10 — 12 — ns t WR 0 — 0 — ns t OHZ 0 7 0 10 ns t WHZ 0 7 0 10 ns t DW 8 — 10 — ns t DH 0 — 0 — ns t OW 3 — 3 — ns t OH 3 — 3 — ns Write pulse width *2 Write recovery time *3 Output disable to output in high-Z Write to output in high-Z *1, 4 *1, 4 Data to write time overlap *6 Data hold from write time Output active from end of write *1, 6 Output hold from address change *5 Notes: 1. Transition is measured ±200 mV from high impedance voltage with Load (B). This parameter is sampled and not 100% tested. 2. A write occurs during the overlap (tWP) to a low CS and a low WE. 3. t WR is measured from the earlied or CS or WE going high to the end of write cycle. 4. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. 5. Dout is the same phase of write data of this write cycle. 6. If CS is low during this priod, I/O pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 8 HM62832UH Series Write Timing Waveform (1) t WC Address OE t CW *1 CS t AW t AS t WP t WR WE t OHZ Dout t DW Din t DH Valid Data Note: 1. If the CS low transition occurs simultaneously with the WE low transition or after the opposite phase to the outputs must not be applied. 9 HM62832UH Series Write Timing Waveform (2) (OE low Fixed)*4 t WC Address t CW *1 CS t WR t AW t AS t WP WE t OH t WHZ t OW *2 *3 Dout t DW Din t DH Valid Data Notes: 1. If the CS low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 2.Dout is the same phase of write data of this write cycle. 3.Dout is the read data of next address. 4.WE must be high during all address transition except when device is disable with CS. 10 HM62832UH Series Low VCC Data Retention Characteristics (Ta = 0 to +70°C) This characteristics is guaranteed only for L-version. Parameter Symbol Min Typ Max Unit Test Conditions VCC for data retention VDR 2 — — V CS ≥ V CC – 0.2V, Vin ≥ V CC – 0.2 V or 0 V < Vin ≤ 0.2 V Data retention current I CCDR — 2 50*1 µA Chip deselect to data retention time t CDR 0 — — ns Operation recovery time 5 — — ms Note: tR 1. VCC = 3.0 V Low V CC Data Retention Timing Waveform Data retention mode V CC 4.5 V tR t CDR 2.2 V V DR CS 0V CS ≥ VCC – 0.2 V 11 HM62832UH Series Package Dimensions HM62832UHP/UHLP Series (DP-28NA) Unit: mm 36.00 37.32 Max 1 7.37 Max 15 7.10 28 14 1.3 5.08 Max 2.20 Max 2.54 Min 0.51 Min 0.48 ± 0.10 2.54 ± 0.25 7.62 + 0.11 0.25 – 0.05 0° – 15° HM62832UHJP/UHLJP Series (CP-28DN) Unit: mm 18.17 18.54 Max 0.43 ± 0.10 1.27 0.10 12 0.21 2.40 +– 0.24 +0.25 –0.17 1.30 Max 0.80 7.62 ± 0.13 14 0.74 3.50 ± 0.26 1 8.64 ± 0.13 15 28 0.35 6.76 +– 0.16 HM62832UH Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 13